A substrate processing apparatus includes: a chamber; and a processing gas supply unit connected to the chamber via a processing gas supply flow path and configured to supply a processing gas. The processing gas supply unit includes a raw material cartridge that includes a raw material tank that accommodates a porous member containing a metal-organic framework adsorbed with gas molecules of a raw material of the processing gas; a main body configured to communicate the raw material tank and the processing gas supply flow path with each other when the raw material cartridge is attached; and a desorption mechanism configured to desorb the gas molecules of the raw material of the processing gas and allow the gas molecules to flow out as the processing gas to the processing gas supply flow path while the raw material cartridge is attached to the main body.

The present disclosure provides a substrate processing method and a substrate processing apparatus that perform selective film formation. The substrate processing method includes: forming a silicon-containing film by repeating forming an adsorption layer on a substrate on which a pattern of a concave portion is formed by supplying a silicon-containing gas to the substrate and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer; and etching the silicon-containing film, wherein the forming the silicon-containing film includes modifying at least one of the adsorption layer and the silicon-containing film by generating a He-containing plasma.

Various kinematic mounts used to mount a carrier ring carrying a substrate to a pedestal within a processing chamber. Each of the various kinematic mounts provide a smooth gliding action during mounting, reduce the generation of unwanted particles and prevent free-fall of the carrier ring to the pedestal.

Various kinematic mounts used to mount a carrier ring carrying a substrate to a pedestal within a processing chamber. Each of the various kinematic mounts provide a smooth gliding action during mounting, reduce the generation of unwanted particles and prevent free-fall of the carrier ring to the pedestal.

Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include providing a backside inhibition gas as part of a deposition-inhibition-deposition (DID) sequence.

The present disclosure provides a shielding mechanism and a thin-film-deposition equipment using the same, wherein the shielding mechanism includes two shield members and a driver. The driver includes a motor and a shaft seal. The motor interconnects the two shield members via the shaft seal, and such that to drive the two shield members to sway in opposite directions and to switch between an open state and a shielding state. Furthermore, each of the two shield members is formed with at least one cavity, for reducing weights thereof and loading of the motor and the driver.

The present disclosure provides a thin-film-deposition equipment, which includes a main body, a carrier and a shielding device, wherein a portion of the shielding device and the carrier are disposed within the main body. The main body includes a reaction chamber, and two sensor areas connected to the reaction chamber, wherein the sensor areas are smaller than the reaction chamber. The shielding device includes a first-shield member, a second-shield member and a driver. The driver interconnects the first-shield member and the second-shield member, for driving the first-shield member and the second-shield member to move in opposite directions. During a deposition process, the two shield members are separate from each other into an open state, and respectively enter the two sensor areas. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier.

The present disclosure provides a thin-film-deposition equipment, which includes a main body, a carrier and a shielding device, wherein a portion of the shielding device and the carrier are disposed within the main body. The main body includes a reaction chamber, and two sensor areas connected to the reaction chamber, wherein the sensor areas are smaller than the reaction chamber. The shielding device includes a first-shield member, a second-shield member and a driver. The driver interconnects the first-shield member and the second-shield member, for driving the first-shield member and the second-shield member to move in opposite directions. During a deposition process, the two shield members are separate from each other into an open state, and respectively enter the two sensor areas. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier.

A method of manufacturing a semiconductor device, includes attaching a first susceptor to a film forming apparatus, measuring a magnitude of a warp of the first susceptor, setting a first initial film formation condition as a film formation condition of the film forming apparatus in accordance with the measured magnitude of the warp of the first susceptor, and placing a plurality of first wafers on the first susceptor and forming a first film on the plurality of first wafers under the film formation condition. The setting of the first initial film formation condition includes reading the first initial film formation condition from a recording medium storing a database. The database includes a plurality of pieces of data in which magnitudes of warps of susceptors are associated with initial film formation conditions for forming the first film.

A method of manufacturing a semiconductor device, includes attaching a first susceptor to a film forming apparatus, measuring a magnitude of a warp of the first susceptor, setting a first initial film formation condition as a film formation condition of the film forming apparatus in accordance with the measured magnitude of the warp of the first susceptor, and placing a plurality of first wafers on the first susceptor and forming a first film on the plurality of first wafers under the film formation condition. The setting of the first initial film formation condition includes reading the first initial film formation condition from a recording medium storing a database. The database includes a plurality of pieces of data in which magnitudes of warps of susceptors are associated with initial film formation conditions for forming the first film.