C23F1/14

Metal mask plate and fabrication method thereof

A metal mask plate and a fabrication method thereof. The metal mask plate has a first main surface and a second main surface opposite to each other, the metal mask plate includes: a plurality of panel-defining regions spaced apart; and a main frame portion. In each of the panel-defining regions, a plurality of via holes configured for defining a pixel structure are arranged in a matrix, and each of the via holes communicates the first main surface and the second main surface of the metal mask plate, side walls of every two adjacent via holes are directly connected with each other on the second main surface of the metal mask plate so that the metal mask plate between the two adjacent via holes (101) in the panel-defining region has a thickness D1. The main frame portion of the metal mask plate has a second thickness D2, and the first thickness D1 and the second thickness D2 satisfy |D1D2|/D120%. Thus, a wrinkle and deformation caused by the difference of the thicknesses during unfolding can be effectively avoid, so as to further effectively improve quality of the OLED display product fabricated by adopting the fine metal mask plate.

Graphene production using plasma-enhanced chemical vapor deposition

A method of growing graphene at low temperature on a substrate. The method includes placing a substrate with a layer of cobalt deposited thereon in a plasma enhanced chemical vapor deposition (PECVD) chamber, providing a carbon precursor gas to the PECVD chamber, generating plasma at between about 350 C. and about 800 C. to decompose the carbon precursor gas to thereby deposit carbon atoms on the cobalt layer and enabling a plurality of the carbon atoms to diffuse through the cobalt layer thereby growing graphene on top of the cobalt layer and in between the substrate and the cobalt layer, removing carbon atoms from top of the cobalt layer, and removing the cobalt layer.

Graphene production using plasma-enhanced chemical vapor deposition

A method of growing graphene at low temperature on a substrate. The method includes placing a substrate with a layer of cobalt deposited thereon in a plasma enhanced chemical vapor deposition (PECVD) chamber, providing a carbon precursor gas to the PECVD chamber, generating plasma at between about 350 C. and about 800 C. to decompose the carbon precursor gas to thereby deposit carbon atoms on the cobalt layer and enabling a plurality of the carbon atoms to diffuse through the cobalt layer thereby growing graphene on top of the cobalt layer and in between the substrate and the cobalt layer, removing carbon atoms from top of the cobalt layer, and removing the cobalt layer.

Copper etchant composition
10577696 · 2020-03-03 · ·

Provided is a copper etchant composition including: a first organic acid containing one or more amine groups, and one or more carboxylic acid groups; a second organic acid; an amine compound; hydrogen peroxide; and a phosphate compound, which has the increased number of processing sheets and etching uniformity, when etching copper.

Copper etchant composition
10577696 · 2020-03-03 · ·

Provided is a copper etchant composition including: a first organic acid containing one or more amine groups, and one or more carboxylic acid groups; a second organic acid; an amine compound; hydrogen peroxide; and a phosphate compound, which has the increased number of processing sheets and etching uniformity, when etching copper.

Orthopaedic surgical instrument assembly and method of manufacturing same

An orthopaedic surgical instrument assembly includes a hemispherical component having a convex outer surface extending from a circular rim to an apex point, and a plurality of cutting teeth extending outwardly from the outer surface between the circular rim and the apex point. Each cutting tooth of the plurality of cutting teeth includes an elongated cutting edge that is positioned on an arced imaginary line of a plurality of arced imaginary lines extending outwardly from the apex point of the hemispherical component. A method of manufacturing an orthopaedic surgical instrument assembly is also disclosed.

Orthopaedic surgical instrument assembly and method of manufacturing same

An orthopaedic surgical instrument assembly includes a hemispherical component having a convex outer surface extending from a circular rim to an apex point, and a plurality of cutting teeth extending outwardly from the outer surface between the circular rim and the apex point. Each cutting tooth of the plurality of cutting teeth includes an elongated cutting edge that is positioned on an arced imaginary line of a plurality of arced imaginary lines extending outwardly from the apex point of the hemispherical component. A method of manufacturing an orthopaedic surgical instrument assembly is also disclosed.

ETCHING LIQUID COMPOSITION AND ETCHING METHOD
20200010762 · 2020-01-09 · ·

An etching method that includes using the etching liquid composition containing (A) 0.1 to 15 mass % of hydrogen peroxide, (B) 0.01 to 1 mass % of a fluoride ion source, (C) 2-hydroxyethane sulfonic acid or a salt thereof in an amount of 0.1 to 20 mass % in terms of organic sulfonic acid, (D) 0.01 to 5 mass % of at least one compound selected from the group consisting of azole-based compounds and compounds having a structure that has a 6-membered heterocycle including at least one nitrogen atom and three double bonds, and (E) water, is provided.

Enhanced etch anisotropy using nanoparticles as banking agents in the presence or absence of a magnetic or electrical field

A method of anisotropic etching comprises forming a metal layer above a substrate. A mask layer is formed on the metal layer with openings defined in the mask layer to expose portions of the metal layer. The exposed portions of the metal layer are introduced to an active etchant solution that includes nanoparticles as an insoluble banking agent. In further embodiments, the exposed portions of the metal layer are introduced to a magnetic and/or an electrical field.

Enhanced etch anisotropy using nanoparticles as banking agents in the presence or absence of a magnetic or electrical field

A method of anisotropic etching comprises forming a metal layer above a substrate. A mask layer is formed on the metal layer with openings defined in the mask layer to expose portions of the metal layer. The exposed portions of the metal layer are introduced to an active etchant solution that includes nanoparticles as an insoluble banking agent. In further embodiments, the exposed portions of the metal layer are introduced to a magnetic and/or an electrical field.