Methods for plasma depositing polymers comprising cyclic siloxanes and related articles and compositions are generally provided. In some embodiments, the methods comprise flowing a precursor gas in proximity to a substrate within a PECVD reactor, wherein the precursor gas comprises an initiator and at least one monomer comprising a cyclic siloxane and at least two vinyl groups, and depositing a polymer formed from the at least one monomer on the substrate.

Methods for plasma depositing polymers comprising cyclic siloxanes and related articles and compositions are generally provided. In some embodiments, the methods comprise flowing a precursor gas in proximity to a substrate within a PECVD reactor, wherein the precursor gas comprises an initiator and at least one monomer comprising a cyclic siloxane and at least two vinyl groups, and depositing a polymer formed from the at least one monomer on the substrate.

In one embodiment, the present disclosure is directed to a method for impedance matching. A matching network includes a first reactance element and a second reactance element. A sensor detects a value related to the plasma chamber or the matching network, and a system parameter is determined based on the detected value. For the determined system parameter, an error-related value is calculated for each of a plurality of potential first reactance element positions or for each of a plurality of potential second reactance element positions. A new first reactance element position and a new second reactance element position are calculated based on the error-related values calculated in the prior step. The first reactance element and the second reactance element are then altered to their new positions to reduce a reflected power.

In one embodiment, the present disclosure is directed to a method for impedance matching. A matching network includes a first reactance element and a second reactance element. A sensor detects a value related to the plasma chamber or the matching network, and a system parameter is determined based on the detected value. For the determined system parameter, an error-related value is calculated for each of a plurality of potential first reactance element positions or for each of a plurality of potential second reactance element positions. A new first reactance element position and a new second reactance element position are calculated based on the error-related values calculated in the prior step. The first reactance element and the second reactance element are then altered to their new positions to reduce a reflected power.

Embodiments of the present invention provide apparatus, systems and methods for measuring dissociation of a process gas generated by a RPS. In one embodiment, a method of measuring dissociation of a process gas includes receiving a process gas from a RPS, the process gas including a polyatomic molecule that dissociates into at least one free radical. The method further includes irradiating the process gas with IR radiation at one or more wavelengths, detecting the IR radiation that passes through the process gas, and determining a degree of dissociation of the polyatomic molecule in the process gas based, at least in part, on the detected IR radiation. In one embodiment, the method further comprises modifying one or more settings of the RPS, based, at least in part, on the determined degree of dissociation.

Embodiments of the present invention provide apparatus, systems and methods for measuring dissociation of a process gas generated by a RPS. In one embodiment, a method of measuring dissociation of a process gas includes receiving a process gas from a RPS, the process gas including a polyatomic molecule that dissociates into at least one free radical. The method further includes irradiating the process gas with IR radiation at one or more wavelengths, detecting the IR radiation that passes through the process gas, and determining a degree of dissociation of the polyatomic molecule in the process gas based, at least in part, on the detected IR radiation. In one embodiment, the method further comprises modifying one or more settings of the RPS, based, at least in part, on the determined degree of dissociation.

Embodiments of the present disclosure generally relate to protective coatings on various substrates including aerospace components and methods for depositing the protective coatings. In one or more embodiments, a method of forming a protective coating on an aerospace component includes forming an aluminum oxide layer on a surface of the aerospace component and depositing a boron nitride layer on or over the aluminum oxide layer during a vapor deposition process. In some examples, the method includes depositing a metal-containing catalytic layer on the aluminum oxide layer before depositing the boron nitride layer. The boron nitride layer can include hexagonal boron nitride (hBN).

Embodiments of the present disclosure generally relate to protective coatings on various substrates including aerospace components and methods for depositing the protective coatings. In one or more embodiments, a method of forming a protective coating on an aerospace component includes forming an aluminum oxide layer on a surface of the aerospace component and depositing a boron nitride layer on or over the aluminum oxide layer during a vapor deposition process. In some examples, the method includes depositing a metal-containing catalytic layer on the aluminum oxide layer before depositing the boron nitride layer. The boron nitride layer can include hexagonal boron nitride (hBN).

What is provided is a transistor including a gate electrode, a gate insulating film, a semiconductor film, a source electrode, and a drain electrode, in which the gate insulating film is a laminated film in which a SiO.sub.x film and a SiC.sub.yN.sub.z film are alternately formed, the total number of films constituting the laminated film is 3 or more and 18 or less, and the thickness of each film constituting the laminated film is 25 nm or more and 150 nm or less.

The current disclosure relates to deposition of a transition metal chalcogenide barrier layer. The method of depositing a transition metal chalcogenide barrier layer comprises providing a substrate having an opening into a reaction chamber, providing a transition metal precursor in the reaction chamber in vapor phase and providing an reactive chalcogen species in the reaction chamber. The method may be a plasma-enhanced atomic layer deposition method. The disclosure further relates to an interconnect comprising a transition metal chalcogenide barrier layer.