Embodiments of the present disclosure provide a surface treatment composition and methods for using same. The composition for removing contaminants from a metallic surface, can include 3 wt % to 40 wt % of at least one bifunctional alkaline compound, 0.03 wt % to 10 wt % of at least one oxidizer comprising a metal salt, and water, where all weight percentages are based on the total weight of the composition.

Embodiments of the present disclosure provide a surface treatment composition and methods for using same. The composition for removing contaminants from a metallic surface, can include 3 wt % to 40 wt % of at least one bifunctional alkaline compound, 0.03 wt % to 10 wt % of at least one oxidizer comprising a metal salt, and water, where all weight percentages are based on the total weight of the composition.

Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

A brass-plated steel cord 1A is immersed in an organic solvent 13. The steel cord that was immersed in the organic solvent 13 is immersed in an aqueous alkaline solution 22. Next, the steel cord 1A that was immersed in the aqueous alkaline solution 22 is immersed in an aqueous silane coupling solution 32. Finally, the steel cord 1A that was immersed in the aqueous silane coupling solution 32 is heated. Thus is manufactured a steel cord 1B equipped with the silane coupling agent, wherein the silane coupling agent is excellently bonded to the surface.

The invention relates to a solution for etching titanium based materials, comprising from about 27 w % to about 39 w % hydrogen peroxide, from about 0.2 w % to about 0.5 w % potassium hydroxide, and at about 0.002 w % to about 0.02 w % 1,2-Diaminocyclohexane-N,N,N,N Tetra acetic Acid (CDTA), the rest being water, said solution comprising no corrosion inhibitor, and said solution having a pH comprised between about 7 and about 8. The invention further relates to a chemical composition for preparing such a solution by mixing said composition with concentrated hydrogen peroxide, said chemical composition comprising potassium hydroxide from about 5 w % to about 30 w %, C.D.T.A. at a concentration ranging from about 1% to about 5% of the potassium hydroxide concentration, the rest being water. The invention also relates to a method of etching a Titanium, Titanium nitride or Titanium Tungsten barrier layer from a microelectronic device, said method comprising contacting the Titanium, Titanium nitride or Titanium tungsten barrier layer with the solution for a time sufficient to remove the Titanium, Titanium nitride or Titanium tungsten barrier layer.

[Problem] An object is to provide novel composite copper foils. [Means to solve the problem] A composite copper foil comprises a copper foil and a layer of metal other than copper, the metal layer being formed on at least a part of a surface of the copper foil, wherein at least a part of the composite copper foil has protrusions on a surface thereof, and each protrusion has a height of 10 nm or more but 1000 nm or less in a cross-section of the composite copper foil.

Embodiments of the present disclosure provide a surface treatment composition and methods for using same. The composition for removing contaminants from a metallic surface, can include 3 wt % to 40 wt % of at least one bifunctional alkaline compound, 0.03 wt % to 10 wt % of at least one oxidizer comprising a metal salt, and water, where all weight percentages are based on the total weight of the composition.

The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.