Patent classifications
C23F1/14
Methods of reducing the adhesion of a maskant
A method for reducing adhesion between a maskant and a substrate, wherein the maskant is adhered to a surface of the substrate, the method comprising applying a composition to the maskant.
METHOD FOR TREATING GRAPHENE SHEETS FOR LARGE-SCALE TRANSFER USING FREE-FLOAT METHOD
A method for transferring a graphene sheet from a copper substrate to a functional substrate includes forming the graphene sheet on the copper substrate using chemical vapor deposition, and irradiating the graphene sheet disposed on the copper substrate with a plurality of xenon ions using broad beam irradiation to form a prepared graphene sheet. The prepared graphene sheet is resistant to forming unintentional defects induced during transfer of the prepared graphene sheet to the functional substrate. The method further includes removing the copper substrate from the prepared graphene sheet using an etchant bath, floating the prepared graphene sheet in a floating bath, submerging the functional substrate in the floating bath, and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
Etching solution, additive, and etching method
According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.
Etching solution, additive, and etching method
According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.
METHOD FOR MANUFACTURING RUTHENIUM WIRING
A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.
Touch screen sensor
A touch screen sensor includes a visible light transparent substrate and an electrically conductive micropattern disposed on or in the visible light transparent substrate. The micropattern includes a first region micropattern within a touch sensing area and a second region micropattern. The first region micropattern has a first sheet resistance value in a first direction, is visible light transparent, and has at least 90% open area. The second region micropattern has a second sheet resistance value in the first direction. The first sheet resistance value is different from the second sheet resistance value.
Touch screen sensor
A touch screen sensor includes a visible light transparent substrate and an electrically conductive micropattern disposed on or in the visible light transparent substrate. The micropattern includes a first region micropattern within a touch sensing area and a second region micropattern. The first region micropattern has a first sheet resistance value in a first direction, is visible light transparent, and has at least 90% open area. The second region micropattern has a second sheet resistance value in the first direction. The first sheet resistance value is different from the second sheet resistance value.
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING LIQUID
In one embodiment, a substrate processing liquid contains phosphoric acid as a primary component and contains water and ketone. In another embodiment, a substrate processing method includes processing a substrate in a substrate processing bath with a substrate processing liquid containing phosphoric acid, water and ketone. The method further includes discharging the substrate processing liquid from the substrate processing bath to a circulating flow channel, heating the substrate processing liquid flowing through the circulating flow channel at a temperature between 50° C. and 90° C., and supplying the substrate processing liquid again from the circulating flow channel to the substrate processing bath to circulate the substrate processing liquid under heating.
Polishing composition containing cationic polymer additive
The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon oxide layer, with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 75 nm to about 200 nm, and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. % a functionalized heterocycle, a cationic polymer selected from a quaternary amine, is cationic polyvinyl alcohol, and a cationic cellulose, optionally a carboxylic acid, a pH-adjusting agent, and an aqueous carrier, and have a pH of about 1 to about 6.
Polishing composition containing cationic polymer additive
The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon oxide layer, with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 75 nm to about 200 nm, and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. % a functionalized heterocycle, a cationic polymer selected from a quaternary amine, is cationic polyvinyl alcohol, and a cationic cellulose, optionally a carboxylic acid, a pH-adjusting agent, and an aqueous carrier, and have a pH of about 1 to about 6.