Provided is a filter device including a plurality of coils, a plural of capacitors, and a frame. The coils constitute a plurality of coil groups. Each coil group includes two or more coils. The two or more coils in each coil group are provided such that respective windings of the two or more coils extend spirally about a central axis and respective turns of the two or more coils are sequentially and repeatedly arranged in an axial direction in which the central axis extends. The coil groups are provided coaxially with the central axis. A pitch between the respective turns of the two or more coils of any one coil group among the coil groups is larger than a pitch between the respective turns of the two or more coils of the coil group provided inside the one coil group among the coil groups.

Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include placing the workpiece on a workpiece support in a processing chamber. The method can include admitting a process gas into the processing chamber. The process gas can include an ozone gas. The method can include exposing the silicon nitride layer and the low-k dielectric layer to the process gas to modify a surface wetting angle of the silicon nitride layer.

Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.

A wafer carrier includes a pocket sized and shaped to accommodate a wafer, the pocket having a base and a substantially circular perimeter, and a removable orientation marker, the removable orientation marker comprising an outer surface and an inner surface, the outer surface having an arcuate form sized and shaped to mate with the substantially circular perimeter of the pocket, and the inner surface comprising a flat face, wherein the removable orientation marker further comprises a notch at a first end of the flat face.

Examples of the present invention provide an apparatus for transferring substrates and confining a processing environment in a chamber. One example provides a hoop assembly for use in a processing chamber. The hoop assembly includes a confinement ring defining a confinement region therein. A hoop body mates with the confinement ring. The hoop body is slanted to reduce a thickness across a diameter of the hoop body. Three or more lifting fingers are attached to the hoop body and extend downwards. Each of the three or more lifting fingers has a contact tip positioned radially inward from the hoop body to form a substrate support surface below and spaced apart from the confinement region.

A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed. In an embodiment a method for producing semiconductor chips in a wafer composite includes providing a carrier having a wafer plane and a reference point, wherein the carrier is configured to accommodate at least one wafer composite in the wafer plane, providing a heating device comprising a heating plane and a first heating unit arranged laterally offset from the reference point in the heating plane, and arranging the heating device with its heating plane parallel to the wafer plane, arranging at least one wafer composite in the wafer plane of the carrier, rotating the carrier and the heating device relative to each other about an axis perpendicular to the heating plane and the wafer plane through the reference point, controlling the first heating unit such that a temperature of the carrier is influenced, providing a bending sensor for determining a bending characteristic value, the bending characteristic value being representative of a bending of the at least one wafer composite relative to the wafer plane and controlling the first heating unit based on the bending characteristic value.

There is provided a rotation detection jig used for an apparatus in which a substrate is processed inside a processing container by rotating a mounting stand for a substrate provided on one surface side of a rotary table while revolving the mounting stand with rotation of the rotary table, and supplying a processing gas to a region through which the mounting stand passes, including: a rotating element configured to rotate about a rotation shaft of the mounting stand; an encoder main body configured to detect a rotation angle of the rotating element and configured to constitute a rotary encoder together with the rotating element; a fixing member configured to fix the encoder main body to a rotating portion including the rotary table; and a signal processing part provided in the rotating portion and configured to process a detection signal detected by the encoder main body.

A method of manufacturing a support pedestal for use in semiconductor processing includes applying a protective layer on a conductive member of the support pedestal with an atomic layer deposition (ALD) process. The support pedestal has a support plate bonded to a tubular shaft. The support plate has a substrate, an electric element embedded in the substrate, and a conductive member connected to the electric element, and the tubular shaft defines an internal chamber. The ALD process introducing first precursors into the chamber of the tubular shaft to form a first monolayer on the conductive member, and introducing second precursors into the chamber of the tubular shaft to form a second monolayer on the first monolayer.

A spatial atomic layer deposition apparatus that includes a depositor head having an active surface configured to discharge a flow of a first precursor gas, a flow of a second precursor gas, and a flow of an inert gas that separates the flow of the first precursor gas and the flow of the second precursor gas, a substrate plate that opposes the depositor head and has a support surface for retaining a build substrate, a plurality of gap detection sensors producing an output signal indicative of a distance between the active surface of the depositor head and the support surface of the substrate plate, and a controller that communicates with the plurality of gap detection sensors. The gap detection sensors permit a spatial orientation of the active surface of the depositor head and the support surface of the substrate plate to be determined in real-time and monitored.