A machine control device is configured to include a measurement unit that measures regarding a state of a controlled object handled by a machine apparatus, a determination unit that determines a constraint determination value by comparing the measurement result by the measurement unit with a predetermined constraint condition, control units and that perform operation control for the machine apparatus based on the constraint determination value determined by the determination unit according to the relationship set for the constraint determination value and the operation control, and a learning unit that reconfigures the relationship between the constraint determination value and the operation control when the constraint determination value changes due to the operation control performed by the control units.

Methods for producing single crystal silicon ingots in which the dopant concentration in the silicon melt is controlled are disclosed. The control of the dopant concentration enhances ingot quality by the reduction or elimination of dislocations in the neck, crown, and main body portions of the single crystal silicon ingot.

Methods for producing single crystal silicon ingots in which the dopant concentration in the silicon melt is controlled are disclosed. The control of the dopant concentration enhances ingot quality by the reduction or elimination of dislocations in the neck, crown, and main body portions of the single crystal silicon ingot.

A method and device for controlling constant-diameter growth of monocrystalline silicon and a storage medium, relating to the technical field of crystal fabrication, which can automatically adjust the controlling level of the crystal constant-diameter growth, to in turn control the crystal diameter better. The particular technical solution includes: acquiring PID initial values of an i-th cycle period; correcting the PID initial values of the i-th cycle period, and obtaining PID corrected values of the i-th cycle period; and according to the PID corrected values of the i-th cycle period, controlling a crystal growth diameter of the i-th cycle period. The present application is used to control constant-diameter growth of monocrystalline silicon.

A method and device for controlling constant-diameter growth of monocrystalline silicon and a storage medium, relating to the technical field of crystal fabrication, which can automatically adjust the controlling level of the crystal constant-diameter growth, to in turn control the crystal diameter better. The particular technical solution includes: acquiring PID initial values of an i-th cycle period; correcting the PID initial values of the i-th cycle period, and obtaining PID corrected values of the i-th cycle period; and according to the PID corrected values of the i-th cycle period, controlling a crystal growth diameter of the i-th cycle period. The present application is used to control constant-diameter growth of monocrystalline silicon.

A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

A production method of a monocrystalline silicon includes: forming a shoulder of the monocrystalline silicon; and forming a straight body of the monocrystalline silicon. In forming the shoulder, the shoulder is formed such that a part of growth striations, which extend radially across the shoulder, has an outer end interrupted by another part of the growth striations not to reach a peripheral portion of the shoulder and that no remelt growth area with a height of 200 μm or more in a growth direction is generated.

A production method of a monocrystalline silicon includes: forming a shoulder of the monocrystalline silicon; and forming a straight body of the monocrystalline silicon. In forming the shoulder, the shoulder is formed such that a part of growth striations, which extend radially across the shoulder, has an outer end interrupted by another part of the growth striations not to reach a peripheral portion of the shoulder and that no remelt growth area with a height of 200 μm or more in a growth direction is generated.

The present invention relates to a pulling control device for growing a single crystal ingot capable of controlling an eccentricity of a single crystal ingot by varying a seed rotation number in real time, and a pulling control method applied thereto. According to the present invention, a pulling control device for growing a single crystal ingot and a pulling control method applied thereto may minimize that a seed rotation number (f) is set to a specific rotation number (fo) causing a resonance phenomenon of a melt by providing a target seed output rotation number (T_f.sub.out) that varies in real time so as to match a rotation form for each length of an ingot according to inputting a target seed input rotation number (T_f.sub.in) and controlling a rotation number (f) of a seed cable, and it is possible to prevent fluctuation of the melt and an eccentricity phenomenon of the ingot.