A method for treating the surface of a titanium or titanium alloy metal reinforcement of a blade made of composite material enables selective removal of a bonding primer with respect to the titanium or titanium alloy reinforcement. The method includes subjecting the metallic reinforcement to a thermal treatment performed at a temperature of between 250 and 350 C. for a period of between 1 hour and 10 hours in an oxidizing atmosphere. The method further includes subjecting the metallic reinforcement, after the thermal treatment, to a chemical pickling in an alkaline bath.

The present invention provides a zinc coating-forming method for drawing of metallic pipes, including a degreasing step of degreasing a material to be drawn, which is composed of any one of aluminum, an aluminum alloy, copper, and a copper alloy; a first oxidation step of forming an oxide coating on a surface of the material to be drawn, which has been degreased in the degreasing step; and a second oxidation step of forming a zinc coating on the material to be drawn, which has been coated with an oxide.

The present invention provides a zinc coating-forming method for drawing of metallic pipes, including a degreasing step of degreasing a material to be drawn, which is composed of any one of aluminum, an aluminum alloy, copper, and a copper alloy; a first oxidation step of forming an oxide coating on a surface of the material to be drawn, which has been degreased in the degreasing step; and a second oxidation step of forming a zinc coating on the material to be drawn, which has been coated with an oxide.

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

The present invention provides a composition for cleaning a mask comprising a) 0.2 to 10% by weight of two or more alkali compounds selected from alkali hydroxides and alkali carbonates, b) 0.1 to 8% by weight of nitrate, c) 1 to 8% by weight of an oxidizer, and d) residual water, wherein the pH is 11.5 to 14.

According to the present invention, a composition for cleaning a mask and a method for cleaning a mask using the same, which can remove only the film deposited on the mask in a short time without damaging the mask, was provided.

The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.

The water outlet of a subsystem that includes an ultraviolet oxidation device and the water inlet of each substrate treatment device are connected to each other via a main pipe. A hydrogen peroxide removal device is installed between the ultraviolet oxidation device of the subsystem and a non-regenerative ion-exchange device. In addition, a carbon dioxide supply device is installed at the middle of a pipe that branches from the water outlet of the subsystem to reach the substrate treatment device. According to an aspect, the hydrogen peroxide removal device is filled with a platinum-group metal catalyst. Thus, ultrapure water passed through the ultraviolet oxidation device is used as a base to produce carbonated water in which the concentration of hydrogen peroxide dissolved therein is limited to 2 g/L or less and to which carbon dioxide is added to adjust resistivity to be within the range of 0.03 to 5.0 M.Math.cm.

Provided is a cleaning liquid composition which is useful for cleaning of a substrate or the like that has been subjected to a chemical mechanical polishing (CMP) process, etc in the production steps of an electronic device such as a semiconductor element. A cleaning liquid composition according to the present invention is used for the purpose of cleaning a substrate that has a Cu wiring, and comprises one or more basic compounds and one or more nitrogen-containing monocyclic heterocyclic aromatic compounds that contain one or more carboxyl groups or ester groups, provided that in cases where one or more amino groups are contained therein, only amino groups directly bonded to a nitrogen-containing heterocyclic rind are contained. This cleaning liquid composition has a hydrogen ion concentration (pH) of 8-12.

Provided is a cleaning liquid composition which is useful for cleaning of a substrate or the like that has been subjected to a chemical mechanical polishing (CMP) process, etc in the production steps of an electronic device such as a semiconductor element. A cleaning liquid composition according to the present invention is used for the purpose of cleaning a substrate that has a Cu wiring, and comprises one or more basic compounds and one or more nitrogen-containing monocyclic heterocyclic aromatic compounds that contain one or more carboxyl groups or ester groups, provided that in cases where one or more amino groups are contained therein, only amino groups directly bonded to a nitrogen-containing heterocyclic rind are contained. This cleaning liquid composition has a hydrogen ion concentration (pH) of 8-12.