The disclosure is and includes at least an apparatus, system and method for a ramped electrical interconnection for use in semiconductor fabrications. The apparatus, system and method includes at least a first semiconductor substrate having thereon a first electrical circuit comprising first electrical components; a second semiconductor substrate at least partially covering the first electrical circuit, and having thereon a second electrical circuit comprising second electrical components; a ramp formed through the second semiconductor substrate between at least one of the first electrical components and at least one of the second electrical components; and an additively manufactured conductive trace formed on the ramp to electrically connect the at least one first electrical component and the at least one second electrical component.

According to one embodiment, a three-dimensional structure includes: at least one photopolymer having at least one metal dispersed throughout at least portions of a bulk of the structure. The structure is characterized by features having a horizontal and/or vertical feature resolution in a range from several hundred nanometers to several hundred microns. The portions of the bulk throughout which metal is dispersed may optionally be selectively determined. In more embodiments, the structure may have electroless plated metal formed on surfaces thereof, alternatively or in addition to the metal dispersed throughout the bulk of the structure. The electroless plating may be achieved without the use of a surface activation bath. Corresponding methods for forming various embodiments of such three dimensional structures are also disclosed.

An insulated solution injector may include an outer tube and an inner tube arranged within the outer tube. The outer tube and the inner tube may define an annular space therebetween, and the inner tube may define a solution space within. The annular space may be configured so as to insulate the solution within the solution space. As a result, the solution may be kept to a temperature below its decomposition temperature prior to injection. Accordingly, the decomposition of the solution and the resulting deposition of its constituents within the solution space may be reduced or prevented, thereby decreasing or precluding the occurrence of a blockage.

The present disclosure, in various examples, provides copper nanoparticle conductive inks and methods for making such conductive inks. The conductive ink may be deposited without the need for subsequent annealing. The conductive ink composition may include a slurry of copper nanoparticles in water. The copper nanowires may be made from copper or a copper alloy. The copper nanoparticles may be copper nanowires, such as high aspect ratio copper nanowires. The copper nanoparticles may be encapsulated by nickel, a nickel-rich material, zinc, aluminum, iron, or other metals or metal alloys.

A method and system for forming a thin patterned metal film on a substrate are presented. The method includes applying an ink composition on a pre-treated surface of the substrate, wherein the ink composition includes at least metal cations; and exposing at least the applied ink composition on the substrate to a low-energy plasma, wherein the low-energy plasma is operated according to a first set of exposure parameters.

A method and system for forming a thin patterned metal film on a substrate are presented. The method includes applying an ink composition on a pre-treated surface of the substrate, wherein the ink composition includes at least metal cations; and exposing at least the applied ink composition on the substrate to a low-energy plasma, wherein the low-energy plasma is operated according to a first set of exposure parameters.

A method of producing a composite material containing a substrate and a metal film formed on the substrate, the method including coating a metallic fine particle-containing ink on the substrate to form the metal film on the substrate. The substrate has a heat resisting temperature of 130 C. or less. The metallic fine particle-containing ink includes metallic fine particles A dispersed with a polymer B, the metallic fine particles A having a volume average particle diameter D.sub.A of 10 nm or more and 60 nm or less. The metal film has a cross-sectional porosity of 2% by area or more and 30% by area or less, and the metal film has a content of a metal of 90% by mass or more.

A copper-based ink contains copper acetate, 3-dimethylamino-1,2-propanediol and a silver salt. The ink may be coated on a substrate and decomposed on the substrate to form a conductive copper coating on the substrate. The ink provides micron-thick traces and may be screen printed and thermally sintered in the presence of up to about 500 ppm of oxygen or photo-sintered in air to produce highly conductive copper features. Sintered copper traces produced from the ink have improved air stability, and have improved sheet resistivity for 5-20 mil wide screen-printed lines with excellent resolution.

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some implementations, the methods involve providing a tungsten (W)-containing layer on a substrate; and depositing a molybdenum (Mo)-containing layer on the W-containing layer. In some implementations, the methods involve depositing a Mo-containing layer directly on a dielectric or titanium nitride (TiN) substrate without an intervening W-containing layer.

A plated product includes a component and an overall layer plated on a surface of the component. The overall layer includes a copper layer, a nickel layer, a nickel-tungsten layer, an inner golden layer, a palladium layer, an outer golden layer and a rhodium-ruthenium layer. The copper layer is plated on a surface of the component. The nickel layer, the nickel-tungsten layer, the inner golden layer, the palladium layer, the outer golden layer and the rhodium-ruthenium layer are plated on a surface of the copper layer in sequence.