Embodiments described herein generally relate to a susceptor support for supporting a susceptor in a deposition process. The susceptor support includes a shaft, a plate with a first major surface coupled to the shaft, and a support element extending from a second major surface of the plate. The plate may be made of a material that is optically transparent to the radiation energy from a plurality of energy sources disposed below the plate. The plate may have a thickness that is small enough to minimize radiation transmission loss and large enough to be thermally and mechanically stable to support the susceptor during processing. The thickness of the plate may range from about 2 mm to about 20 mm.

A method for chemical vapor deposition on a substrate is disclosed. The method may include directing a process gas into a reaction chamber, and heating the process gas in the reaction chamber. Heating the process gas in the reaction chamber may decompose the process gas to thereby generate a plurality of decomposition products. The method may also include applying one or more biasing fields and/or waves to the process gas upstream of the substrate, and reacting the process gas with the substrate. The one or more biasing fields and/or waves may include electromagnetic waves, electric fields, and/or magnetic fields. The biasing fields and/or waves may urge at least a portion of the process gas towards or away from the substrate.

Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

Methods and systems are provided for fabricating polymer-based imprint lithography templates having thin metallic or oxide coated patterning surfaces. Such templates show enhanced fluid spreading and filling (even in absence of purging gases), good release properties, and longevity of use. Methods and systems for fabricating oxide coated versions, in particular, can be performed under atmospheric pressure conditions, allowing for lower cost processing and enhanced throughput.

Methods and systems are provided for fabricating polymer-based imprint lithography templates having thin metallic or oxide coated patterning surfaces. Such templates show enhanced fluid spreading and filling (even in absence of purging gases), good release properties, and longevity of use. Methods and systems for fabricating oxide coated versions, in particular, can be performed under atmospheric pressure conditions, allowing for lower cost processing and enhanced throughput.

A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Precursors are prepared and employed in electron beam induced decomposition (EBID). The EBID precursors are complexes of the formula: X-M-Y, where M is Au or Ag; X is F, Cl, Br, I, CN, OR.sup.1, O.sub.2CR.sup.2, or R.sup.3; Y is P(OR).sub.3, NR.sub.3, unsubstituted or substituted pyrrole, unsubstituted or substituted pyridine, unsubstituted or substituted pyrrolidine, or unsubstituted or substituted piperidine; and where R, R.sup.1, R.sup.2, R.sup.3, and substituents of the substituted pyrrole, pyridine, pyrrolidine, or piperidine are independently H, C.sub.1-C.sub.8 alkyl, C.sub.6-C.sub.10 aryl, C.sub.1-C.sub.8 perfluoroalkyl, C.sub.1-C.sub.8 partially fluorinated alkyl, and SiR.sup.5R.sup.6R.sup.7 where R.sup.5, R.sup.6, and R.sup.7 are independently H, C.sub.1-C.sub.8 alkyl, or C.sub.1-C.sub.8 fluorinated alkyl. The decomposition of the EBID precursor results in the formation of one or more gold, silver, or any combination thereof features on a substrate.

A method is provided for depositing a planarization layer over features on a substrate using sequential polymerization chemical vapor deposition. According to one embodiment, the method includes providing a substrate containing a plurality of features with gaps between the plurality of features, delivering precursor molecules by gas phase exposure to the substrate, adsorbing the precursor molecules on the substrate to at least substantially fill the gaps with a layer of the adsorbed precursor molecules, and reacting the precursor molecules to form a polymer layer that at least substantially fills the gaps.

A method is provided for depositing a planarization layer over features on a substrate using sequential polymerization chemical vapor deposition. According to one embodiment, the method includes providing a substrate containing a plurality of features with gaps between the plurality of features, delivering precursor molecules by gas phase exposure to the substrate, adsorbing the precursor molecules on the substrate to at least substantially fill the gaps with a layer of the adsorbed precursor molecules, and reacting the precursor molecules to form a polymer layer that at least substantially fills the gaps.

Embodiments of the present invention provide a method and apparatus for plasma processing a substrate to form a film on the substrate and devices disposed thereon by controlling the ratio of ions to radicals in the plasma at a given pressure. A given pressure may be maintained to promote ion production using one plasma source, and a second plasma source may be used to provide additional radicals. In one embodiment, a low pressure plasma is generated in a processing region having the substrate positioned therein, and a high pressure plasma is generated in separate region. Radicals from the high pressure plasma are injected into the processing region having the low pressure plasma, thus, altering the natural distribution of radicals to ions at a given operating pressure. The resulting process and apparatus enables tailoring of the ion to radical ratio to allow better control of forming films on high aspect ratio features, and thus improve corner rounding, conformality of sidewall to bottom trench growth, and selective growth.