A method of depositing a metal includes providing a structure a process chamber, and providing a metal fluoride gas and a growth-suppressant gas into the process chamber to deposit the metal over the structure. The metal may comprise a word line or another conductor of a three-dimensional memory device.

According to one embodiment, a deposition device includes a stage, a deposition head opposed to the stage, and a chamber accommodating the stage and the deposition head. The deposition head comprises a deposition source heating a material and generating vapor, a nozzle connected to the deposition source to emit the vapor generated by the deposition source, a control plate comprising a sleeve surrounding the nozzle, and a movement mechanism moving the control plate along an extension direction of the sleeve.

A catalyst structure includes: (1) a substrate; (2) a catalyst layer on the substrate; and (3) an adhesion layer disposed between the substrate and the catalyst layer. In some implementations, an average thickness of the adhesion layer is about 1 nm or less. In some implementations, a material of the catalyst layer at least partially extends into a region of the adhesion layer. In some implementations, the catalyst layer is characterized by a lattice strain imparted by the adhesion layer.

Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

Methods and devices are provided herein for surfaces for de novo nucleic acid synthesis which provide for low error rates. In addition, methods and devices are provided herein for increased nucleic acid mass yield resulting from de novo nucleic acid synthesis.

Methods and devices are provided herein for surfaces for de novo nucleic acid synthesis which provide for low error rates. In addition, methods and devices are provided herein for increased nucleic acid mass yield resulting from de novo nucleic acid synthesis.

A tow coating reactor system includes a reactor for receiving fiber tow, a wedge situated adjacent the reactor and configured to receive the tow at a tip end, such that as the tow moves across the wedge, the wedge spreads the tow into a plurality of sub-tows.

A tow coating reactor system includes a reactor for receiving fiber tow, a wedge situated adjacent the reactor and configured to receive the tow at a tip end, such that as the tow moves across the wedge, the wedge spreads the tow into a plurality of sub-tows.

A gas supply system includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes, a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes, and a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.

A processing apparatus is provided. The processing apparatus includes a processing chamber, a pump, and an intersecting module. The process chamber has a gas outlet. The pump communicates with the gas outlet. The pump is configured to exhaust gas from the processing chamber via the gas outlet. The intersecting module is positioned between the pump and the gas outlet. The intersecting module includes a plurality of support members and a plurality of internal ventilating plates. The support members are arranged along a longitudinal direction. Each of the internal ventilating plates has a plurality of orifices. At least one of the internal ventilating plates is positioned between two of the support members positioned adjacent to each other in the longitudinal direction. Each of the internal ventilating plates is inclined relative to a transversal direction that is perpendicular to the longitudinal direction.