A wire comprising a silver-based wire core having a double-layer coating comprised of an inner layer of palladium or nickel and an adjacent outer layer of gold, wherein the wire exhibits at least one of the intrinsic properties A1) to A3): A1) the average grain size of the crystal grains in the wire core, measured in longitudinal direction, is in the range of from 0.7 to 1.1 μm; A2) the fraction of twin boundaries, measured in longitudinal direction of the wire, is in the range of from 5 to 40%; and, A3) 20 to 70% of the crystal grains of the wire core are oriented in <100> direction, and 3 to 40% of the crystal grains of the wire core are oriented in <111> direction, each % with respect to the total number of crystal grains with orientation parallel to the drawing direction of the wire.

A printed circuit board includes an insulating layer, a circuit pattern on the insulating layer, and a surface treatment layer on the circuit pattern. The surface treatment layer includes a bottom surface having a width wider than a width of a top surface of the circuit pattern.

A printed circuit board includes an insulating layer, a circuit pattern on the insulating layer, and a surface treatment layer on the circuit pattern. The surface treatment layer includes a bottom surface having a width wider than a width of a top surface of the circuit pattern.

In one embodiment, a method for manufacturing an aperture plate includes depositing a releasable seed layer above a substrate, applying a first patterned photolithography mask above the releasable seed layer, the first patterned photolithography mask having a negative pattern to a desired aperture pattern, electroplating a first material above the exposed portions of the releasable seed layer and defined by the first mask, applying a second photolithography mask above the first material, the second photolithography mask having a negative pattern to a first cavity, electroplating a second material above the exposed portions of the first material and defined by the second mask, removing both masks, and etching the releasable seed layer to release the first material and the second material. The first and second material form an aperture plate for use in aerosolizing a liquid. Other aperture plates and methods of producing aperture plates are described according to other embodiments.

In one embodiment, a method for manufacturing an aperture plate includes depositing a releasable seed layer above a substrate, applying a first patterned photolithography mask above the releasable seed layer, the first patterned photolithography mask having a negative pattern to a desired aperture pattern, electroplating a first material above the exposed portions of the releasable seed layer and defined by the first mask, applying a second photolithography mask above the first material, the second photolithography mask having a negative pattern to a first cavity, electroplating a second material above the exposed portions of the first material and defined by the second mask, removing both masks, and etching the releasable seed layer to release the first material and the second material. The first and second material form an aperture plate for use in aerosolizing a liquid. Other aperture plates and methods of producing aperture plates are described according to other embodiments.

Systems and methods are provided for method for etch assisted gold (Au) through silicon mask plating (EAG-TSM). An example method comprises providing a seed layer on a substrate and providing a silicon mask on at least a portion of the seed layer on the substrate. The silicon mask includes one or more via to be filled with Au. The masked substrate is subjected to at least one processing cycle, each processing cycle including an Au plating sub-step and an etch treatment sub-step. The cycles are repeated until a selected via fill thickness is achieved.

Systems and methods are provided for method for etch assisted gold (Au) through silicon mask plating (EAG-TSM). An example method comprises providing a seed layer on a substrate and providing a silicon mask on at least a portion of the seed layer on the substrate. The silicon mask includes one or more via to be filled with Au. The masked substrate is subjected to at least one processing cycle, each processing cycle including an Au plating sub-step and an etch treatment sub-step. The cycles are repeated until a selected via fill thickness is achieved.

Provided is a plating film containing Au and Tl, including Tl oxides including Tl.sub.2O on a surface of the plating film, a ratio of Tl atoms constituting Tl.sub.2O to a total of Tl atoms constituting the Tl oxides and Tl atoms constituting Tl simple substances on the surface being 40% or more.

Provided is a plating film containing Au and Tl, including Tl oxides including Tl.sub.2O on a surface of the plating film, a ratio of Tl atoms constituting Tl.sub.2O to a total of Tl atoms constituting the Tl oxides and Tl atoms constituting Tl simple substances on the surface being 40% or more.

A method of forming a coated component using an additive manufacturing system including building a body portion of the component on a build plate. An outer surface of the body portion can include an indentation resulting from the additive manufacturing system. The method further includes performing at least one post-build process on the body portion. The method yet further includes forming a coating layer on an outer surface of the processed body portion. The coating layer may surround a portion of the body component and may impregnate the indentation. A thickness of the coating layer may be a function of at least one of surface roughness, size of the indentation, or a diameter of particles used to build the additive manufactured bracket.