A system. The system may include a first zone into which a first precursor is introduced; a second zone into which a second precursor is introduced; a third zone between the first zone and the second zone and in which a reactive species is generated; a fourth zone between the first zone and the third zone; a fifth zone between the second zone and the third zone; wherein a process gas is introduced into the fourth zone and the fifth zone; wherein the reactive species and the first precursor is mixed in the fourth zone and the reactive species and the second precursor is mixed in the fifth zone; and a substrate transport mechanism.

A substrate processing apparatus includes: a vacuum transfer chamber including a substrate transfer mechanism provided in a vacuum transfer space thereof to collectively hold and transfer substrates with a substrate holder; and a processing chamber having processing spaces and connected to the vacuum transfer chamber. The processing chamber includes a loading/unloading port provided on a side of the vacuum transfer chamber to allow the vacuum transfer space and the processing spaces to communicate with each other. The processing spaces include a first processing space in which a first process is performed on the substrate and a second processing space in which a second process is performed on the substrate subjected to the first process. The first and second processing spaces are arranged in a direction in which the substrate is loaded and unloaded, and the substrate holder has a length that extends over the first and second processing spaces.

A substrate processing apparatus includes: a vacuum transfer chamber including a substrate transfer mechanism provided in a vacuum transfer space thereof to collectively hold and transfer substrates with a substrate holder; and a processing chamber having processing spaces and connected to the vacuum transfer chamber. The processing chamber includes a loading/unloading port provided on a side of the vacuum transfer chamber to allow the vacuum transfer space and the processing spaces to communicate with each other. The processing spaces include a first processing space in which a first process is performed on the substrate and a second processing space in which a second process is performed on the substrate subjected to the first process. The first and second processing spaces are arranged in a direction in which the substrate is loaded and unloaded, and the substrate holder has a length that extends over the first and second processing spaces.

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. Electrodes may be disposed adjacent the process volume and process fluid is provided to the process volume via a plurality of fluid conduits to facilitate immersion field guided post exposure bake processes. A post process chamber for rinsing, developing, and drying a substrate is also provided.

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. Electrodes may be disposed adjacent the process volume and process fluid is provided to the process volume via a plurality of fluid conduits to facilitate immersion field guided post exposure bake processes. A post process chamber for rinsing, developing, and drying a substrate is also provided.

A vapor deposition reactor apparatus, systems and methods for deposition of thin films, particularly high-temperature superconducting (HTS) coated conductors, utilize multi-sided susceptors and susceptor pairs for increased production throughput. The reactors may also be configured in multi-stack arrangements of the susceptors within a single reactor chamber for additional throughput gains.

Provided herein are methods and apparatuses for filling features metal-containing materials. One aspect of the disclosure relates to a method for filling structures with a metal-containing material, the method including: providing a structure to be filled with a metal-containing material, exposing the structure to multiple deposition cycles, with each deposition cycle including exposure to one or more alternating reducing agent (e.g. hydrogen (H2)) dose/inert gas purge pulses pulse followed by exposure to one or more alternating metal precursor dose pulses and inert gas purge pulses. The metal may be tungsten (W) or molybdenum (Mo) in some embodiments. In some embodiments, the structure is a partially fabricated (3-D) NAND structure. Apparatuses to perform the methods are also provided.

A thin film deposition apparatus includes: a chamber configured to process a plurality of substrates; a plurality of heater members disposed to correspond to the substrates to heat the substrates; a plurality of lift pins configured to be elevated through the heater members and support lower surfaces of the substrates; a plurality of support plates on which lower ends of the lift pins are configured to be seated; a plurality of support columns coupled with and supporting the heater members; and a plurality of spray ports configured to supply a process gas to the substrates, wherein the support plates are mounted on a plurality of seats formed on at least one side of the chamber, and configured to be elevated together with the heater members when the heater members are elevated.

Apparatuses and methods for depositing materials on both sides of a web while it passes a substantially vertical direction are provided. In particular embodiments, a web does not contact any hardware components during the deposition. A web may be supported before and after the deposition chamber but not inside the deposition chamber. At such support points, the web may be exposed to different conditions (e.g., temperature) than during the deposition. Also provided are substrates having materials deposited on both sides that may be fabricated by the methods and apparatuses.

A system for forming surface modified substrates includes a laser system, and a laser processing chamber. A laser scanner automatically controls a position of the laser beam or an x-y translating stage upon which the laser processing chamber is mounted thereon for scanning the laser beam relative to a substrate of material (M) having a bulk portion and an outer surface integrated with the bulk portion, and a coating including metal organic molecules including at least one metal X or particles of metal X on the outer surface. At laser-heated spots atoms of X from the metal coating diffuse into the outer surface to form a modified surface layer including both M and X. The modified surface layer has a thickness of 1 nm, and a 25° C. electrical conductivity ≥2.5% above or ≤2.5% below a 25° C. electrical conductivity in the bulk portion.