A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×10.sup.21 cm.sup.−3. Nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1×10.sup.18 cm.sup.−3, and a carbon concentration at the position is equal to or less than 1×10.sup.18 cm.sup.−3.

Provided is a method for producing an oriented electrical steel sheet with an ultra-low iron loss. The method for producing an oriented electrical steel sheet according to the present disclosure is a method for producing an oriented electrical steel sheet comprising the processes of performing reheating, hot rolling, hot-rolled sheet annealing, cold rolling, primary recrystallization annealing and secondary recrystallization annealing on a steel slab, whereby a ceramic coating layer is formed by subjecting a gas-phase ceramic precursor to a contact reaction in a plasma state using the atmospheric pressure plasma CVD (APP-CVD) process, on a part of or the entire one or both surfaces of a steel sheet which has been subjected to the primary recrystallization annealing, and then secondary recrystallization annealing is performed thereon.

Provided is a method for producing an oriented electrical steel sheet with an ultra-low iron loss. The method for producing an oriented electrical steel sheet according to the present disclosure is a method for producing an oriented electrical steel sheet comprising the processes of performing reheating, hot rolling, hot-rolled sheet annealing, cold rolling, primary recrystallization annealing and secondary recrystallization annealing on a steel slab, whereby a ceramic coating layer is formed by subjecting a gas-phase ceramic precursor to a contact reaction in a plasma state using the atmospheric pressure plasma CVD (APP-CVD) process, on a part of or the entire one or both surfaces of a steel sheet which has been subjected to the primary recrystallization annealing, and then secondary recrystallization annealing is performed thereon.

Embodiments of the present disclosure generally relate to substrate support assemblies for retaining a surface of a substrate having one or more devices disposed on the surface without contacting the one or more devices and deforming the substrate, and a system having the same. In one embodiment, the substrate support assembly includes an edge ring coupled to a body of the substrate support assembly. A controller is coupled to actuated mechanisms of a plurality of pixels coupled to the body of the substrate support assembly such that portions of pixels corresponding to a portion of the surface of a substrate to be retained are positioned to support the portion without contacting one or more devices disposed on the surface of the substrate to be retained on the support surface.

Methods for generating one or more atmospheric pressure plasma jets that can be used to deposit various types of conductive traces, coatings, and micro/nano-sized particles/structures on two or three dimensional body surfaces. The method includes generating atmospheric pressure plasma, nebulizing a precursor to generate an aerosol; receiving the aerosol from the nebulizer in a chamber; mixing the atmospheric pressure plasma with the aerosol from the chamber at a nozzle; and printing the plasma-exposed aerosol onto the surface of a substrate.

Methods for generating one or more atmospheric pressure plasma jets that can be used to deposit various types of conductive traces, coatings, and micro/nano-sized particles/structures on two or three dimensional body surfaces. The method includes generating atmospheric pressure plasma, nebulizing a precursor to generate an aerosol; receiving the aerosol from the nebulizer in a chamber; mixing the atmospheric pressure plasma with the aerosol from the chamber at a nozzle; and printing the plasma-exposed aerosol onto the surface of a substrate.

A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×10.sup.21 cm.sup.−3. Nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1×10.sup.18 cm.sup.−3, and a carbon concentration at the position is equal to or less than 1×10.sup.18 cm.sup.−3.

A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×10.sup.21 cm.sup.−3. Nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1×10.sup.18 cm.sup.−3, and a carbon concentration at the position is equal to or less than 1×10.sup.18 cm.sup.−3.

Described herein are cobalt compounds, processes for making cobalt compounds, cobalt compounds used as precursors for depositing cobalt-containing films (e.g., cobalt, cobalt oxide, cobalt nitride, cobalt silicide etc.); and cobalt films. Examples of cobalt precursor compounds are bis(diazadiene)cobalt compounds. Examples of surfaces for deposition of metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, and metal silicates; silicon, silicon oxide and silicon nitride. Alkylated diazadiene ligands are used to form cobalt complexes which are used for selective deposition on certain surfaces and/or superior film properties such as uniformity, continuity, and low resistance.

Described herein are cobalt compounds, processes for making cobalt compounds, cobalt compounds used as precursors for depositing cobalt-containing films (e.g., cobalt, cobalt oxide, cobalt nitride, cobalt silicide etc.); and cobalt films. Examples of cobalt precursor compounds are bis(diazadiene)cobalt compounds. Examples of surfaces for deposition of metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, and metal silicates; silicon, silicon oxide and silicon nitride. Alkylated diazadiene ligands are used to form cobalt complexes which are used for selective deposition on certain surfaces and/or superior film properties such as uniformity, continuity, and low resistance.