Described are chemical mechanical polishing compositions and methods of using the compositions for planarizing a surface of a substrate that contains tungsten, the compositions containing silica abrasive particles and cationic surfactant.

Provided are a high-plasticity dual-phase high-entropy alloy (HEA) and a preparation method thereof. The high-plasticity dual-phase HEA has a chemical formula as shown in Formula I: (FeCoNiCr).sub.100-xTi.sub.x (Formula I), in which, x is in a range of 2.0 to 2.8. A method for preparing the high-plasticity dual-phase HEA is also provided.

A polishing slurry for tungsten and a substrate polishing method are disclosed. The polishing slurry includes an abrasive for performing polishing and having positive zeta potential, and a potential modulator for promoting the oxidation of the tungsten and for controlling the zeta potential of the abrasive.

A polishing slurry for tungsten and a substrate polishing method are disclosed. The polishing slurry includes an abrasive for performing polishing and having positive zeta potential, and a potential modulator for promoting the oxidation of the tungsten and for controlling the zeta potential of the abrasive.

This invention provides a polishing composition with which high-rate polishing is possible in an application where an object formed of a hard material is polished and also a method for producing a hard material, using the polishing composition. The polishing composition provided by this invention is characterized by that an abrasive formed of titanium diboride is dispersed in a dispersing medium. The hard material production method provided by this invention comprises a step of polishing a hard material surface with the polishing composition.

A polishing slurry composition is provided. The polishing slurry composition includes at least two types of abrasive particles among first abrasive particles, second abrasive particles, and third abrasive particles, and an oxidizer. A peak-to-valley roughness Rpv decreases when a contact area between the abrasive particles and a tungsten-containing film increases.

A slurry composition for polishing tungsten is provided. The slurry composition for polishing tungsten may include a water-soluble polymer, abrasive particles and an etching adjuster.

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an iron containing accelerator, and a cationic polymer having an amino acid monomer. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above-described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an iron containing accelerator, and a cationic polymer having an amino acid monomer. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above-described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Cobalt barrier Chemical Mechanical Planarization (CMP) compositions, systems and methods are provided for the removal of cobalt or a cobalt alloy from the surface of a semiconductor device during its manufacture. The compositions use suitable chemical additives selected from the group consisting of an aliphatic organic carboxylic acid, an aromatic organic carboxylic acid, and combinations thereof; abrasives; an oxidizing agent; and an corrosion inhibitor; to provide tunable cobalt film removal rates, tunable selectivity between cobalt and dielectric or other barrier films, and maintain very low static etching rates on cobalt film.