Patent classifications
C23C18/08
Nanoparticles and systems and methods for synthesizing nanoparticles through thermal shock
Systems and methods of synthesizing nanoparticles on substrates using rapid, high temperature thermal shock. A method involves depositing micro-sized particles or salt precursors on a substrate, and applying a rapid, high temperature thermal shock to the micro-sized particles or the salt precursors to become nanoparticles on the substrate. A system may include a rotatable member that receives a roll of a substrate sheet having micro-sized particles or salt precursors; a motor that rotates the rotatable member so as to unroll the substrate; and a thermal energy source that applies a short, high temperature thermal shock to the substrate. The nanoparticles may be metallic, ceramic, inorganic, semiconductor, or compound nanoparticles. The substrate may be a carbon-based substrate, a conducting substrate, or a non-conducting substrate. The high temperature thermal shock process may be enabled by electrical Joule heating, microwave heating, thermal radiative heating, plasma heating, or laser heating.
Compositions and methods for forming articles having silver metal
Electrically-conductive silver metal is provided in a pattern on a substrate having a first supporting side and a second opposing supporting side. One or both of the first supporting side and the second opposing supporting side has one or more electrically-conductive silver metal containing patterns containing the electrically-conductive silver metal; an α-oxy carboxylate; a 5- or 6-membered N-heteroaromatic compound; and a polymer that is either (i) a hydroxy-containing cellulosic polymer or (ii) a non-cellulosic acrylic polymer having a halo- or hydroxy-containing side chain. Such articles can be used in various devices and electrodes.
Compositions and methods for forming articles having silver metal
Electrically-conductive silver metal is provided in a pattern on a substrate having a first supporting side and a second opposing supporting side. One or both of the first supporting side and the second opposing supporting side has one or more electrically-conductive silver metal containing patterns containing the electrically-conductive silver metal; an α-oxy carboxylate; a 5- or 6-membered N-heteroaromatic compound; and a polymer that is either (i) a hydroxy-containing cellulosic polymer or (ii) a non-cellulosic acrylic polymer having a halo- or hydroxy-containing side chain. Such articles can be used in various devices and electrodes.
Tungsten bronze thin films and method of making the same
The present disclosure relates to tungsten bronze thin films and method of making the same. Specifically, the present disclosure relates to a thin, homogeneous, highly conducting cubic tungsten bronze film with densely packed micron size particles and the process of making the film.
Tungsten bronze thin films and method of making the same
The present disclosure relates to tungsten bronze thin films and method of making the same. Specifically, the present disclosure relates to a thin, homogeneous, highly conducting cubic tungsten bronze film with densely packed micron size particles and the process of making the film.
Method for patterning a metal on a substrate and articles comprising same
A method for patterning a metal layer on a substrate is disclosed. Furthermore, a kit comprising a first composition comprising a reducing agent and a second composition comprising a metal salt, and an article comprising a substrate in contact with a metal layer are also disclosed.
METHOD FOR MANUFACTURING THERMISTOR, AND THERMISTOR
The present invention is provided with a base electrode layer forming step of forming a base electrode layer by applying and sintering a conductive paste on an end surface of the thermistor element, an oxide layer forming step of forming an oxide layer on a surface of the base electrode layer, a cover electrode layer forming step of forming a cover electrode layer by applying and sintering a conductive paste on a surface of the oxide layer, and a conduction heat treatment step of performing a heat treatment such that the base electrode layer and the cover electrode layer are electrically conductive, in which the electrode portion having the base electrode layer and the cover electrode layer is formed and a plating step of forming a metal plating layer on a surface of the cover electrode layer is provided after the conduction heat treatment step.
Metal-connected particle articles
Apparatus and methods for making metal-connected particle articles. A metal containing fluid is selectively applied to a layer of particles. The metal in the fluid is used to form metal connections between particles. The metal connections are formed at temperatures below the sintering temperature of the particles in the layer of particles.
NOBLE METAL COMPLEXES COMPRISING DIOLEFIN AND C6-C18 MONOCARBOXYLATE LIGANDS FOR SURFACE COATING
The invention relates to a noble metal complex comprising diolefin and C6-C18 monocarboxylate ligands of the type [LPd[O(CO)R1]X].sub.n, [LRh[O(CO)R1]].sub.m or [LIr[O(CO)R1]].sub.m, in which L represents a compound acting as a diolefin ligand, wherein X is selected from bromide, chloride, iodide and —O(CO)R2, wherein —O(CO)R1 and —O(CO)R2 represent identical or different non-aromatic C6-C18 monocarboxylic acid residues, in each case with the exception of a phenylacetic acid residue, and wherein n is an integer ≥1 and m is an integer ≥2.
NOBLE METAL COMPLEXES COMPRISING DIOLEFIN AND C6-C18 MONOCARBOXYLATE LIGANDS FOR SURFACE COATING
The invention relates to a noble metal complex comprising diolefin and C6-C18 monocarboxylate ligands of the type [LPd[O(CO)R1]X].sub.n, [LRh[O(CO)R1]].sub.m or [LIr[O(CO)R1]].sub.m, in which L represents a compound acting as a diolefin ligand, wherein X is selected from bromide, chloride, iodide and —O(CO)R2, wherein —O(CO)R1 and —O(CO)R2 represent identical or different non-aromatic C6-C18 monocarboxylic acid residues, in each case with the exception of a phenylacetic acid residue, and wherein n is an integer ≥1 and m is an integer ≥2.