Tooling apparatus and methods are provided to fabricate semiconductor devices in which controlled thermal annealing techniques are utilized to modulate microstructures of metallic interconnect structures. For example, an apparatus includes a single platform semiconductor processing chamber having first and second sub-chambers. The first sub-chamber is configured to receive a semiconductor substrate comprising a metallization layer formed on a dielectric layer, wherein a portion of the metallization layer is disposed within an opening etched in the dielectric layer, and to form a stress control layer on the metallization layer. The second sub-chamber comprises a programmable hot plate which is configured to perform a thermal anneal process to modulate a microstructure of the metallization layer while the stress control layer is disposed on the metallization layer, and without an air break between the process modules of forming the stress control layer and performing the thermal anneal process.

The present invention relates to a fuel hose made from a metal-plated elastomer and to a method for its manufacturing.

A substrate processing method includes preparing a substrate, removing at least a part of a first metal layer, and precipitating a second metal layer. In the preparing of the substrate, the substrate having the first metal layer formed on a front surface thereof is prepared. In the removing of at least the part of the first metal layer, at least the part of the first metal layer formed on a peripheral portion of the substrate is removed. In the precipitating of the second metal layer, the second metal layer is precipitated on the front surface of the substrate by using the first metal layer as a catalyst after the removing of at least the part of the first metal layer.

A substrate processing method includes preparing a substrate, removing at least a part of a first metal layer, and precipitating a second metal layer. In the preparing of the substrate, the substrate having the first metal layer formed on a front surface thereof is prepared. In the removing of at least the part of the first metal layer, at least the part of the first metal layer formed on a peripheral portion of the substrate is removed. In the precipitating of the second metal layer, the second metal layer is precipitated on the front surface of the substrate by using the first metal layer as a catalyst after the removing of at least the part of the first metal layer.

A method is provided for manufacturing an engine component. During this method, a preform engine component is provided that includes a substrate. The substrate includes a substrate surface and a plurality of apertures. Each of the apertures projects partially into the substrate from the substrate surface. A coating is formed on the substrate. The coating includes a base and a plurality of projections. The base covers the substrate surface. Each of the projections projects out from the base into and fills a respective one of the apertures. The forming of the coating includes electroless plating a coating material onto the substrate over the substrate surface and within the apertures.

A method is provided for manufacturing an engine component. During this method, a preform engine component is provided that includes a substrate. The substrate includes a substrate surface and a plurality of apertures. Each of the apertures projects partially into the substrate from the substrate surface. A coating is formed on the substrate. The coating includes a base and a plurality of projections. The base covers the substrate surface. Each of the projections projects out from the base into and fills a respective one of the apertures. The forming of the coating includes electroless plating a coating material onto the substrate over the substrate surface and within the apertures.

Tooling apparatus and methods are provided to fabricate semiconductor devices in which controlled thermal annealing techniques are utilized to modulate microstructures of metallic interconnect structures. For example, an apparatus includes a single platform semiconductor processing chamber having first and second sub-chambers. The first sub-chamber is configured to receive a semiconductor substrate comprising a metallization layer formed on a dielectric layer, wherein a portion of the metallization layer is disposed within an opening etched in the dielectric layer, and to form a stress control layer on the metallization layer. The second sub-chamber comprises a programmable hot plate which is configured to perform a thermal anneal process to modulate a microstructure of the metallization layer while the stress control layer is disposed on the metallization layer, and without an air break between the process modules of forming the stress control layer and performing the thermal anneal process.

The present invention relates to a process for obtaining a multilayer composition, to a composition obtainable via such method and to an article comprising said composition. The process comprises at least the following: i. providing a polymeric layer (L1) comprising an aromatic polymer selected from the group consisting of poly(aryl ether sulfone) polymer (P1) and a polyarylene sulphide (P2), and having at least one surface (S1); ii. treating at least the surface (S1) of (L1) with a radio-frequency glow N discharge process in the presence of an etching gas medium comprising a nitrogen-containing gas to obtained an etched surface (52); iii. optionally, contacting the etched surface (S2) obtained in step ii. with a composition (LC3) comprising a surfactant to obtain at least a pre-treated surface (S2a); iv. contacting the etched surface (S2) obtained in step ii. or the pre-treated surface (S2a) obtained in step iii. with a liquid composition (LC1) comprising at least a metal (MC) in ionic form and having a pH not less than 9.0, so as to provide an article having at least one surface (S-3) treated with a composition containing metal (MC) in ionic form; v. reducing metal (MC) in ionic form on (S-3) to its metallic form by contacting (S-3) with a liquid composition (LC2) containing a reducing agent; vi. forming by electroless deposition a layer (L2) onto the at least one treated surface obtained in step v., said layer (L2) comprising at least one metal compound (M1) and metal (MC) in ionic form; vii. applying an additional layer (L3) comprising a metal (M2), equal to or different from (M1), directly on layer (L2); and, optionally, viii. applying an additional layer (L4) of a metal (M2) on (L3).

A method for the production of metal-plated articles, including the step of depositing an electrically-conductive metallic layer on a surface of an article comprising a polymer composition comprising by weight: a) 40-60% of a propylene homopolymer, or propylene copolymer containing up to 5% by weight of ethylene and/or another C.sub.4-C.sub.10 ?-olefin, and having a melting temperature of 155? C. or higher and/or a fraction soluble in xylene at 25? C. of 10% by weight or less; b) 10-20% of an ethylene-based elastoplastic copolymer, optionally, a copolymer of ethylene with C.sub.4-C.sub.10 ?-olefin; c) 2-6% of a styrene block copolymer; d) optionally, up to 3% of a propylene homopolymer having a Melt Flow Rate (230? C./2.16 kg) of 500 g/10 min. or more; e) 15-50% of a filler; and f) optionally, up to 6% of a color pigment.

A wiring board includes a substrate, conductive pads and at least one protective layer group. The conductive pads are disposed on the substrate. The at least one protective layer group is disposed on a side of the conductive pads away from the substrate; a protective layer group includes an oxidation protective layer and a palladium alloy layer that are stacked, and the oxidation protective layer is closer to the substrate than the palladium alloy layer. A material of the oxidation protective layer includes a nickel-based alloy.