A method that includes selectively ejecting, from a first nozzle, a patterning material on to a surface of a substrate to define an area within to eject a first printable ammonium-based chalcogenometalate fluid; ejecting, from a second nozzle, the first printable ammonium-based chalcogenometalate fluid within the area defined by the patterning material to form a first layer of the printable ammonium-based chalcogenometalate fluid; and heating the first layer of printable ammonium-based chalcogenometalate fluid to dissipate the first printable ammonium-based chalcogenometalate fluid into a transition metal dichalcogenide having the form MX.sub.2.

Methods for forming carbon-based lubricious and/or wear-protective films in situ on the surface of steel alloys are provided. The methods use chromium-containing steel alloys, molybdenum-containing steel alloys, and steel alloys that contain both copper and nickel. When such alloys are subjected to a rubbing motion in the presence of a hydrocarbon fluid, the chromium, molybdenum, copper, and nickel in the steel alloy catalyzes the formation of solid carbon-containing films that reduce the friction, wear, or both of the contacting surfaces.

A coating process of a coating liquid using a nozzle is performed on a coating target structure including a semiconductor element and a wire bonded to the semiconductor element by a wire bonding process. The nozzle has a transport wind generating function of generating a liquid transport wind in a spiral manner. Thus, the coating liquid discharged from the coating liquid supply port of the nozzle is supplied to the coating target structure along the directivity of the liquid transport wind. Then, a drying process is performed on the coating target structure to form a primary layer containing a silane coupling agent as a constituent material on an outer periphery of the wire.

The plasma-resistant coating film according to the present invention is formed on a substrate, including crystalline Y.sub.2O.sub.3 particles having an average particle diameter of 0.5 μm to 5.0 μm in a SiO.sub.2 film, in which a film density of the plasma-resistant coating film is 90% or more, the film density being obtained by performing image analysis of a cross section of the film with an electron scanning microscope and by using the following expression (1), a size of pores in the film is 5 μm or less in terms of diameter, and a peeling rate of the film from the substrate measured by performing a cross-cut test is 5% or less. Film density (%)=[(S.sub.1−S.sub.2)/S.sub.1]×100 (1). However, in the expression (1), S.sub.1 is an area of the film and S.sub.2 is an area of a pore portion in the film.

The invention relates to method for applying a protective coating material to a structural layer to form a protective coating.

A method of manufacturing a layer of crystalline ytterbium doped zirconia on a substrate is disclosed. The method includes depositing a solution including precursor metal salts of the ytterbium doped zirconia onto a surface of the substrate, wherein the surface is a metallic or a ceramic surface. The solution is dried to form a film of the precursor metal salts on the surface. The film of the precursor metal salts is heated to decompose it to form an ytterbium doped zirconia. The previous steps may optionally be repeated. The film(s) are fired in order to form the layer of crystalline ytterbium doped zirconia. The ytterbium doped zirconia has a formula:

([Yb.sub.xM.sub.1−x].sub.2O.sub.3).sub.z(ZrO.sub.2).sub.1−z

wherein M is a metallic dopant ion; z is in the range of 0.03 to 0.13; and x is in the range of 0.05 to 1.

Methods of manufacture of an optical diffuser. In one embodiment, an optical diffuser is formed by providing a wafer including a silicon slice of which an upper face is covered with a first layer made of a first material itself covered with a second layer made of a second selectively etchable material with respect to the first material. The method further includes forming openings in the second layer extending up to the first layer and filling the openings in the second layer with a third material. The method yet further includes bonding a glass substrate to the wafer on the side of its upper face and removing the silicon slice.

A method of manufacturing transition metal chalcogenide thin films, includes the operations of forming a transition metal chalcogenides precursor on a substrate, and irradiating light onto the transition metal chalcogenides precursor. The transition metal chalcogenides precursor includes an amine-based ligand.

The present invention provides various passive electronic components comprising a layer of coated particles, and methods for producing and using the same. Some of the passive electronic components of the invention include, but are not limited to conductors, resistors, current collectors, capacitors, piezoelectronic devices, inductors and transformers. The present invention also provides energy storage devices and electrode layers for such energy storage devices having passive, electrically-conductive particles coated with one or more thin film materials.

Embodiments of the present disclosure generally relate to protective coatings on an aerospace component and methods for depositing the protective coatings. The protective coating can be anti-coking coatings to reduce or suppress coke formation when the aerospace component is heated in the presence of a fuel. In one or more embodiments, a method for depositing the protective coating on an aerospace component includes exposing the aerospace component to a cleaning process to produce a cleaned surface on the aerospace component and sequentially exposing the aerospace component to a precursor and a reactant to form a protective coating on the cleaned surface of the aerospace component by an atomic layer deposition (ALD) process. The aerospace component can be one or more of a fuel nozzle, a combustor liner, a combustor shield, a heat exchanger, a fuel line, a fuel valve, or any combination thereof.