An arc-ablation resistant tungsten alloy switch contact and preparation method is disclosed. A contact member has a three-layer structure, wherein a first layer is a hydrophobic rubber layer, a second layer is a sheet metal layer, and a third layer is a tungsten alloy chemical deposition layer. A plating bath adopted in the chemical deposition contains 25-125 g/L soluble tungsten compound, 0-60 g/L soluble compound of a transition metal like ferrum, nickel, cobalt, copper or manganese, and 0-30 g/L soluble compound of tin, stibium, lead or bismuth. When a layered complex of the hydrophobic rubber layer and the sheet metal layer is chemically plated by the plating bath, a tungsten alloy plated layer is selectively deposited on a metal surface, and chemical deposition of the tungsten alloy does not occur on a surface of the hydrophobic rubber fundamentally.

An arc-ablation resistant switch contact and a preparation method thereof is disclosed. The switch contact is a complex having a plurality of layers of layered structure, wherein a first layer is a hydrophobic rubber layer, a second layer is an adhesive layer, a third layer is a sheet metal layer, a fourth layer is an adhesive layer, and a fifth layer is a metal plated layer; wherein, the fifth layer of metal plated layer is formed by dipping a complex of the first layer, the second layer, the third layer and the fourth layer in a chemical plating bath containing refractory metal elements, and depositing on surfaces of the second layer, the third layer and the fourth layer in the complex by a chemical deposition method.

A plating apparatus can suppress a time period during which a plating liquid is used in a plating from being reduced. In the plating apparatus 1, after a plating liquid supply unit 53 supplies, to a substrate W1, a plating liquid which exerts a preset plating performance within a preset concentration range and which has an initial temperature adjusted to be lower than a preset plating temperature; and an initial concentration adjusted such that a concentration of the plating liquid at a moment when a temperature of the plating liquid has reached the preset plating temperature is equal to or higher than a lower limit of the preset concentration range and equal to or below a median value of the preset concentration range, a plating liquid heating unit 63 heats the plating liquid supplied to the substrate W1 to the preset plating temperature.

A plating apparatus can suppress a time period during which a plating liquid is used in a plating from being reduced. In the plating apparatus 1, after a plating liquid supply unit 53 supplies, to a substrate W1, a plating liquid which exerts a preset plating performance within a preset concentration range and which has an initial temperature adjusted to be lower than a preset plating temperature; and an initial concentration adjusted such that a concentration of the plating liquid at a moment when a temperature of the plating liquid has reached the preset plating temperature is equal to or higher than a lower limit of the preset concentration range and equal to or below a median value of the preset concentration range, a plating liquid heating unit 63 heats the plating liquid supplied to the substrate W1 to the preset plating temperature.

The present invention relates to a method for direct metallization of non-conductive substrates as well as a conductor solution used in such a method. According to the invention, it is proposed to contact a non-conductive substrate surface after activation by a noble metal colloid-containing activator solution with a conductor solution, which comprises a metal that is reducible by a metal of the activator solution, a complexing agent and a reducing agent.

The present invention relates to a method for direct metallization of non-conductive substrates as well as a conductor solution used in such a method. According to the invention, it is proposed to contact a non-conductive substrate surface after activation by a noble metal colloid-containing activator solution with a conductor solution, which comprises a metal that is reducible by a metal of the activator solution, a complexing agent and a reducing agent.

A lubricating oil line of a gas turbine or a turbocharger includes a flow path component which allows passage of a lubricating oil. The flow path component used in the gas turbine includes a sump chamber and a vent line. A surface of the flow path component, which is exposed to a temperature approximately from 300 to 450 C. and comes into contact with the lubricating oil, is covered with a coating that includes nickel or a nickel-phosphorus alloy, and particles made of polytetrafluoroethylene.

A solution for providing electroless deposition of a metal layer on a substrate is provided. A solvent is provided. A metal precursor is provided to the solvent. A first borane containing reducing agent is provided to the solvent. A second borane containing reducing agent is provided to the solvent, wherein the first borane containing reducing agent has a deposition rate of at least five times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents.

Coatings for magnetic materials, such as rare earth magnets, are described. The coatings are designed to reduce or prevent the release of one or both of nickel and cobalt from the coatings or from the underlying magnetic material. The coatings are designed to resist corrosion and release of nickel and cobalt when exposed to moist conditions. The coatings are also designed to be robust enough to withstand damage due to scratch forces. In some embodiments, the coatings include multiple layers of one or of metal and non-metal materials. The coated magnets are well suited for use in the manufacture of wearable consumer products.

A solution for providing electroless deposition of a metal layer on a substrate is provided. A solvent is provided. A metal precursor is provided to the solvent. A first borane containing reducing agent is provided to the solvent. A second borane containing reducing agent is provided to the solvent, wherein the first borane containing reducing agent has a deposition rate of at least five times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents.