C23G1/10

Method of manufacturing sputtering target and sputtering target

The manufacturing cost of a sputtering target is reduced and the impurity concentration of the manufactured sputtering target is also reduced. A method of manufacturing a sputtering target includes: surface-treating at least one of a used sputtering target and a scrap material; melting at least one of the used sputtering target and the scrap material after the surface treatment to form an ingot; and manufacturing a sputtering target by subjecting the ingot to forging, rolling, heat treating, and machining.

METHODS FOR REFURBISHING AEROSPACE COMPONENTS

Embodiments of the present disclosure generally relate to methods for refurbishing aerospace components by removing corrosion and depositing protective coatings. In one or more embodiments, a method of refurbishing an aerospace component includes exposing the aerospace component containing corrosion to an aqueous cleaning solution. The aerospace component contains a nickel superalloy, an aluminide layer disposed on the nickel superalloy, and an aluminum oxide layer disposed on the aluminide layer. The method includes removing the corrosion from a portion of the aluminum oxide layer with the aqueous cleaning solution to reveal the aluminum oxide layer, then exposing the aluminum oxide layer to a post-rinse, and forming a protective coating on the aluminum oxide layer.

METHODS FOR REFURBISHING AEROSPACE COMPONENTS

Embodiments of the present disclosure generally relate to methods for refurbishing aerospace components by removing corrosion and depositing protective coatings. In one or more embodiments, a method of refurbishing an aerospace component includes exposing the aerospace component containing corrosion to an aqueous cleaning solution. The aerospace component contains a nickel superalloy, an aluminide layer disposed on the nickel superalloy, and an aluminum oxide layer disposed on the aluminide layer. The method includes removing the corrosion from a portion of the aluminum oxide layer with the aqueous cleaning solution to reveal the aluminum oxide layer, then exposing the aluminum oxide layer to a post-rinse, and forming a protective coating on the aluminum oxide layer.

METHOD FOR THE TREATMENT OF A METAL SUBSTRATE FOR THE PREPARATION OF ELECTRODES
20230151503 · 2023-05-18 ·

A method for surface treatment of a metal substrate, suitable for use as electrode support in electrochemical processes by: (a) immersion of the metal substrate and of at least one counter electrode in an electrolyte selected from hydrochloric acid, nitric acid, boric acid or sulfuric acid at a weight concentration of between 10-40%; (b) application of an anodic current density to the metal substrate of between 0.1 and 30 A/dm.sup.2 for a time of between 0.5 and 120 minutes. An electrode for gas evolution in electrochemical processes obtained from a correspondingly treated substrate.

TREATMENT LIQUID AND METHOD FOR TREATING OBJECT TO BE TREATED
20220282182 · 2022-09-08 · ·

The present invention provides a treatment liquid that exhibits excellent washing properties and improves the smoothness of an object to be treated in a case where the treatment liquid is used for treating an object to be treated containing a cobalt-containing substance. The present invention also provides a method for treating an object to be treated. The treatment liquid according to an embodiment of the present invention contains water, hydroxylamine, and three kinds of first anions consisting of Cl.sup.−, NO.sub.2.sup.−, and NO.sub.3.sup.−, in which a total content of the first anions is 0.0001 to 30 parts by mass with respect to 100 parts by mass of the hydroxylamine.

Chemical decontamination method using chelate free chemical decontamination reagent for removal of the dense radioactive oxide layer on the metal surface

A chemical decontamination reagent containing a reducing agent, a reductive metal ion, and an inorganic acid is provided to remove a radioactive oxide layer on a metal surface. The reagent can dissolve the radioactive oxide layer on the metal surface effectively at a relatively low temperature and enables a simple process of contacting the reagent to the radioactive oxide, thus economically effective in terms of cost and time required for the process. Since the decontamination does not use a conventional organic chelating agent such as oxalic acid, but the reducing agent as a main substance, the residuals of the reducing agent remained after decontamination can be decomposed and removed with an oxidizing agent. Due to the easy decomposition with the chemical decontamination reagent, secondary wastes can be minimized and the radionuclides remained in the decontamination reagent solution can be removed effectively.

Chemical decontamination method using chelate free chemical decontamination reagent for removal of the dense radioactive oxide layer on the metal surface

A chemical decontamination reagent containing a reducing agent, a reductive metal ion, and an inorganic acid is provided to remove a radioactive oxide layer on a metal surface. The reagent can dissolve the radioactive oxide layer on the metal surface effectively at a relatively low temperature and enables a simple process of contacting the reagent to the radioactive oxide, thus economically effective in terms of cost and time required for the process. Since the decontamination does not use a conventional organic chelating agent such as oxalic acid, but the reducing agent as a main substance, the residuals of the reducing agent remained after decontamination can be decomposed and removed with an oxidizing agent. Due to the easy decomposition with the chemical decontamination reagent, secondary wastes can be minimized and the radionuclides remained in the decontamination reagent solution can be removed effectively.

Method for manufacturing circuit board

A method for manufacturing the circuit board comprises following steps of forming a silver layer on each of two opposite surfaces of an insulating substrate, and forming a copper layer on each silver layer, thereby obtaining a middle structure; defining at least one through-hole on the middle structure, and each through-hole extending through each copper layer; forming a copper wiring layer on the copper layers to cover each through-hole and a portion region of the copper layers, the copper wiring layer comprising a copper conductive structure passing through each through-hole, the copper conductive structure connecting the copper layers; removing the copper layers not covered by the copper wiring layer; and etching the silver layers to form a silver wiring layer corresponding to the copper wiring layer, wherein a first etching liquid, which does not etch the copper wiring layer, is used for etching the silver layers.

Galvanized Member
20210285082 · 2021-09-16 ·

The galvanized member includes a member formed of a metal and a hot-dip galvanized layer formed on the surface of the member. The hot-dip galvanized layer contains a sulfate salt having a higher water solubility than calcium sulfate. A sulfate salt content of the hot-dip galvanized layer is preferably 0.008 to 0.133 mol based on 100 g of zinc. The sulfate salt contained in the hot-dip galvanized layer is preferably at least one of potassium sulfate, sodium sulfate, magnesium sulfate, calcium sulfate, ferric sulfate, ferrous sulfate, lithium sulfate, calcium sulfate, and aluminum sulfate.

A METHOD FOR INCREASING ADHESION STRENGTH BETWEEN A SURFACE OF COPPER OR COPPER ALLOY AND AN ORGANIC LAYER

The present invention relates to a method for increasing adhesion strength between a surface of copper or copper alloy and an organic layer, the method comprising in this order the steps: (i) providing a non-conductive substrate comprising on at least one side said surface, said surface having a total surface area of copper or copper alloy, (ii) contacting said substrate comprising said surface with an acidic aqueous non-etching protector solution comprising (ii-a) one or more than one amino azole, (ii-b) one or more than one organic acid and/or salts thereof, (ii-c) one or more than one peroxide in a total amount of 0.4 wt-% or less, based on the total weight of the protector solution, and (ii-d) inorganic acids in a total amount of 0 to 0.01 wt-%, based on the total weight of the protector solution, wherein during step (ii) the total surface area of said surface is not increased upon contacting with the protector solution.