The present invention relates to liquid formulations which can be produced by dissolving at least one indium alkoxide compound which can be prepared by reacting an indium trihalide InX.sub.3 where X=F, Cl, Br, I with a secondary amine of the formula R′.sub.2NH where R′=alkyl in a molar ratio of from 8:1 to 20:1 to the indium trihalide in the presence of an alcohol of the generic formula ROH where R=alkyl in at least one solvent, a process for producing them, their use for producing indium oxide-containing or (semi)conducting layers and processes for producing indium oxide-containing layers which use the formulation of the invention.

The present invention relates to liquid formulations which can be produced by dissolving at least one indium alkoxide compound which can be prepared by reacting an indium trihalide InX.sub.3 where X=F, Cl, Br, I with a secondary amine of the formula R′.sub.2NH where R′=alkyl in a molar ratio of from 8:1 to 20:1 to the indium trihalide in the presence of an alcohol of the generic formula ROH where R=alkyl in at least one solvent, a process for producing them, their use for producing indium oxide-containing or (semi)conducting layers and processes for producing indium oxide-containing layers which use the formulation of the invention.

A method of manufacturing an epitaxial wafer in which an epitaxial layer is grown over a main surface of a silicon wafer placed substantially horizontally on a susceptor is provided. The method comprises: a growing step of the epitaxial layer; and a cooling step of cooling the epitaxial wafer having the epitaxial layer. The cooling step comprises: a wafer measurement step of measuring a temperature of the epitaxial wafer; a susceptor measurement step of measuring a temperature of the susceptor; and a control step of controlling a heater capable of heating at least the susceptor or the epitaxial wafer such that difference between a temperature of the epitaxial wafer and a temperature of the susceptor is within a predetermined range.

There is a superconducting article that includes a superconducting film comprising a substrate, one or more buffer layers, and a high temperature superconducting (HTS) layer. The superconducting layer may be comprised of the chemical composition REBa.sub.2Cu.sub.3O.sub.7−x, where RE is one or more rare earth elements, for example: Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The superconductor layer is produced using Photo-Assisted Metal Organic Chemical Vapor Deposition (PAMOCVD) and contains non-superconducting nanoparticles. The nanoparticles are substantially provided in the a-b plane and naturally oriented. The non-superconducting nanoparticles provide flux pinning centers that improve the critical current properties of the superconducting film.

A method of repairing an article including cleaning a repair area, wherein the repair area comprises a ceramic matrix composite; and depositing a ceramic material in the cleaned repair area using laser assisted chemical vapor deposition. Also disclosed is a repaired ceramic composite produced by this method.

An orthopedic implant having a subsurface level ceramic layer generally includes a base material, an intermix layer molecularly integrated with the base material that includes a mixture of the base material and a plurality of subsurface level ceramic-based molecules implanted into the base material, and an integrated ceramic surface layer molecularly integrated with and extending from the intermix layer forming at least part of a molecular structure of an outer surface of the orthopedic implant. The integrated ceramic surface layer and the base material thereafter cooperate to sandwich the intermix layer in between.

The process for producing an orthopedic implant having an integrated ceramic surface layer includes steps for positioning the orthopedic implant inside a vacuum chamber, emitting a relatively high energy beam into the at least two different vaporized metalloid or transition metal atoms in the vacuum chamber to cause a collision therein to form ceramic molecules, and driving the ceramic molecules with the ion beam into an outer surface of the orthopedic implant at a relatively high energy such that the ceramic molecules implant therein and form at least a part of the molecular structure of the outer surface of the orthopedic implant, thereby forming the integrated ceramic surface layer.

A system and apparatus for thermal treatment of a substrate with improved thermal uniformity is provided. In some embodiments, the system includes a heating element, a substrate-retaining element operable to retain a substrate, and a reflective structure operable to direct thermal energy of the heating element towards the substrate retained in the substrate-retaining element. The reflective structure includes a textured portion wherein a texture of the textured portion is configured to direct the thermal energy towards the retained substrate. In some such embodiments, the texture includes a roughened irregular surface configured to direct the thermal energy towards the retained substrate. In some such embodiments, the texture includes a plurality of circumferential ridge structures configured to direct the thermal energy towards the retained substrate.

An in-chamber plasma source in a deposition reactor system includes an array of microcavity or microchannel plasma devices having a first electrode and a second electrode isolated from plasma in microcavities or microchannels. An inlet provides connection to deposition precursor. A region interacts deposition precursor with plasma. An outlet directs precursor dissociated with the plasma onto a substrate for deposition. A reactor system includes a substrate holder across from the outlet, a chamber enclosing the in-chamber plasma source and the substrate holder, an exhaust from the chamber, and conduit supplying precursors from sources or bubblers to the inlet. A reactor system can conduct plasma enhanced atomic layer deposition at high pressures and is capable of forming a complete layer in a single cycle.

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.