A crystal growth device and a crystal growth method of a silicon carbide single crystal are provided. The growth device includes a crucible portion including first and second crucible portions coaxially provided; and a heating portion including first, second, and third heating portions. A seed crystal accommodation portion is provided in the middle of a top of the first crucible portion. The second crucible portion is provided with a cavity as a raw material accommodation portion. The first crucible portion's outer diameter is smaller than the second crucible portion's. A concavity recessed towards the first crucible portion is provided in the middle of a bottom of the second crucible portion. The first, second, and third heating portions are circumferentially provided in the concavity, the second crucible portion, and outside the first crucible portion respectively. The third heating portion's inner diameter is smaller than the second crucible portion's outer diameter.

Disclosed is a device for preparing a silicon carbide crystal including a crucible and a crystal expansion guide assembly. The crucible includes a crucible body and a crucible cover fixing a seed and covering the crucible body. The crystal expansion guide assembly includes a frame member and a tubular core member. The frame member is fixed to the crucible body, located between the crucible cover and a raw material accommodated in the crucible body, and provided with a through hole with a diameter greater than a diameter of a growth surface of the seed. The tubular core member is mechanically connected to an inner wall of the through hole. During a crystal growth process, the tubular core member falls off due to contact with a growth front of a crystal. The frame member does not react with the crystal. Thus, a large-sized crystal ingot with high quality can be obtained.

In embodiments, methods of configuring a molecular beam epitaxy system include providing a rotation mechanism configured to rotate a substrate deposition plane of a substrate around a center axis of the substrate deposition plane. A positioning mechanism is provided, being configured to allow the substrate deposition plane and an exit aperture of at least one material source in a plurality of material sources to be adjusted in position relative to each other between production runs. The at least one material source has a predetermined material ejection spatial distribution with a symmetry axis that intersects the substrate at a point offset from the center axis. A size of a reaction chamber, that houses the rotation mechanism and the plurality of material sources, is scaled based on the orthogonal distance and the lateral distance in relationship to a radius of the substrate.

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

An ingot in which generation of crack is sufficiently suppressed is obtained. The ingot includes: a seed substrate formed of silicon carbide; and a silicon carbide layer grown on the seed substrate and containing nitrogen atoms. The silicon carbide layer has a thickness of 15 mm or more in a growth direction. In the silicon carbide layer, a concentration gradient of the nitrogen atoms in the growth direction is 510.sup.17 atoms/cm.sup.4 or less.

An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material; and a filter part for selectively filtering a specific component in the crucible, wherein the filter part comprises a polymer.

Volumetric shapes of SiC starting materials for boule growth. Methods of controlling vapor deposition growth of SiC boules, and providing directional flux. Methods of increase the number of wafers, the number of electronic components and the number of operable devices from a single boule growth cycle.

The present invention relates to a crucible with a cavity for growing a SiC volume mono crystal by sublimation growth in a direction of growth (Y). The crucible comprises an end wall (110) with a seed holder (112) for holding a SiC seed crystal in the cavity, the end wall (110) extending in a direction (r) perpendicular to the direction of growth (Y); a side wall (140) extending in the direction of growth (Y), the side wall (140) preventing permeation of a doping gas from an external into the cavity, the doping gas for doping the SiC volume mono crystal during the sublimation growth; and a diffusion region (114) allowing permeation of the doping gas from the external in the cavity, wherein the diffusion region (114) is located between the seed holder (112) and an edge (142) of the side wall (140).

Embodiments of the present disclosure provide crystal growth methods and devices. The crystal growth methods include placing a feedstock in a material zone of a growth chamber and placing a seed crystal in a growth zone of the growth chamber. The material zone and the growth zone are separated by a partition, and the partition includes at least one outlet. The crystal growth methods further include growing a crystal based on the seed crystal and the feedstock by a physical vapor transport (PVT) manner.

Disclosed is a SiC crystal growth apparatus including a reaction cell provided in a vacuum furnace such that SiC crystals are grown in the reaction cell, the reaction cell is configured such that a source is disposed in a lower region of an area defined by a crucible and a cover and a seed is provided below the cover, and a filter configured to filter out particles from gas supplied from the source is provided between the seed and the source, the filter includes a first layer, a second layer, and a third layer disposed in a direction from the source to the seed and spaced apart from each other, first through holes, second through holes, and third through holes are formed through the first layer, the second layer, and the third layer, respectively, and centers of the first to third holes form a face-centered cubic structure.