Methods, systems, and apparatus for coating the internal surface of nano-scale cavities on a substrate are contemplated. A first fluid of high wettability is applied to the nano-scale cavity, filling the cavity. A second fluid carrying a conductor or a catalyst is applied over the opening of the nano-scale cavity. The second fluid has a lower vapor pressure than the first fluid. The first fluid is converted to a gas, for example by heating the substrate. The gas exits the nano-scale cavity, creating a negative pressure or vacuum in the nano-scale cavity. The negative pressure draws the second fluid into the nano-scale cavity. The conductor is deposited on the interior surface of the nano-scale cavity, preferably less than 10 nm thick.

Provided is a method for manufacturing a wiring board that forms a wiring layer having favorable adhesion without a resin resist pattern. A method prepares a substrate with seed-layer including: a underlayer on the surface of an insulating substrate; and a seed layer on the surface of the underlayer, the seed layer having a predetermined pattern and containing metal; presses a solid electrolyte membrane against the seed layer and the underlayer, and applies voltage between an anode and the underlayer to reduce metal ions in the membrane and form a metal layer on the surface of the seed layer; and removes an exposed region without the seed layer and the metal layer of the underlayer to form a wiring layer including the underlayer, the seed layer and the metal layer on the surface of the substrate.

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some implementations, the methods involve providing a tungsten (W)-containing layer on a substrate; and depositing a molybdenum (Mo)-containing layer on the W-containing layer. In some implementations, the methods involve depositing a Mo-containing layer directly on a dielectric or titanium nitride (TiN) substrate without an intervening W-containing layer.

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some implementations, the methods involve providing a tungsten (W)-containing layer on a substrate; and depositing a molybdenum (Mo)-containing layer on the W-containing layer. In some implementations, the methods involve depositing a Mo-containing layer directly on a dielectric or titanium nitride (TiN) substrate without an intervening W-containing layer.

Apparatus and methods for making metal-connected particle articles. A metal containing fluid is selectively applied to a layer of particles. The metal in the fluid is used to form metal connections between particles. The metal connections are formed at temperatures below the sintering temperature of the particles in the layer of particles.

The invention relates to the field of rail transport. The present method for protecting wheelsets and a railroad bed from wear consists in applying, for the purpose of protecting coupling components under mutual friction from wear, an anti-wear coating that consists of ductile metals in the form of films on the frictional surface of said coupling components. A device for controlling the supply of a metal-plating ionisation solution emits a signal for activating or deactivating an electromagnetic valve mounted on a heated air duct connected to a reservoir that contains said metal-plating ionisation solution. The advantages of the present invention consist in more effectively protecting working surfaces from mechanical and hydrogen wear.

The present invention provides electrodes comprising a core substrate, and internal layer coating, and an external layer coating and processes to prepare such electrodes.

The present invention provides electrodes comprising a core substrate, and internal layer coating, and an external layer coating and processes to prepare such electrodes.

Disclosed are single atom dispersions and multi-atom dispersions, and systems and methods for synthesizing the atomic dispersions. An exemplary method of synthesizing atomic dispersions includes: positioning a loaded substrate which includes a substrate in which is loaded with at least one of: a precursor of an element or a cluster of an element, applying one or more temperature pulses to the loaded substrate where a pulse of the temperature pulse(s) applies a target temperature for a duration, maintaining a cooling period after the pulse, and providing single atoms of the element dispersed on the substrate after the one or more temperature pulses. The target temperature applied by the pulse is between 500 K and 4000 K, inclusive, and the duration is between 1 millisecond and 1 minute, inclusive.

The disclosure is and includes at least an apparatus, system and method for a ramped electrical interconnection for use in semiconductor fabrications. The apparatus, system and method includes at least a first semiconductor substrate having thereon a first electrical circuit comprising first electrical components; a second semiconductor substrate at least partially covering the first electrical circuit, and having thereon a second electrical circuit comprising second electrical components; a ramp formed through the second semiconductor substrate between at least one of the first electrical components and at least one of the second electrical components; and an additively manufactured conductive trace formed on the ramp to electrically connect the at least one first electrical component and the at least one second electrical component.