The present invention relates to indium alkoxide compounds preparable by reacting an indium trihalide InX.sub.3 where X=F, Cl, Br, I with a secondary amine of the formula R′.sub.2NH where R′=alkyl, in a molar ratio of 8:1 to 20:1 in relation to the indium trihalide, in the presence of an alcohol of the generic formula ROH where R=alkyl, to a process for preparation thereof and to the use thereof for production of indium oxide-containing or (semi)conductive layers.

Provided are a compound, including metal atoms for forming metal nano particles through a simple process within a short time at a low production cost for commercial purposes, and a solution including the compound.

Embodiments of the invention include a method of initiating an optical fiber of a tip assembly to form a finished tip assembly. In some embodiments, at least a portion of a distal portion of the optical fiber is coated with an energy absorbing initiating material. In some embodiments, the initiating material is an enamel material including a mixture of brass (copper and zinc) flakes or aluminum flakes in a solution of organic solvents. After the initiating material dries, a diode laser is fired through the optical fiber. The laser energy is at least partially absorbed in the initiating material and ignites the organic solvents. This combustion melts the material of the optical fiber, and impregnates the optical fiber with the metal flakes of the initiating material. The resulting initiated optical fiber is thus permanently modified so that the energy applied through the fiber is partially absorbed and converted to heat.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A multilayer structure including a substrate and a first stack of a layer of SiO.sub.2 and a layer of material of the SiO.sub.xN.sub.yH.sub.z type positioned between the substrate and the layer of SiO.sub.2, in which the layer of SiO.sub.2 and the layer of material of the SiO.sub.xN.sub.yH.sub.z type have thicknesses (e.sub.B, e.sub.A) such that the thickness of the layer of SiO.sub.2 is less than or equal to 60 nm, the thickness of the layer of material of the SiO.sub.xN.sub.yH.sub.z type (e.sub.B) is more than twice the thickness (e.sub.A) of the layer of SiO.sub.2, and the sum of the thicknesses of the layer of SiO.sub.2 and of the layer of material of the SiO.sub.xN.sub.yH.sub.z type is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.

The present invention relates to liquid formulations which can be produced by dissolving at least one indium alkoxide compound which can be prepared by reacting an indium trihalide InX.sub.3 where X=F, Cl, Br, I with a secondary amine of the formula R′.sub.2NH where R′=alkyl in a molar ratio of from 8:1 to 20:1 to the indium trihalide in the presence of an alcohol of the generic formula ROH where R=alkyl in at least one solvent, a process for producing them, their use for producing indium oxide-containing or (semi)conducting layers and processes for producing indium oxide-containing layers which use the formulation of the invention.

A hydrogel material composition includes: (1) an alginate (or other cross-linking polymer) material; (2) an optional α-hydroxy carboxylate material; and (3) an iron cation material. The hydrogel material composition with or without the α-hydroxy-carboxylate material may be used in a photolithographic imaging application or a photorelease application within the context of a photoirradiation induced reduction/oxidation reaction of an iron (III) cation material to form an iron (II) cation material.

Systems for depositing materials and related methods are described. The systems allow condensing or depositing a precursor on a substrate, and then curing condensed or deposited precursor to form a layer.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Disclosed herein are ink compositions for making a conductive palladium structure. For example, the ink composition can comprise a palladium salt and a complex of a complexing agent and a short chain carboxylic acid or salt thereof. In some embodiments, a second or third metal salt is included in the compositions. Also disclosed herein are methods for making and using such conductive ink compositions.