A low-alloy and corrosion-resistant steel for a vehicle, may include about 0.001 wt % to about 0.1 wt % of C, about 0.01 wt % to about 0.5 wt % of Si, about 0.1 wt % to about 0.6 wt % of Mn, more than 0 wt % and about 0.18 wt % or less of P, more than 0 wt % and less than about 0.02 wt % of S, about 0.001 wt % to about 0.03 wt % of Nb, more than 0 wt % and about 0.03 wt % or less of Cr, about 0.05 wt % to about 0.3 wt % of Cu, about 0.05 wt % to about 0.2 wt % of Ni, and more than 0 wt % and about 0.2 wt % or less of a combined weight of Sn and Sb, and the balance iron and inevitable impurities.

A method of producing a hot-dip Zn alloy-plated steel sheet includes: dipping a base steel sheet in a hot-dip Zn alloy plating bath to form a hot-dip Zn alloy plating layer on a surface of the base steel sheet; and contacting an aqueous solution containing a water-soluble corrosion inhibitor with a surface of the hot-dip Zn alloy plating layer to cool the base steel sheet and the hot-dip Zn alloy plating layer having a raised temperature through formation of the hot-dip Zn alloy plating layer. A temperature of the surface of the hot-dip Zn alloy plating layer when the aqueous solution is to be contacted with the surface of the hot-dip Zn alloy plating layer is equal to or more than 100 C. and equal to or less than a solidifying point of the plating layer. The aqueous solution containing the water-soluble corrosion inhibitor satisfies the Equation [{(Z.sub.0Z.sub.1)/Z.sub.0}10020].

A method of producing a hot-dip Zn alloy-plated steel sheet includes: dipping a base steel sheet in a hot-dip Zn alloy plating bath to form a hot-dip Zn alloy plating layer on a surface of the base steel sheet; and contacting an aqueous solution containing a water-soluble corrosion inhibitor with a surface of the hot-dip Zn alloy plating layer to cool the base steel sheet and the hot-dip Zn alloy plating layer having a raised temperature through formation of the hot-dip Zn alloy plating layer. A temperature of the surface of the hot-dip Zn alloy plating layer when the aqueous solution is to be contacted with the surface of the hot-dip Zn alloy plating layer is equal to or more than 100 C. and equal to or less than a solidifying point of the plating layer. The aqueous solution containing the water-soluble corrosion inhibitor satisfies the Equation [{(Z.sub.0Z.sub.1)/Z.sub.0}10020].

An electrode for an energy storage device including a Zn layer or Zn alloy layer, a Ni layer, and a Sn layer or Sn alloy layer formed by plating on a connecting terminal part of a positive electrode composed of Al so that the resistance value at the contacting point is reduced and the voltage of the energy storage device can be effectively supplied without any drop. Accordingly, this electrode can be soldered to a Cu negative electrode, which is composed of metal that is different species from Al, through a Sn layer or a Sn alloy layer so that jointing strength of the Al positive electrode and the Cu negative electrode can be enhanced. The contacting area is increased in comparison with the conventional jointing by spot-welding or conventional fastening by a bolt so that the resistance value at the contacting point is reduced.

An electrode for an energy storage device including a Zn layer or Zn alloy layer, a Ni layer, and a Sn layer or Sn alloy layer formed by plating on a connecting terminal part of a positive electrode composed of Al so that the resistance value at the contacting point is reduced and the voltage of the energy storage device can be effectively supplied without any drop. Accordingly, this electrode can be soldered to a Cu negative electrode, which is composed of metal that is different species from Al, through a Sn layer or a Sn alloy layer so that jointing strength of the Al positive electrode and the Cu negative electrode can be enhanced. The contacting area is increased in comparison with the conventional jointing by spot-welding or conventional fastening by a bolt so that the resistance value at the contacting point is reduced.

A joining method for joining a first member and a second member is provided. The joining method includes a step of providing a first brazing layer on the first member by plating, a step of providing a second brazing layer on the first brazing layer by plating, a step of arranging the first member and the second member to oppose each other across the first brazing layer and the second brazing layer, and a step of melting the first brazing layer and the second brazing layer to join the first member and the second member which are arranged to oppose each other.

A joining method for joining a first member and a second member is provided. The joining method includes a step of providing a first brazing layer on the first member by plating, a step of providing a second brazing layer on the first brazing layer by plating, a step of arranging the first member and the second member to oppose each other across the first brazing layer and the second brazing layer, and a step of melting the first brazing layer and the second brazing layer to join the first member and the second member which are arranged to oppose each other.

There is provided a palladium plate coated material (100) comprising: a base material (10); an underlying alloy layer (20) formed on the base material (10); and a palladium plated layer (30) formed on the underlying alloy layer (20). The palladium plate coated material (100) is characterized in that the underlying alloy layer (20) is formed of an M1-M2-M3 alloy (where M1 is at least one element selected from Ni, Fe, Co, Cu, Zn and Sn, M2 is at least one element selected from Pd, Re, Pt, Rh, Ag and Ru, and M3 is at least one element selected from P and B).

There is provided a palladium plate coated material (100) comprising: a base material (10); an underlying alloy layer (20) formed on the base material (10); and a palladium plated layer (30) formed on the underlying alloy layer (20). The palladium plate coated material (100) is characterized in that the underlying alloy layer (20) is formed of an M1-M2-M3 alloy (where M1 is at least one element selected from Ni, Fe, Co, Cu, Zn and Sn, M2 is at least one element selected from Pd, Re, Pt, Rh, Ag and Ru, and M3 is at least one element selected from P and B).

A semiconductor package includes a wiring board and a semiconductor element mounted on the wiring board. The wiring board includes a first insulating material layer having a surface with an arithmetic average roughness Ra of 100 nm or less, a metal wiring provided on the surface of the first insulating material layer, and a second insulating material layer provided to cover the metal wiring. The metal wiring is configured by a metal layer in contact with the surface of the first insulating material layer and a conductive part stacked on a surface of the metal layer, and a nickel content rate of the metal layer is 0.25 to 20% by mass.