A heat exchanging device includes: an inner wall and an outer wall, wherein the inner wall is close to the center axis of the heat exchanging device. The inner wall and the outer wall together form a chamber for a cooling medium to flow. The inner wall is provided with at least one protrusion component having an internal cavity. The protruding direction of the protrusion component faces the center axis. The internal cavity of the protrusion component is in communication with the chamber formed by the inner wall and the outer wall. The protruding direction of the protrusion component faces the crystal bar, and the internal cavity of the protrusion component is in communication with the chamber formed by the inner wall and the outer wall, which increases the heat exchanging area, and reduces the horizontal distance between the cooling medium and the crystal bar.

A monocrystalline silicon includes a shoulder, a straight body, and a tail. The straight body includes: a first straight body having a first diameter d1; and a second straight body provided closer to the shoulder than the first straight body is and having a second diameter d2 larger than the first diameter d1 by from 3.5% to 15%. Firstly, a resistivity at a start point of the straight body connected to the shoulder is set to a first resistivity. Subsequently, the monocrystalline silicon is pulled up and grown to form the first straight body, and a resistivity at a start point of the first straight body is set to a second resistivity lower than the first resistivity.

A monocrystalline silicon includes a shoulder, a straight body, and a tail. The straight body includes: a first straight body having a first diameter d1; and a second straight body provided closer to the shoulder than the first straight body is and having a second diameter d2 larger than the first diameter d1 by from 3.5% to 15%. Firstly, a resistivity at a start point of the straight body connected to the shoulder is set to a first resistivity. Subsequently, the monocrystalline silicon is pulled up and grown to form the first straight body, and a resistivity at a start point of the first straight body is set to a second resistivity lower than the first resistivity.

A method for growing a crystal boule includes the steps of: periodically pulling upwardly a seed crystal dipped into a melt in a crucible to grow a first neck of the crystal boule below the seed crystal; and continuously pulling upwardly the seed crystal and the first neck of the crystal boule to grow a second neck of the crystal boule below the first neck.

A method for growing a crystal boule includes the steps of: periodically pulling upwardly a seed crystal dipped into a melt in a crucible to grow a first neck of the crystal boule below the seed crystal; and continuously pulling upwardly the seed crystal and the first neck of the crystal boule to grow a second neck of the crystal boule below the first neck.

Method for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. A plurality of process parameters are regulated during ingot growth including a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt. Regulating the plurality of process parameters may include controlling the position of a maximum gauss plane of the horizontal magnetic field, controlling the strength of the horizontal magnetic field, and controlling the crucible rotation rate.

Method for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. A plurality of process parameters are regulated during ingot growth including a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt. Regulating the plurality of process parameters may include controlling the position of a maximum gauss plane of the horizontal magnetic field, controlling the strength of the horizontal magnetic field, and controlling the crucible rotation rate.

The invention provides a semiconductor crystal growth device comprising a furnace body; a crucible; a pulling device; a horizontal magnetic field applying device; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field. According to the semiconductor crystal growth device of the present invention, the temperature distribution inside the melt silicon and quality of the semiconductor crystal are improved.

The invention provides a semiconductor crystal growth device comprising a furnace body; a crucible; a pulling device; a horizontal magnetic field applying device; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field. According to the semiconductor crystal growth device of the present invention, the temperature distribution inside the melt silicon and quality of the semiconductor crystal are improved.

A method of estimating an oxygen concentration in monocrystalline silicon, which is pulled up by a pull-up device having a hot zone with a plane-asymmetric arrangement with respect to a plane defined by a crystal pull-up shaft and an application direction of a horizontal magnetic field, includes, in at least one of a neck-formation step or a shoulder-formation step for the monocrystalline silicon: a step of measuring a surface temperature of a silicon melt at a point defining a plane-asymmetric arrangement of a hot zone, and a step of estimating the oxygen concentration in a straight body of the pulled-up monocrystalline silicon based on the measured surface temperature of the silicon melt and a predetermined relationship between the surface temperature of the silicon melt and the oxygen concentration in the monocrystalline silicon.