Provided are a measurement method, an electrochemical measuring cell, and a measuring device which are capable of directly and continuously measuring the concentration of monovalent copper ions (Cu.sup.+), 3-mercaptopropyl sulfonate (MPS), or Cu.sup.+-MPS, which is a plating additive breakdown product, in a plating solution during a copper plating process.

The invention relates to the field of liquid phase synthesis of diamond or any other allotropic forms of carbon and more particularly to a process of liquid phase synthesis of carbonaceous films, according to which a voltage is applied, in a solution containing carbonaceous molecules, to a substrate on which a carbonaceous layer is to be deposited and photons are sent to the surface of the substrate. To this end, the invention also relates to a device for the liquid phase synthesis of carbonaceous films comprising a synthesis vessel inside which are arranged means for applying a voltage in a reaction zone, and photonic means are arranged to send photons to the reaction zone.

A plating system is provided. The plating system includes an electroplating chamber defining a plating area within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating area of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating area of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating area.

A method for depositing a zinc-nickel alloy on a substrate, including: (a) providing the substrate, (b) providing an aqueous zinc-nickel deposition bath as catholyte in a compartment, wherein the compartment includes an anode and anolyte, the anolyte being separated from catholyte by a membrane, and the catholyte includes nickel ions, complexing agent, zinc ions, (c) depositing zinc-nickel alloy onto the substrate, wherein after step (c) nickel ions have lower concentration than before step (c), (d) rinsing the zinc-nickel coated substrate in water, obtaining a rinsed zinc-nickel coated substrate and rinse water including a portion of the complexing agent and nickel ions, wherein (i) a portion of rinse water and/or a portion of catholyte is treated in a first treatment compartment to separate water from the complexing agent and the nickel ions, (ii) returning the separated complexing agent to the catholyte, and (iii) adding nickel ion to the catholyte.

An electroplating system includes a tank functioning as an anode, wherein the tank is configured in a horizontal orientation having a length greater than its height, a component part disposed within the tank and functioning as a cathode, an electrical connection, coupled to the anode and cathode, for providing an electric current, and a supply line for delivering an electrolytic fluid to within the tank.

An electroplating apparatus includes: an electroplating bath including an anode region, in which an anode electrode is arranged, a cathode region and a membrane; a head unit including a contact ring holding a wafer and configured so that a first cathode potential is applied to the contact ring during an electroplating process; a reverse potential electrode arranged adjacent to the membrane and configured so that a second cathode potential is applied to the reverse potential electrode during the electroplating process, and a reverse cathode potential is applied to the reverse potential electrode during a rinsing process, and a power supply unit configured to apply the first cathode potential and the second cathode potential during the electroplating process, and further configured to apply the reverse cathode potential and a reverse anode potential to the anode electrode during the rinsing process.

A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.

An electrochemical plating apparatus for performing an edge bevel removal process on a wafer includes a cell chamber. The cell chamber includes two or more nozzles located adjacent to the edge of the wafer. A flow regulator is arranged with each of the two or more nozzles, which is configured to regulate an tap width of a deposited film flowing out through the each of the two or more nozzles. The electrochemical plating apparatus further includes a controller to control the flow regulator such that tap width of the deposited film includes a pre-determined surface profile. The two or more nozzles are located in radially or angularly different dispensing positions above the wafer.

Electroplating methods and systems are described that include adding a metal-ion-containing starting solution to a catholyte to increase a metal ion concentration in the catholyte to a first metal ion concentration. The methods and systems further include measuring the metal ion concentration in the catholyte while the metal ions electroplate onto a substrate and the catholyte reaches a second metal ion concentration that is less than the first metal ion concentration. The methods and systems additionally include adding a portion of an anolyte directly to the catholyte when the catholyte reaches the second metal ion concentration. The addition of the portion of the anolyte increases the metal ion concentration in the catholyte to a third metal ion concentration that is greater than or about the first metal ion concentration.

A novel method of preparing and using an improved electrolyte bath for the purpose of electrodeposition of metallic film onto a substrate is disclosed. The electrolyte bath makes use of unexpected findings in the process of electrodeposition with the claimed compounds and elements to perform the process with less expensive and more environmentally-friendly materials to produce a consistent, high-quality deposition.