A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.

An atomic layer deposition apparatus having a vacuum chamber, a deposition chamber within the vacuum chamber, an inlet channel extending from outside of the vacuum chamber to the deposition chamber such that the inlet channel is connected to the deposition chamber for supplying gases to the deposition chamber, a discharge channel extending from the deposition chamber to outside of the vacuum chamber for discharging gases from the deposition chamber, one or more first precursor supply sources connected to the inlet channel, and one or more second precursor supply sources connected to the inlet channel. The vacuum chamber is arranged between the one or more first precursor supply sources and the one or more second precursor supply sources.

A simple, one-step method for producing a homogenous CeO.sub.2—TiO.sub.2 composite thin film using aerosol-assisted chemical vapor deposition (“CVD”) of a solution containing triacetatocerium (III) and tetra isopropoxytitanium (IV) on a fluorine-doped tin oxide (“FTO”) substrate at a temperature ranging from about 500 to about 650° C. Methods for using the film produced by this method.

A CaTiO.sub.3—TiO.sub.2 composite electrode and method of making is described. The composite electrode comprises a substrate with an average 2-12 μm thick layer of CaTiO.sub.3—TiO.sub.2 composite particles having average diameters of 0.2-2.2 μm. The method of making the composite electrode involves contacting the substrate with an aerosol comprising a solvent, a calcium complex, and a titanium complex. The CaTiO.sub.3—TiO.sub.2 composite electrode is capable of being used in a photoelectrochemical cell for water splitting.

Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The inlet port has a showerhead that the end within the container. The showerhead has at least two angled nozzles to direct the flow of gas within the cavity so that the gas flow is not perpendicular to the surface of a liquid within the ampoule.

Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The inlet port has a showerhead that the end within the container. The showerhead has at least two angled nozzles to direct the flow of gas within the cavity so that the gas flow is not perpendicular to the surface of a liquid within the ampoule.

A mist generating apparatus sprays a surface of an object (P) to be treated with a carrier gas (CGS) of mist (Mst) of a solution containing fine particles or molecules of a material substance, so that a layer of the material substance is deposited on the surface of the object (P) to be treated. The mist generating device includes a mist generator (14) for atomizing the solution to feed the carrier gas (CGS) containing the mist (Mst), and an ultraviolet irradiator (20B) for applying ultraviolet rays having a wavelength of 400 nm or lower to the mist (Mst) floating in the carrier gas (CGS) in a flow path extending from the mist generator (14) until the carrier gas (CGS) is sprayed on the surface of the object (P) to be treated.

Some embodiments relate to precursor delivery systems for producing gas precursors. The precursor delivery system may include one or more precursor supply packages containing a solid precursor material. The one or more precursor supply packages may be configured to heat the solid precursor material to a temperature sufficient to result in thermal decomposition of the solid precursor material. The thermal decomposition of the solid precursor material may produce a gas precursor. The gas precursor may be supplied to a gas precursor-utilizing process. Further embodiments relate to precursor supply packages and related methods.

In order to provide a concentration control apparatus that, without adding any new sensors or the like, makes it possible to accurately estimate a quantity of source consumed inside a vaporization tank, and to perform highly accurate concentration control in accordance with the remaining quantity of source, there is provided a concentration control apparatus that, in a vaporizer that is equipped with at least a vaporization tank containing a liquid or solid source, a carrier gas supply path that supplies a carrier gas to the vaporization tank, and a source gas extraction path along which flows a source gas which is created by vaporizing the source and is then extracted from the vaporization tank, controls a concentration of the source gas and includes a concentration monitor that is provided on the source gas extraction path, and outputs output signals in accordance with a concentration of the source gas.