The method of the present invention is capable of polishing a high hardness work at high polishing efficiency. The method comprises the steps of: pressing a surface of the work onto a polishing part of a rotating polishing plate; and supplying slurry while performing the pressing step. The method is characterized in that an activated gas, which has been activated by gas discharge, is turned into bubbles and mixed into the slurry.

The method of the present invention is capable of polishing a high hardness work at high polishing efficiency. The method comprises the steps of: pressing a surface of the work onto a polishing part of a rotating polishing plate; and supplying slurry while performing the pressing step. The method is characterized in that an activated gas, which has been activated by gas discharge, is turned into bubbles and mixed into the slurry.

Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.

Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.

An etching solution composition of this disclosure contains hydrogen peroxide, an etching inhibitor, a chelating agent, an etching additive, fluorides, a stabilizer, and water. Etching uniformity is increased by adjusting a mass proportion of each component in the etching solution composition, so as to avoid loss of properties such as etching tapered angles, etching deviation, and etching straightness, thereby enhancing product quality.

A flexible touch sensing unit may include a substrate including an active touch region and an inactive region surrounding the active touch region, a plurality of first sensing electrodes disposed on the active touch region and extending along a first direction, a plurality of second sensing electrodes disposed on the active touch region and extending along a second direction, and a plurality of sensing lines disposed on the inactive region and electrically connected to the first sensing electrodes and the second sensing electrodes. Each of the sensing lines may include a first metal layer, a first conductive layer disposed on the first metal layer, and a second metal layer disposed on the first conductive layer. Each of the first sensing electrodes may include a third metal layer, and each of the second sensing electrodes may include a fourth metal layer. The first conductive layer may include a self-assembled monolayer.

A flexible touch sensing unit may include a substrate including an active touch region and an inactive region surrounding the active touch region, a plurality of first sensing electrodes disposed on the active touch region and extending along a first direction, a plurality of second sensing electrodes disposed on the active touch region and extending along a second direction, and a plurality of sensing lines disposed on the inactive region and electrically connected to the first sensing electrodes and the second sensing electrodes. Each of the sensing lines may include a first metal layer, a first conductive layer disposed on the first metal layer, and a second metal layer disposed on the first conductive layer. Each of the first sensing electrodes may include a third metal layer, and each of the second sensing electrodes may include a fourth metal layer. The first conductive layer may include a self-assembled monolayer.

Example embodiments relate to a nanostructure including a conductive region and a nonconductive region, wherein the conductive region includes at least one first nanowire, and the nonconductive region includes at least one second nanowire that is at least partially sectioned, a method of preparing the nanostructure, and a panel unit including the nanostructure.

Example embodiments relate to a nanostructure including a conductive region and a nonconductive region, wherein the conductive region includes at least one first nanowire, and the nonconductive region includes at least one second nanowire that is at least partially sectioned, a method of preparing the nanostructure, and a panel unit including the nanostructure.

An aqueous solution for surface treatment, for treating a surface of an alloy, the aqueous solution comprising: a copper compound at a copper ion concentration of 20000 ppm or more and 50000 ppm or less; a heterocyclic nitrogen compound at a concentration of 200 ppm or more and 3000 ppm or less; and a halide ion at a concentration of 2000 ppm or more and 70000 ppm or less.