Patent classifications
C30B7/04
CONTINUOUS PROCESS AND SYSTEM FOR THE PRODUCTION OF SODIUM BICARBONATE CRYSTALS
A continuous process for the production of sodium bicarbonate crystals from the carbon dioxide of a gas stream including an absorption step of the carbon dioxide from a gas stream into an aqueous solution including a sodium carbonate salt to produce an aqueous solution of sodium bicarbonate, then a crystallization step of the sodium bicarbonate salt obtained at the first step. A system for the production of sodium bicarbonate crystals from carbon dioxide of a gas stream including a control unit, an absorption unit and a crystallization unit.
CONTINUOUS PROCESS AND SYSTEM FOR THE PRODUCTION OF SODIUM BICARBONATE CRYSTALS
A continuous process for the production of sodium bicarbonate crystals from the carbon dioxide of a gas stream including an absorption step of the carbon dioxide from a gas stream into an aqueous solution including a sodium carbonate salt to produce an aqueous solution of sodium bicarbonate, then a crystallization step of the sodium bicarbonate salt obtained at the first step. A system for the production of sodium bicarbonate crystals from carbon dioxide of a gas stream including a control unit, an absorption unit and a crystallization unit.
FILM FORMATION APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.
FILM FORMATION APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.
Solution deposition method for forming metal oxide or metal hydroxide layer
A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.
Solution deposition method for forming metal oxide or metal hydroxide layer
A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.
METHOD FOR IDENTIFYING MOLECULAR STRUCTURE
The present invention provides a novel method for identifying a molecular structure by single crystal X-ray analysis. A single crystal that gives an X-ray diffraction spectrum sufficient for determining the structure of the molecule can be efficiently obtained by including a test molecule in a metal complex and then crystallizing the test-molecule-including metal complex. By analyzing this single crystal by X-ray analysis, it is possible to determine the structure of the test molecule without obtaining a single crystal of the test molecule. With the method according to the present invention, the structure of a test molecule in a trace amount of sample can also be determined.
MULTIFUNCTIONAL NANOCELLULAR SINGLE CRYSTAL NICKEL FOR TURBINE APPLICATIONS
A nanocellular single crystal nickel based material is provided having a thermal diffusivity in the range of 0.0002 cm{circumflex over ()}2/s to 0.02 cm{circumflex over ()}2/s and a thermal conductivity in the range of 0.024 W/mK to 9.4 W/mK. The nanocellular single crystal nickel based material may be used to form turbine engine components. The nanocellular single crystal nickel based material may be produced by providing a first solution containing a nickel precursor and deionized water, providing a second solution containing a structure controlling polymer/surfactant and an alcohol, mixing the first and second solutions into a solution containing a reducing agent to form a third solution, and processing the third solution to create the nanocellular single crystal based material.
MULTIFUNCTIONAL NANOCELLULAR SINGLE CRYSTAL NICKEL FOR TURBINE APPLICATIONS
A nanocellular single crystal nickel based material is provided having a thermal diffusivity in the range of 0.0002 cm{circumflex over ()}2/s to 0.02 cm{circumflex over ()}2/s and a thermal conductivity in the range of 0.024 W/mK to 9.4 W/mK. The nanocellular single crystal nickel based material may be used to form turbine engine components. The nanocellular single crystal nickel based material may be produced by providing a first solution containing a nickel precursor and deionized water, providing a second solution containing a structure controlling polymer/surfactant and an alcohol, mixing the first and second solutions into a solution containing a reducing agent to form a third solution, and processing the third solution to create the nanocellular single crystal based material.
Nonlinear optical crystal of cesium fluorooxoborate, and method of preparation and use thereof
A nonlinear optical crystal of cesium fluorooxoborate, and a method of preparation and use thereof. The crystal has a chemical formula of CsB.sub.4O.sub.6F and a molecular weight of 291.15. It belongs to an orthorhombic crystal system, with a space group of Pna2.sub.1, crystal cell parameters of a=7.9241 , b=11.3996 , c=6.6638 , and ===90, and a unit cell volume of 601.95 .sup.3. A melt method, high temperature solution method, vacuum encapsulation method, hydrothermal method or room temperature solution method is used to grow the crystal of CsB.sub.4O.sub.6F.