A solution containing a diketone compound having an alkoxy group, a dialkylzinc represented by general formula (1) and/or a partial hydrolysate of the dialkylzinc, and a solvent is described. A method for producing a zinc oxide thin film involves applying the dialkylzinc solution or a solution containing a dialkylzinc partial hydrolysate to a base material.
ZnR.sup.10.sub.2  (1)
In the formula, R.sup.10 is a C.sub.1-6 linear or branched alkyl group. The solution containing dialkylzinc or dialkylzinc partial hydrolysate can be handled in air, making it possible to form a transparent thin film having high adhesiveness to a substrate even with film formation in air.

A multilayer structure including a substrate and a first stack of a layer of SiO.sub.2 and a layer of material of the SiO.sub.xN.sub.yH.sub.z type positioned between the substrate and the layer of SiO.sub.2, in which the layer of SiO.sub.2 and the layer of material of the SiO.sub.xN.sub.yH.sub.z type have thicknesses (e.sub.B, e.sub.A) such that the thickness of the layer of SiO.sub.2 is less than or equal to 60 nm, the thickness of the layer of material of the SiO.sub.xN.sub.yH.sub.z type (e.sub.B) is more than twice the thickness (e.sub.A) of the layer of SiO.sub.2, and the sum of the thicknesses of the layer of SiO.sub.2 and of the layer of material of the SiO.sub.xN.sub.yH.sub.z type is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.

The present invention relates to a method of manufacturing coated carbon nanotubes, the method comprising the steps of: functionalizing the carbon nanotubes in a solvent comprising a silane polymer; coating the carbon nanotubes with a SiO.sub.2 layer; depositing metal catalyst particles on the SiO.sub.2 layer of the carbon nanotubes; and performing electroless plating to form an Ag coating on the SiO.sub.2 layer of the carbon nanotubes. The invention also relates Ag-coated CNTs, and to the use of Ag-coated CNTs as interconnects in a flexible electronic film.

The present invention relates to a continuous roll-to-roll process for improving the water tolerance of bio-based polymers, in particular cellulose nanofibrils (CNF) films. Furthermore, the invention provides a method, which combines surface modification/functionalization for improving water stability and wet strength, UV/Ozone treatment, corona treatment or plasma activation for purifying and activating the surface and thus increasing the reaction efficiency, and further hydrophobization of the surface of CNF film.

The present invention relates to liquid formulations which can be produced by dissolving at least one indium alkoxide compound which can be prepared by reacting an indium trihalide InX.sub.3 where X=F, Cl, Br, I with a secondary amine of the formula R′.sub.2NH where R′=alkyl in a molar ratio of from 8:1 to 20:1 to the indium trihalide in the presence of an alcohol of the generic formula ROH where R=alkyl in at least one solvent, a process for producing them, their use for producing indium oxide-containing or (semi)conducting layers and processes for producing indium oxide-containing layers which use the formulation of the invention.

An advantageous method for treating the surface of a metallic substrate made of aluminum or an aluminum alloy, comprising the following steps: providing a water-based mixture with a sol, comprising alkoxy silanes of general chemical formula Si(OR).sub.4 and organoalkoxy silanes of general chemical formula R″Si(OR′).sub.3, in which R and R′ are linear or branched, short-chained hydrocarbon groups with at least one hydroxyl group and R″ is an organic group with a glycidoxy-, merkapto-, amino-, methacryl-, allyl- and/or vinyl-group, applying the mixture to the surface of the metallic substrate and at least in sections, hardening the mixture with a formation of a sol-gel coating connected to the metallic substrate.

Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH.sub.3).sub.x(SiH.sub.2—).sub.y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

Provided is a barrier film comprising a base layer, and an inorganic layer including Si, N, and O, and including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, wherein the film has a water vapor transmission rate of 5.0×10.sup.−4 g/m.sup.2.Math.day or less as measured under conditions of a temperature of 38° C. and 100% relative humidity after being stored at 85° C. and 85% relative humidity conditions for 250 hours, or wherein the inorganic layer has a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s. The barrier film has excellent barrier properties and optical properties and can be used for electronic products that are sensitive to moisture and the like.

A cavity (4) for a cooking appliance (2), in particular an oven cavity (4) for a domestic oven, comprising at least one cavity wall (8a, 8b, 8c, 8d) defining a cooking chamber (6) for cooking foodstuff and having an inner surface (10) facing towards the cooking chamber (6), a central opening for placing foodstuff into the cooking chamber (6), wherein the inner surface (10) is at least partially provided with a non-stick and/or non-wetting coating (16) comprising at least a first layer (18), wherein the first layer (18) is obtained by a sol-gel process from a first composition comprising a silica sol and a silane and/or wherein the cavity (4) further comprises a heat reflection shield system (26) having at least one heat reflection shield (28) to reduce the heat radiation produced by heating elements (30) being arranged within the cavity (4) against the non-stick and/or non-wetting coating (16). A cooking appliance (2), in particular a domestic oven comprising such a cavity (4) and a method for manufacturing such a cavity (4).

Crystallization of perovskite films was performed in supercritical carbon dioxide with and without organic co-solvents. Post deposition crystallization of the films was performed in a binary, single phase supercritical fluid at constant conditions (45° C., 1200 psi) but with varying organic co-solvent volume fractions up to 2%. The co-solvents can provide selective interactions with one or both of the perovskite precursor compounds resulting in different film morphologies ranging from uniform films containing large grains to films exhibiting large cubic or hexagonal crystals or preferential crystallographic orientations. The use of supercritical fluids to enhance or tune crystallization in solid-state thin films could have broad applications toward the realization of high efficiency photovoltaic devices.