The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

Provided are an ingot growth device and growth method. The ingot growth device includes a furnace body, a crucible, a cooling jacket and a reflector, wherein the cooling jacket is arranged inside the furnace body to cool the ingot, the reflector is arranged on a periphery of the cooling jacket, the reflector includes an upper reflector part and a lower reflector part, the upper reflector part is cylindrical and surrounds the cooling jacket, the lower reflector part is arranged at a lower end of the upper reflector part and is located on a lower side of the cooling jacket, the lower reflector part is of a hollow circular truncated cone structure with a large top and a small bottom, a groove is formed on an inner peripheral wall of the circular truncated cone structure, the top of the groove penetrates through the circular truncated cone structure.

Provided are an ingot growth device and growth method. The ingot growth device includes a furnace body, a crucible, a cooling jacket and a reflector, wherein the cooling jacket is arranged inside the furnace body to cool the ingot, the reflector is arranged on a periphery of the cooling jacket, the reflector includes an upper reflector part and a lower reflector part, the upper reflector part is cylindrical and surrounds the cooling jacket, the lower reflector part is arranged at a lower end of the upper reflector part and is located on a lower side of the cooling jacket, the lower reflector part is of a hollow circular truncated cone structure with a large top and a small bottom, a groove is formed on an inner peripheral wall of the circular truncated cone structure, the top of the groove penetrates through the circular truncated cone structure.

A method of growing the ingot, including following steps: S1, providing an initial charge into a crucible; S2, heating the crucible to melt the initial charge, and after a set time, rotating the crucible at a rotation speed within a set speed range; S3, after a melting process of the charge is completed, descending a feed device to the position above the melt level in the crucible and a distance between feed device and the melt level being h, the feed device including a feed tube, and the feed tube adding a charge into a feed zone of the crucible; and S4, feeding in the feed zone, and growing an ingot in a growth zone. In Sl, the initial charge is respectively loaded into a first chamber, a second chamber and a third chamber,

A method of growing the ingot, including following steps: S1, providing an initial charge into a crucible; S2, heating the crucible to melt the initial charge, and after a set time, rotating the crucible at a rotation speed within a set speed range; S3, after a melting process of the charge is completed, descending a feed device to the position above the melt level in the crucible and a distance between feed device and the melt level being h, the feed device including a feed tube, and the feed tube adding a charge into a feed zone of the crucible; and S4, feeding in the feed zone, and growing an ingot in a growth zone. In Sl, the initial charge is respectively loaded into a first chamber, a second chamber and a third chamber,

A RAMO.sub.4 substrate that does not easily crack during or after the formation of group III nitride crystal includes a single crystal represented by general formula RAMO.sub.4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). The RAMO.sub.4 substrate has a crystal plane with a curvature radius r of 52 m or more, and a square value of correlation coefficient ρ of 0.81 or more. The curvature radius r is calculated as an absolute value from X-ray peak position ωi and measurement position Xi after the measurements of X-ray peak positions ωi at a plurality of positions Xi lying on a straight line passing through the center of the RAMO.sub.4 substrate. The correlation coefficient ρ is a measure of correlation between ω and measurement position Xi.

A RAMO.sub.4 substrate that does not easily crack during or after the formation of group III nitride crystal includes a single crystal represented by general formula RAMO.sub.4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). The RAMO.sub.4 substrate has a crystal plane with a curvature radius r of 52 m or more, and a square value of correlation coefficient ρ of 0.81 or more. The curvature radius r is calculated as an absolute value from X-ray peak position ωi and measurement position Xi after the measurements of X-ray peak positions ωi at a plurality of positions Xi lying on a straight line passing through the center of the RAMO.sub.4 substrate. The correlation coefficient ρ is a measure of correlation between ω and measurement position Xi.

A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

Single crystal silicon with <100> orientation is doped with n-type dopant and comprises a starting cone, a cylindrical portion and an end cone, a crystal angle being not less than 20° and not greater than 30° in a middle portion of the starting cone, the length of which is not less than 50% of a length of the starting cone, and edge facets extending from a periphery of the single crystal into the single crystal, the edge facets in the starting cone and in the cylindrical portion of the single crystal in each case having a length which is not more than 700 μm.