The present invention is related to a preferably oriented nanotwinned Au film, a method of preparing the same, and a bonding structure comprising the same. The nanotwinned Au film has a thickness direction. The nanotwinned Au film is stacked along a [220] crystallographic axis orientation in the thickness direction. At least 50% by volume of the nanotwinned Au film is composed of a plurality of nanotwinned Au grains which are adjacent to each other, arranged in a direction perpendicular to the thickness direction, and stacked along a [111] crystallographic axis orientation.

The present invention is related to a preferably oriented nanotwinned Au film, a method of preparing the same, and a bonding structure comprising the same. The nanotwinned Au film has a thickness direction. The nanotwinned Au film is stacked along a [220] crystallographic axis orientation in the thickness direction. At least 50% by volume of the nanotwinned Au film is composed of a plurality of nanotwinned Au grains which are adjacent to each other, arranged in a direction perpendicular to the thickness direction, and stacked along a [111] crystallographic axis orientation.

A method for manufacturing a miniaturized electrochemical cell and a miniaturized electrochemical cell is provided. The method includes the following steps: a) forming a colloidal template of colloidal particles made of an electrically insulating material, on a substrate made of an electrically conducting material, b) depositing by electrodeposition in the void spaces of the colloidal template, at least three alternating layers forming a repeating unit, the alternating layers being made of an electron conducting material or a semi -conducting material, the intermediate layer(s) being made of a material M.sub.3 different from materials M.sub.1 and M.sub.2 constituting respectively the upper and lower layers, the material M3 having a standard potential lower than the standard potentials of the materials M.sub.1 and M.sub.2, c) removal of the material M.sub.3 of intermediate layer(s), and d) removal of the colloidal particles of the upper and lower layers to obtain the desired electrodes.

A method for manufacturing a miniaturized electrochemical cell and a miniaturized electrochemical cell is provided. The method includes the following steps: a) forming a colloidal template of colloidal particles made of an electrically insulating material, on a substrate made of an electrically conducting material, b) depositing by electrodeposition in the void spaces of the colloidal template, at least three alternating layers forming a repeating unit, the alternating layers being made of an electron conducting material or a semi -conducting material, the intermediate layer(s) being made of a material M.sub.3 different from materials M.sub.1 and M.sub.2 constituting respectively the upper and lower layers, the material M3 having a standard potential lower than the standard potentials of the materials M.sub.1 and M.sub.2, c) removal of the material M.sub.3 of intermediate layer(s), and d) removal of the colloidal particles of the upper and lower layers to obtain the desired electrodes.

An article includes a substrate formed of a molybdenum-based alloy. A barrier layer is disposed on the substrate. The barrier layer is formed of at least one noble metal.

An article includes a substrate formed of a molybdenum-based alloy. A barrier layer is disposed on the substrate. The barrier layer is formed of at least one noble metal.

The present disclosure provides a method for producing a wiring substrate. A seeded substrate is first prepared. The seeded substrate includes an insulation substrate, a conductive undercoat layer having a hydrophilic surface and provided on the insulation substrate, a conductive seed layer provided on a first region of the surface of the undercoat layer, the first region having a predetermined pattern, and a water-repellent layer on the second region of the surface of the undercoat layer, the second region being a region other than the first region. Subsequently, a metal layer is formed on the seed layer. A voltage is applied between the anode and the seed layer while a solid electrolyte membrane being disposed between the seeded substrate and the anode, and the solid electrolyte membrane and the seed layer being pressed into contact with each other. Thereafter, the water-repellent layer and the undercoat layer are etched.

An autocatalytic gold bath capable of depositing gold from solution onto a substrate, wherein the substrate has one or more metal layers thereon. The autocatalytic gold bath includes (a) a chelator; (b) a gold salt; and (c) a reducing agent, wherein the reducing agent comprises an organic molecule having more than one carbon atom on the organic molecule. A process of plating gold onto the surface of the one or more metal layers on the substrate is also included. The gold plating bath can be used to deposit a final finish to the surface of the one or more metal layers which can be formed in an ENIG, ENEPIG, EPAG, direct gold over copper or gold over silver process.

An autocatalytic gold bath capable of depositing gold from solution onto a substrate, wherein the substrate has one or more metal layers thereon. The autocatalytic gold bath includes (a) a chelator; (b) a gold salt; and (c) a reducing agent, wherein the reducing agent comprises an organic molecule having more than one carbon atom on the organic molecule. A process of plating gold onto the surface of the one or more metal layers on the substrate is also included. The gold plating bath can be used to deposit a final finish to the surface of the one or more metal layers which can be formed in an ENIG, ENEPIG, EPAG, direct gold over copper or gold over silver process.

Provided is a method of manufacturing a structure that can be easily bonded to a bonding target. The method of manufacturing a structure includes: a conductive layer forming step of forming a conductive layer having conductivity on a part of a surface of an insulating support including at least one surface; a valve metal layer forming step of forming a valve metal layer that covers at least a part of the conductive layer; an anodic oxidation film forming step of forming an anodic oxidation film by performing an anodization treatment on the valve metal layer in a region on the conductive layer using the conductive layer as an electrode; a micropore forming step of forming a plurality of micropores that extend in a thickness direction on the anodic oxidation film; and a filling step of filling the micropores with a conductive material, in which a valve metal layer removing step of removing the valve metal layer having undergone the anodic oxidation film forming step is performed between the anodic oxidation film forming step and the filling step.