Various embodiments of the present invention relate to a secondary battery, wherein a technical problem to be solved is to provide a secondary battery capable of maintaining an electrical insulating state between a case (can) and a cap assembly even after a gasket is melted due to short-circuiting and heat generation. To this end, the present invention provides a secondary battery comprising: a cylindrical can; an electrode assembly received, along with an electrolyte, in the cylindrical can; a cap assembly for sealing the cylindrical can; and a gasket interposed between the cylindrical can and the cap assembly, wherein the gasket further includes an insulating member having a melting temperature higher than a melting temperature of the gasket.

Various embodiments of the present invention relate to a secondary battery, wherein a technical problem to be solved is to provide a secondary battery capable of maintaining an electrical insulating state between a case (can) and a cap assembly even after a gasket is melted due to short-circuiting and heat generation. To this end, the present invention provides a secondary battery comprising: a cylindrical can; an electrode assembly received, along with an electrolyte, in the cylindrical can; a cap assembly for sealing the cylindrical can; and a gasket interposed between the cylindrical can and the cap assembly, wherein the gasket further includes an insulating member having a melting temperature higher than a melting temperature of the gasket.

Provided herein are methods and systems for electrolytic processing of metallic substrates, such as aluminum alloys. The disclosure provides methods of making an anodized substrate by anodizing a metallic substrate in an electrolyte solution comprising phosphoric acid. In particular, the disclosure describes various conditions for anodizing the metallic substrate, including temperature, acid concentration, and voltage. The disclosure also provides systems for carrying out described methods.

Proposed are a manufacturing method of an anodic oxide film structure, and an anodic oxide film structure. More particularly, proposed are a manufacturing method of an anodic oxide film structure, and an anodic oxide film structure, wherein production yield of the entire product can be improved by repairing a defective region to be made normal.

Proposed are a manufacturing method of an anodic oxide film structure, and an anodic oxide film structure. More particularly, proposed are a manufacturing method of an anodic oxide film structure, and an anodic oxide film structure, wherein production yield of the entire product can be improved by repairing a defective region to be made normal.

A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10.sup.−6/K. A metal oxide layer is then disposed over a surface of the component body.

A method of corrosion inhibition on a substrate may comprise: applying a sealing solution to an anodized surface of the substrate, wherein the sealing solution may comprise a nanomaterial dopant and a corrosion inhibiting compound, wherein the nanomaterial dopant may comprise at least one of graphene nanoplatelets, carbon nanotubes, and carbon nanofibers, and wherein the corrosion inhibiting compound may comprise at least one of a trivalent chromium compound, a trivalent praseodymium compound, nickel acetate, cobalt acetate, siloxanes, silicates, orthophosphates, molybdates, or a compound comprising at least one of elemental or ionic praseodymium, cerium, cesium, lanthanum, zinc, lithium, magnesium, or yttrium; and drying the sealing solution on the substrate to form a sealing layer comprising the nanomaterial dopant and the corrosion inhibiting compound.

The surface-treated aluminum material includes an aluminum material and an oxide film formed on at least part of a surface of the aluminum material, and when a perimeter and an area of a void on a surface of the oxide film are represented by L and S, respectively, an undulation degree of the void defined as L.sup.2/S×(¼π) is 2.5 or more.

The surface-treated aluminum material includes an aluminum material and an oxide film formed on at least part of a surface of the aluminum material, and when a perimeter and an area of a void on a surface of the oxide film are represented by L and S, respectively, an undulation degree of the void defined as L.sup.2/S×(¼π) is 2.5 or more.

A component for use in a plasma processing apparatus, which is to be exposed to a plasma, includes a base material, an alumite layer and a thermally sprayed film. The base material has a plurality of through holes and a rough surface at which one end of each of the through holes is opended. The alumite layer is formed on a surface of the base material having the rough surface by an anodic oxidation process. The thermally sprayed film is formed on the rough surface with the alumite layer therebetween.