An apparatus for depositing a thin layer and associated method, the apparatus including a process chamber; a support in the process chamber, substrates being supportable on the support at different heights; a gas injector configured to inject a gas into the process chamber; and a heater configured to heat the process chamber, wherein the gas injector includes a first injector configured to inject a first gas; and a second injector configured to inject a second gas, a flow rate of the first gas injected from the first injector ranges from 120 sccm to 240 sccm, and a flow rate of the second gas injected from the second injector ranges from 1,200 sccm to 2,400 sccm.

The disclosed technology relates generally to semiconductor processing and more particularly to liquid precursor injection apparatus and methods for depositing thin films. A method of injecting a liquid precursor into a thin film deposition chamber comprises delivering a vaporized liquid precursor into the thin film deposition chamber by atomizing the liquid precursor into atomized precursor droplets using a liquid injection unit and vaporizing the atomized precursor droplets into the vaporized liquid precursor in a vaporization chamber. The liquid injector unit and the liquid precursor are such that operating the liquid precursor delivery unit under a lower stability condition, including a first liquid precursor temperature at the liquid injection unit, a first liquid precursor pressure upstream of the liquid precursor injection unit and a first gas pressure downstream of the liquid precursor injection unit, causes a mass flow rate of the liquid precursor to vary by more than 10% relative to an average mass flow rate of the liquid precursor during a first time duration. Delivering the vaporized liquid precursor into the thin film deposition chamber comprises operating the liquid precursor delivery unit under a higher stability condition. The higher stability includes one or more of: a second liquid precursor temperature at the liquid injection unit that is lower than the first liquid temperature; a second liquid pressure upstream of the injection unit that is higher than the first liquid pressure; and a second gas pressure downstream of the liquid injection unit that is higher than the first Gas pressure. The higher stability is such that that the mass flow rate of the liquid precursor varies by less than 10% relative to an average mass flow rate during a second time duration having the same time duration as the first time duration.

Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.

Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

Methods for making nanolaminates using Vapor Deposited methods such as Chemical Vapor Deposition and Physical Vapor Deposition, which can be applied on various surfaces, including glass, the soft polymeric material, or surgical instruments, as well as synthetic, composite, and organic materials. Methods of manufacturing nanolaminates by employing sequential surface reactions, wherein the antimicrobial coatings are provided by employing an Atomic Layer Deposition (ALD) process, thermal spray and or aerosol assisted deposition.

Methods of making hexagonal boron nitride coatings upon stainless steel and other ferrous metal/alloy materials, compositions thereof, and methods of using same, such as in electrothermal membrane distillation systems using hexagonal boron nitride coated metal mesh.

A canister for a semiconductor manufacturing device according to an embodiment of the present disclosure is provided with a sintered filter at the end of a dip tube into which a carrier gas is to be injected, and further provided with a porous container having excellent heat transfer rate inside a container, so that the precursor material filled inside the canister can be smoothly supplied to the thin film deposition device at a rear stage.

A system includes a vaporizer vessel. The vaporizer vessel includes an outlet fluidly connected to the vaporizer vessel. A heater is configured to heat the vaporizer vessel. A valve is configured to regulate a pressure of a vaporized material at the outlet. In response to the pressure at the outlet being outside a set pressure range, the heater is configured to increase or decrease heat to the vaporizer vessel.

A system includes a vaporizer vessel. The vaporizer vessel includes an outlet fluidly connected to the vaporizer vessel. A heater is configured to heat the vaporizer vessel. A valve is configured to regulate a pressure of a vaporized material at the outlet. In response to the pressure at the outlet being outside a set pressure range, the heater is configured to increase or decrease heat to the vaporizer vessel.

Process for manufacturing a nuclear component comprising i) a support containing a substrate based on a metal (1), the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium; the process comprising a step a) of vaporizing a mother solution followed by a step b) of depositing the protective layer (2) onto the support via a process of chemical vapor deposition of an organometallic compound by direct liquid injection (DLI-MOCVD).