Manufacturing methods are disclosed that can electropolish a metal surface by disposing an electrode over the metal surface, and a permeable dielectric spacer between the metal surface and the electrode. An electrolyte is infiltrated into the permeable dielectric spacer, and an electrical voltage differential is applied to the electrode and the metal surface.

In one implementation a cathode for electrochemical metal removal has a generally disc-shaped body and a plurality of channels in the generally disc-shaped body, where the channels are configured for passing electrolyte through the body of the cathode. The channels may be fitted with non-conductive (e.g., plastic) tubes that in some embodiments extend above the body of the cathode to a height of at least 1 cm. The cathode may also include a plurality of indentations at the edge to facilitate electrolyte flow at the edge of the cathode. In some embodiments the cathode includes a plurality of non-conductive fixation elements on a conductive surface of the cathode, where the fixation elements are attachable to one or more handles for removing the cathode from the electrochemical metal removal apparatus.

Systems and methods for achieving uniformity across a redistribution layer are described. One of the methods includes patterning a photoresist layer over a substrate. The patterning defines a region for a conductive line and a via disposed below the region for the conductive line. The method further includes depositing a conductive material in between the patterned photoresist layer, such that the conductive material fills the via and the region for the conductive line. The depositing causes an overgrowth of conductive material of the conductive line to form a bump of the conductive material over the via. The method also includes planarizing a top surface of the conductive line while maintaining the patterned photoresist layer present over the substrate. The planarizing is facilitated by exerting a horizontal shear force over the conductive line and the bump. The planarizing is performed to flatten the bump.

Systems and methods for achieving uniformity across a redistribution layer are described. One of the methods includes patterning a photoresist layer over a substrate. The patterning defines a region for a conductive line and a via disposed below the region for the conductive line. The method further includes depositing a conductive material in between the patterned photoresist layer, such that the conductive material fills the via and the region for the conductive line. The depositing causes an overgrowth of conductive material of the conductive line to form a bump of the conductive material over the via. The method also includes planarizing a top surface of the conductive line while maintaining the patterned photoresist layer present over the substrate. The planarizing is facilitated by exerting a horizontal shear force over the conductive line and the bump. The planarizing is performed to flatten the bump.

In one implementation a wafer processing method includes filling a plurality of through-resist recessed features with a metal, such that a ratio of fill rate of a first feature to a fill rate of a second feature is R1; followed by electrochemically removing metal such that a ratio of metal removal rate from the first feature to the metal removal rate from the second feature is greater than R1, improving the uniformity of the fill. In some embodiments the method includes contacting an anodically biased substrate with an electrolyte such that the electrolyte has a transverse flow component in a direction that is substantially parallel to the working surface of the substrate. The method can be implemented in an apparatus that is configured for generating the transverse flow at the surface of the substrate. In some implementations the method makes use of distinct electrochemical regimes to achieve improvement in uniformity.

A copper alloy plate containing in a center part of a plate thickness direction more than 2.0% (% by mass) and 32.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.1% of Fe, and 0.005% or more and 0.1% or less of P; and the balance Cu, including a surface layer part in which a surface Zn concentration in a surface is 60% or less of a center Zn concentration in the center part, having a depth from the surface to where Zn concentration is 90% of the center Zn concentration; and in the surface layer, the Zn concentration increases from the surface toward the center part in the plate thickness direction at a concentration gradient of 10% by mass/m or more and 1000% by mass/m or less.

Providing a copper alloy plate, in which center Mg concentration at a center part in a plate thickness direction 0.1 mass % or more and less than 0.3 mass %, center P concentration is 0.001 mass % or more and 0.2 mass % or less, and the balance is composed of Cu and inevitable impurities; in which surface Mg concentration at a surface is 70% or less of the center Mg concentration; in which a surface layer part defined by a prescribed thickness from the surface has a concentration gradient of Mg of 0.05 mass %/m or more and 5 mass %/m or less increasing from surface toward center part of the plate thickness direction; and in which restraint of color change of the surface and increase of electrical contact resistance, and adhesiveness of a plating film are excellent due to maximum Mg concentration in the surface layer part is 90% of the center Mg concentration.

The invention relates to a method for the electrochemical polishing of metal surfaces by means of repeating pulse sequences, wherein at least one anodic pulse is provided, the current intensity of which rises continuously in the time curve up to a specifiable value. The invention further relates to the use of said method for components produced in 3-D and to a system therefor.

A device for burnishing and smoothing metal parts, particularly suitable for use in mechanical-galvanic processes, comprising a main body having a fastening disc to which guides are radially coupled and the body of which includes at least three mobile propelling systems which are actuated by electro-mechanical means and move in a synchronized concentric manner, approaching and moving away from the central point and acting on a rotating frame from equidistant angles. The frame is configured to secure pieces to be treated and it also has a detachable head that is disposed centrally above a cylindrical tank. The propelling systems, provided with brushes, move from an open position in which they remain separate from one another and at a distance from the center, into a closed position in which they are joined to one another in the center of the tank, coming into contact with the structure containing the parts to be treated.

A device for burnishing and smoothing metal parts, particularly suitable for use in mechanical-galvanic processes, comprising a main body having a fastening disc to which guides are radially coupled and the body of which includes at least three mobile propelling systems which are actuated by electro-mechanical means and move in a synchronized concentric manner, approaching and moving away from the central point and acting on a rotating frame from equidistant angles. The frame is configured to secure pieces to be treated and it also has a detachable head that is disposed centrally above a cylindrical tank. The propelling systems, provided with brushes, move from an open position in which they remain separate from one another and at a distance from the center, into a closed position in which they are joined to one another in the center of the tank, coming into contact with the structure containing the parts to be treated.