Methods and apparatus for self-assembled monolayer (SAM) deposition are provided herein. In some embodiments, an apparatus for self-assembled monolayer (SAM) deposition includes: a chamber enclosing a processing volume; a substrate support disposed in the chamber and configured to support a substrate in the processing volume; a gas distribution system coupled to the chamber and configured to distribute a process gas into the processing volume; a first SAM precursor source fluidly coupled to the gas distribution system to provide a first SAM precursor as a part of the process gas; and a second SAM precursor source fluidly coupled to the gas distribution system to provide a second SAM precursor, different than the first SAM precursor, as a part of the process gas, wherein the first and second SAM precursor sources are independently controllable to control a relative percentage of the first and second SAM precursors in the process gas with respect to each other.

A film forming method includes: (a) preparing a substrate having an oxide layer formed on the substrate; (b) supplying a nitrogen-containing gas to the substrate heated by a heater; and (c) forming a molybdenum film on the oxide layer by alternately supplying a raw material gas containing molybdenum and a reducing gas a plurality of times.

An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.

A plasma processing apparatus includes: a processing container having a cylindrical shape; a pair of plasma electrodes arranged along the longitudinal direction of the processing container while facing each other; and a radio-frequency power supply configured to supply a radio-frequency power to the pair of plasma electrodes. In the pair of plasma electrodes, an inter-electrode distance at a position distant from a power feed position to which the radio-frequency power is supplied is longer than an inter-electrode distance at the power feed position.

Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.

A method and apparatus for processing a substrate are described herein. The methods and apparatus described enable the raising and lowering of a shadow ring within a process chamber either simultaneously with or separately from a plurality of substrate lift pins. The shadow ring is raised and lowered using a shadow ring lift assembly and may be raised to a pre-determined height above the substrate during a radical treatment operation. The shadow ring lift assembly may also raise and lower the plurality of substrate lift pins to enable both the shadow ring and the substrate lift pins to be raised to a transfer position when the substrate is being transferred into or out of the process chamber.

Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring.

A semiconductor substrate processing apparatus is provided with a reaction chamber; a heater to heat the reaction chamber; and a substrate support assembly. The substrate support assembly comprising: a substrate support defining an outer support surface for supporting a substrate or substrate carrier in the reaction chamber; and a base assembly including a door for sealing the reaction chamber of the apparatus. The substrate support being connected to the base assembly through a bearing that facilitates rotation of the substrate support. The substrate support assembly is provided with a temperature sensor to measure the temperature of the bearing.

A semiconductor processing apparatus includes an outer tube, an inner tube in the outer tube and providing a process space, and a nozzle between the outer tube and the inner tube. The nozzle provides an internal passage. The inner tube provides a slit. The nozzle provides a plurality of holes. The plurality of holes are vertically spaced apart from each other. The slit vertically extends to expose at least two of the plurality of holes. The internal passage is connected to the process space through the slit and the plurality of holes.

A multi-axis mechanism device includes: a base module, a first moving module, a second moving module, a third moving module, a reaction module, a tilting module and a rotating module. The first moving module performs a first axial movement relative to the movable bearing platform to drive the reaction module to be displaced relative to the movable bearing platform. The second moving module performs a second axial movement relative to the first moving module to drive the reaction module to be displaced relative to the first moving module. The third moving module drives the movable bearing platform to perform a third axial movement relative to the module body to drive the reaction module to be displaced relative to the module body. The reaction module is driven by the tilting module to perform titling action and by the rotating module to perform rotating operation relative to the central axis.