C23C18/08

APPARATUS, SYSTEM, AND METHOD OF PROVIDING A RAMPED INTERCONNECT FOR SEMICONDUCTOR FABRICATION
20220093424 · 2022-03-24 · ·

The disclosure is and includes at least an apparatus, system and method for a ramped electrical interconnection for use in semiconductor fabrications. The apparatus, system and method includes at least a first semiconductor substrate having thereon a first electrical circuit comprising first electrical components; a second semiconductor substrate at least partially covering the first electrical circuit, and having thereon a second electrical circuit comprising second electrical components; a ramp formed through the second semiconductor substrate between at least one of the first electrical components and at least one of the second electrical components; and an additively manufactured conductive trace formed on the ramp to electrically connect the at least one first electrical component and the at least one second electrical component.

DIRECT METAL PRINTING WITH STEREOLITHOGRAPHY
20210323065 · 2021-10-21 ·

An additive manufacturing process for forming a metallic layer on the surface of the substrate includes fabricating a substrate from a polymerizable composition by a stereolithographic process, and contacting the reactive surface with an aqueous solution including a metal precursor. The metal precursor includes a metal, and the polymerizable composition includes a multiplicity of multifunctional components. Each multifunctional component includes a reactive moiety extending from a surface of the substrate to form a reactive surface. An interface between the reactive surface and the aqueous solution is selectively irradiated to form nanoparticles including the metal in a desired pattern. The nanoparticles are chemically coupled to the reactive surface by reactive moieties, thereby forming a metallic layer on the surface of the substrate.

Coating of nano-scaled cavities

Methods, systems, and apparatus for coating the internal surface of nano-scale cavities on a substrate are contemplated. A first fluid of high wettability is applied to the nano-scale cavity, filling the cavity. A second fluid carrying a conductor or a catalyst is applied over the opening of the nano-scale cavity. The second fluid has a lower vapor pressure than the first fluid. The first fluid is converted to a gas, for example by heating the substrate. The gas exits the nano-scale cavity, creating a negative pressure or vacuum in the nano-scale cavity. The negative pressure draws the second fluid into the nano-scale cavity. The conductor is deposited on the interior surface of the nano-scale cavity, preferably less than 10 nm thick.

TRANSPARENT CONDUCTIVE METAL LAYERS
20210309868 · 2021-10-07 · ·

A method for growing a transparent conductive metal layer on a substrate is disclosed. The method includes the steps of applying crystal growth ink to a surface of the substrate, wherein the crystal growth ink includes a metal ionic precursor; and exposing the substrate to plasma irradiation to cause the growing of a crystalline metal framework on the substrate, wherein the exposure is based on a set of predefined exposure parameters.

Direct metal printing with stereolithography

An additive manufacturing process for forming a metallic layer on the surface of the substrate includes fabricating a substrate from a polymerizable composition by a stereolithographic process, and contacting the reactive surface with an aqueous solution including a metal precursor. The metal precursor includes a metal, and the polymerizable composition includes a multiplicity of multifunctional components. Each multifunctional component includes a reactive moiety extending from a surface of the substrate to form a reactive surface. An interface between the reactive surface and the aqueous solution is irradiated to form nanoparticles including the metal. The nanoparticles are chemically coupled to the reactive surface by reactive moieties, thereby forming a metallic layer on the surface of the substrate.

ELECTRODE FOR THE ELECTROPLATING OR ELECTRODEPOSITION OF A METAL
20210269931 · 2021-09-02 ·

An electrode for electroplating or electrodeposition of a metal and to the method for obtaining the same is provided. The electrode has a conductive substrate, at least one layer of an electrochemically active coating placed on the substrate, and at least one topcoating layer of valve metal.

Substrate for sensing, a method of fabricating the substrate, and analyzing apparatus including the substrate

A substrate for sensing, a method of manufacturing the substrate, and an analyzing apparatus including the substrate are provided. The substrate for sensing includes: a support layer; a plurality of metal nanoparticle clusters arranged on the support layer; and a plurality of perforations arranged among the plurality of metal nanoparticle clusters. The plurality of metal nanoparticle clusters each comprise a plurality of metal nanoparticles stacked in a three-dimensional structure. Each of the plurality of perforations transmits incident light therethrough.

Substrate for sensing, a method of fabricating the substrate, and analyzing apparatus including the substrate

A substrate for sensing, a method of manufacturing the substrate, and an analyzing apparatus including the substrate are provided. The substrate for sensing includes: a support layer; a plurality of metal nanoparticle clusters arranged on the support layer; and a plurality of perforations arranged among the plurality of metal nanoparticle clusters. The plurality of metal nanoparticle clusters each comprise a plurality of metal nanoparticles stacked in a three-dimensional structure. Each of the plurality of perforations transmits incident light therethrough.

GENERATION OF METALS IN TEXTILES

In example implementations, a method to convert metal precursors in textiles is provided. The method includes applying a liquid metal precursor to a textile. Then, energy (e.g., heat and/or pressure) is applied to the textile. The metal precursor is converted into metal nanoparticles in the textile by sustaining application of the energy.

Apparatus, system, and method of providing a ramped interconnect for semiconductor fabrication
11081375 · 2021-08-03 · ·

The disclosure is and includes at least an apparatus, system and method for a ramped electrical interconnection for use in semiconductor fabrications. The apparatus, system and method includes at least a first semiconductor substrate having thereon a first electrical circuit comprising first electrical components; a second semiconductor substrate at least partially covering the first electrical circuit, and having thereon a second electrical circuit comprising second electrical components; a ramp formed through the second semiconductor substrate between at least one of the first electrical components and at least one of the second electrical components; and an additively manufactured conductive trace formed on the ramp to electrically connect the at least one first electrical component and the at least one second electrical component.