C23F1/04

Metal mask base, metal mask and method for producing metal mask

A metal mask substrate includes a metal obverse surface configured such that a resist is placed on the obverse surface. The obverse surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 m. The obverse surface also has a three-dimensional surface roughness Sz of less than or equal to 3.17 m.

Metal plate for deposition mask, and deposition mask and manufacturing method therefor

A metal plate to be used in the manufacture of a deposition mask comprises: a base metal plate; and a surface layer disposed on the base metal plate, wherein the surface layer includes elements different from those of the base metal plate, or has a composition ratio different from that of the base metal plate, and an etching rate of the base metal plate is greater than the etching rate of the surface layer. An embodiment includes a manufacturing method for a deposition mask having an etching factor greater than or equal to 2.5. The deposition mask of the embodiment includes a deposition pattern region and a non-deposition region, the deposition pattern region includes a plurality of through-holes, the deposition pattern region is divided into an effective region, a peripheral region, and a non-effective region, and through-holes can be formed in the effective region and the peripheral region.

METAL PLATE FOR DEPOSITION MASK, AND DEPOSITION MASK AND MANUFACTURING METHOD THEREFOR

A metal plate to be used in the manufacture of a deposition mask comprises: a base metal plate; and a surface layer disposed on the base metal plate, wherein the surface layer includes elements different from those of the base metal plate, or has a composition ratio different from that of the base metal plate, and an etching rate of the base metal plate is greater than the etching rate of the surface layer. An embodiment includes a manufacturing method for a deposition mask having an etching factor greater than or equal to 2.5. The deposition mask of the embodiment includes a deposition pattern region and a non-deposition region, the deposition pattern region includes a plurality of through-holes, the deposition pattern region is divided into an effective region, a peripheral region, and a non-effective region, and through-holes can be formed in the effective region and the peripheral region.

COBALT CHROME ETCHING PROCESS
20200190671 · 2020-06-18 · ·

Compositions and methods for etching cobalt chromium alloys are disclosed. The compositions generally include at least two mineral acids, certain component metals of the alloy to be etched, and optionally iron (Fe). For example, when etching a cobalt chromium molybdenum alloy, the metals may include chromium (Cr), molybdenum (Mo), and optionally, cobalt (Co). The at least two mineral acids may include hydrochloric acid (HCl), nitric acid (HNO.sub.3), and hydrofluoric acid (HF). The methods provide for etching an entire surface of a substrate or etching a surface of a substrate in a pattern using selective coating patterns and/or coating removal. Thus, unlimited patterns, as well as etch depths and variations in etch depths are achievable using the compositions and methods disclosed.

METAL PLATE, METHOD OF MANUFACTURING METAL PLATE, AND METHOD OF MANUFACTURING MASK BY USING METAL PLATE
20200185607 · 2020-06-11 · ·

A metal plate for manufacturing a deposition mask with reduced variation in dimension of through-holes; wherein an average value of plate thicknesses of the metal plate in a longitudinal direction is within a 3% range around a predetermined value. When an average value of the plate thicknesses of the metal plate in the longitudinal direction is represented as A, and a value obtained by multiplying a standard deviation of the plate thicknesses of the metal plate in the longitudinal direction by 3 is represented as B, (B/A)100(%) is 5%. When a value obtained by multiplying a standard deviation of the plate thicknesses of the metal plate in the width direction by 3 is represented as C, and a value of a plate thickness of the metal plate at a central portion in the width direction is represented as X, (C/X)100(%) is 3%.

NEEDLE WITH ROUNDED EDGE

A chemically etched needle is provided herein. The chemically etched needle includes a metal base having a first side and a second side. The chemically etched needle also includes a chemically etched blade at one end of the metal base and formed at an intersection of a distal diverging surface and a proximal diverging surface, at least one of the diverging surfaces slopes inward towards the second side.

NEEDLE WITH ROUNDED EDGE

A chemically etched needle is provided herein. The chemically etched needle includes a metal base having a first side and a second side. The chemically etched needle also includes a chemically etched blade at one end of the metal base and formed at an intersection of a distal diverging surface and a proximal diverging surface, at least one of the diverging surfaces slopes inward towards the second side.

METHOD AND DEVICE FOR ETCHING PATTERNS INSIDE OBJECTS

Systems and methods for etching complex patterns on an interior surface of a hollow object are disclosed. A method generally includes positioning a laser system within the hollow object with a focal point of the laser focused on the interior surface, and operating the laser system to form the complex pattern on the interior surface. Motion of the laser system and the hollow object is controlled by a motion control system configured to provide rotation and/or translation about a longitudinal axis of one or both of the hollow object and the laser system based on the complex pattern, and change a positional relationship between a reflector and a focusing lens of the laser system to accommodate a change in distance between the reflector and the interior surface of the hollow object.

METHOD AND DEVICE FOR ETCHING PATTERNS INSIDE OBJECTS

Systems and methods for etching complex patterns on an interior surface of a hollow object are disclosed. A method generally includes positioning a laser system within the hollow object with a focal point of the laser focused on the interior surface, and operating the laser system to form the complex pattern on the interior surface. Motion of the laser system and the hollow object is controlled by a motion control system configured to provide rotation and/or translation about a longitudinal axis of one or both of the hollow object and the laser system based on the complex pattern, and change a positional relationship between a reflector and a focusing lens of the laser system to accommodate a change in distance between the reflector and the interior surface of the hollow object.

Methods for creating fluidic cavities by transmembrane etching through porous membranes and structures made thereby and uses of such structures

Provided are monolithic structures comprising one or more suspended, nanoporous membranes that are in contact with one or more fluidic cavities, methods of making same, and exemplary uses of same. The monolithic structures can be formed using a transmembrane etch. The monolithic structures can be used, as examples, as filters and filtration modules in microfluidic devices, dialysis devices, and concentration devices in laboratory, industrial, and medical processes.