A method of manufacturing a silicon carbide ingot, includes a preparing operation of adjusting internal space of a reactor in which silicon carbide raw materials and a seed crystal are disposed to have a high vacuum atmosphere, a proceeding operation of injecting an inert gas into the internal space, heating the internal space by moving a heater surrounding the reactor to induce the silicon carbide raw materials to sublimate, and growing the silicon carbide ingot on the seed crystal, and a cooling operation of cooling the temperature of the internal space to room temperature. The moving of the heater has a relative position which becomes more distant at a rate of 0.1 mm/hr to 0.48 mm/hr based on the seed crystal.

A method of manufacturing a silicon carbide ingot, includes a preparing operation of adjusting internal space of a reactor in which silicon carbide raw materials and a seed crystal are disposed to have a high vacuum atmosphere, a proceeding operation of injecting an inert gas into the internal space, heating the internal space by moving a heater surrounding the reactor to induce the silicon carbide raw materials to sublimate, and growing the silicon carbide ingot on the seed crystal, and a cooling operation of cooling the temperature of the internal space to room temperature. The moving of the heater has a relative position which becomes more distant at a rate of 0.1 mm/hr to 0.48 mm/hr based on the seed crystal.

A silicon carbide single crystal manufacturing apparatus includes a crucible constituted by a crucible body and a crucible lid and a base having a crucible lid side surface supported by the lower surface of the crucible lid, and a seed crystal mounting surface on which the seed crystal is mounted and which is a surface on the opposite side of the crucible lid side surface, wherein the base is made of graphite material, the area of the seed crystal mounting surface is larger than the area of the crucible lid side surface, and the base has at least of a portion in which the cross-sectional area orthogonal to the vertical direction connecting the crucible lid side surface and the seed crystal mounting surface is gradually reduced, and a portion that is getting smaller gradually, from the surface of the seed crystal mounting surface toward the crucible lid side surface.

Stabilized, high-doped silicon carbide is described. A silicon carbide crystal is grown on a substrate using chemical vapor deposition so that the silicon carbide crystal includes a dopant and the strain compensating component. The strain compensating component can be an isoelectronic element and/or an element with the same majority carrier type as the dopant. The silicon carbide crystal can then be cut into silicon carbide wafers. In some embodiments, the dopant is n-type and the strain compensating component is selected from a group comprising germanium, tin, arsenic, phosphorus, and combinations thereof. In some embodiments, the strain compensating component comprises germanium and the dopant is nitrogen.

Method for depositing an organic or hybrid organic/inorganic perovskite layer on a substrate comprising the following steps: a) providing a substrate and an organic or hybrid organic/inorganic target, b) positioning the substrate and the target, in a close space sublimation furnace, c) depositing an organic or hybrid organic/inorganic perovskite layer on the substrate by sublimation of the target, the temperature difference between the target and the substrate being, preferably, comprised between 50° C. and 350° C., even more preferentially between 50° C. and 200° C., the thickness of the deposited organic or hybrid organic/inorganic perovskite layer being, preferably, comprised between 50 nm and 5000 μm.

In an embodiment, a method includes providing a substrate and epitaxially growing a semiconductor layer of a semiconductor material on the substrate using physical vapor deposition, wherein the semiconductor material has a tetragonal phase, wherein the semiconductor material has the general formula: (In.sub.1-xM.sub.x)(Te.sub.1-yZ.sub.y), and wherein M=Ga, Zn, Cd, Hg, Tl, Sn, Pb, Ge, or combinations thereof, Z═As, S, Se, Sb, or combinations thereof, x=0-0.1, and y=0-0.1, or wherein the semiconductor material has the general formula: (In.sub.1-xTl.sub.x)(Te.sub.1-ySe.sub.y) with x=0-1 and y=0-1.

A method includes a graphene precursor formation process of: heating a SiC substrate to sublimate Si atoms in a Si surface of the SiC substrate so that a graphene precursor is formed; and stopping the heating before the graphene precursor is covered with graphene. A SiC substrate to be treated in the graphene precursor formation process is provided with a step including a plurality of molecular layers. The step has a stepped structure in which a molecular layer whose C atom has two dangling bonds is disposed closer to the surface than a molecular layer whose C atom has one dangling bond.

Provided are a method for etching and growing a semiconductor substrate in the same device system, and a device therefor. The method for manufacturing a semiconductor substrate includes a first heating step of heating a heat treatment space which contains a semiconductor substrate and a transmission/reception body that transports atoms between the semiconductor substrate and the transmission/reception body such that a temperature gradient is formed between the semiconductor substrate and the transmission/reception body, and a second heating step of heating the same with the temperature gradient being vertically inverted.

Provided is a semiconductor substrate manufacturing device which is capable of uniformly heating the surface of a semiconductor substrate that has a relatively large diameter or major axis. The semiconductor substrate manufacturing device includes a container body for accommodating a semiconductor substrate and a heating furnace that has a heating chamber which accommodates the container body, and the heating furnace has a heating source in a direction intersecting the semiconductor substrate to be disposed inside the heating chamber.

In a state in which a SiC container (3) of a material including polycrystalline SiC is housed in a TaC container (2) of a material including TaC and in which an underlying substrate (40) is housed in the SiC container (3), the TaC container (2) is heated in an environment where a temperature gradient occurs in such a manner that inside of the TaC container (2) is at a Si vapor pressure. Consequently, C atoms sublimated by etching of the inner surface of the SiC container (3) are bonded to Si atoms in an atmosphere so that an epitaxial layer (41) of single crystalline 3C-SiC thereby grows on the underlying substrate (40).