In various embodiments, aluminum nitride single crystals have large crystal augmentation parameters and may therefore be suitable for the fabrication of numerous, large single-crystal aluminum nitride substrates having high crystalline quality. The aluminum nitride single crystals may have large boule masses and volumes.

In various embodiments, aluminum nitride single crystals have large crystal augmentation parameters and may therefore be suitable for the fabrication of numerous, large single-crystal aluminum nitride substrates having high crystalline quality. The aluminum nitride single crystals may have large boule masses and volumes.

The present disclosure relates to heaters and plasma generators for gas activation, and related chamber components, methods, and processing chambers for semiconductor manufacturing. The processing chamber includes a chamber body comprising a flow module, a window, one or more heat sources, a substrate support, and a plasma generator. The window and the chamber body at least partially defining a processing volume. The one or more heat sources are operable to heat the processing volume. The substrate support is disposed in the processing volume. The plasma generator disposed at least partially around the processing volume. The window further includes a flange. The flange includes an opaque material. An induction coil is embedded in the opaque material of the flange.

The present disclosure relates to heaters and plasma generators for gas activation, and related chamber components, methods, and processing chambers for semiconductor manufacturing. The processing chamber includes a chamber body comprising a flow module, a window, one or more heat sources, a substrate support, and a plasma generator. The window and the chamber body at least partially defining a processing volume. The one or more heat sources are operable to heat the processing volume. The substrate support is disposed in the processing volume. The plasma generator disposed at least partially around the processing volume. The window further includes a flange. The flange includes an opaque material. An induction coil is embedded in the opaque material of the flange.

There are provided a large-area single-crystal silver thin-film structure using a single-crystal copper thin-film buffer layer, and a method for manufacturing same. The large-area single-crystal silver thin-film structure includes a transparent substrate; a single-crystal copper thin-film buffer layer formed by deposition on the transparent substrate; and a single-crystal silver thin-film layer deposited on the single-crystal copper thin-film buffer layer and having a certain directionality.

There are provided a large-area single-crystal silver thin-film structure using a single-crystal copper thin-film buffer layer, and a method for manufacturing same. The large-area single-crystal silver thin-film structure includes a transparent substrate; a single-crystal copper thin-film buffer layer formed by deposition on the transparent substrate; and a single-crystal silver thin-film layer deposited on the single-crystal copper thin-film buffer layer and having a certain directionality.

Spinel and gallium oxide (Ga.sub.2O.sub.3) p-n heteroepitaxial interfaces and methods of making the same are presented. In embodiments, a method of manufacturing spinel structures includes depositing, via off-axis sputtering, an epitaxial layer of p-type spinel on a gallium oxide (Ga.sub.2O.sub.3) substrate, thereby creating a p-n heteroepitaxial interface between the p-type spinel and the Ga.sub.2O.sub.3 substrate. In implementations, a semiconductor device includes a Ga.sub.2O.sub.3 substrate; a p-type spinel epitaxial layer formed directly on a surface of the Ga.sub.2O.sub.3 substrate, thereby forming a p-n heteroepitaxial interface; and electrodes.

Spinel and gallium oxide (Ga.sub.2O.sub.3) p-n heteroepitaxial interfaces and methods of making the same are presented. In embodiments, a method of manufacturing spinel structures includes depositing, via off-axis sputtering, an epitaxial layer of p-type spinel on a gallium oxide (Ga.sub.2O.sub.3) substrate, thereby creating a p-n heteroepitaxial interface between the p-type spinel and the Ga.sub.2O.sub.3 substrate. In implementations, a semiconductor device includes a Ga.sub.2O.sub.3 substrate; a p-type spinel epitaxial layer formed directly on a surface of the Ga.sub.2O.sub.3 substrate, thereby forming a p-n heteroepitaxial interface; and electrodes.

A nitride semiconductor substrate (11, 21) includes: a substrate (2); and an AlN-containing film (100, 200) provided above the substrate (2). A thickness of the AlN-containing film (100, 200) is at most 10000 nm, and a threading dislocation density of the AlN-containing film (100, 200) is at most 210.sup.8 cm.sup.2.

In order to form a homoepitaxial thin film on the surface of a substrate having LiNbO.sub.3 single crystal or LiTaO.sub.3 single crystal surface, a composition identical to that of the single crystal is formed by a high-frequency sputtering method on the surface of the substrate having LiNbO.sub.3 single crystal or LiTaO.sub.3 single crystal surface. Manufacturing apparatus for a homoepitaxial thin film includes a chamber and a high-frequency power source that supplies high-frequency power to a target disposed inside the chamber. Sputtering electrode is arranged such that a surface normal of the target is offset with respect to the substrate located at a film formation position, and is also arranged such that the surface normal of the target is inclined at an angle of 15 to 75 with respect to a surface normal of the substrate.