A method for manufacturing a crystal film including: forming a Zr film on a substrate heated to 700? C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal; forming a ZrO.sub.2 film on said Zr film on a substrate heated to 700? C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and forming a Y.sub.2O.sub.3 film on said ZrO.sub.2 film on a substrate heated to 700? C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.

A method for manufacturing a crystal film including: forming a Zr film on a substrate heated to 700? C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal; forming a ZrO.sub.2 film on said Zr film on a substrate heated to 700? C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and forming a Y.sub.2O.sub.3 film on said ZrO.sub.2 film on a substrate heated to 700? C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.

Various embodiments may provide a low temperature (i.e., less than 850 C.) method of Silicon-Germanium (SiGe) on sapphire (Al.sub.2O.sub.3) (SiGe/sapphire) growth that may produce a single crystal film with less thermal loading effort to the substrate than conventional high temperature (i.e., temperatures above 850 C.) methods. The various embodiments may alleviate the thermal loading requirement of the substrate, which in conventional high temperature (i.e., temperatures above 850 C.) methods had surface temperatures within the range of 850 C.-900 C. The various embodiments may provide a new thermal loading requirement of the sapphire substrate for growing single crystal SiGe on the sapphire substrate in the range of about 450 C. to about 500 C.

Various embodiments may provide a low temperature (i.e., less than 850 C.) method of Silicon-Germanium (SiGe) on sapphire (Al.sub.2O.sub.3) (SiGe/sapphire) growth that may produce a single crystal film with less thermal loading effort to the substrate than conventional high temperature (i.e., temperatures above 850 C.) methods. The various embodiments may alleviate the thermal loading requirement of the substrate, which in conventional high temperature (i.e., temperatures above 850 C.) methods had surface temperatures within the range of 850 C.-900 C. The various embodiments may provide a new thermal loading requirement of the sapphire substrate for growing single crystal SiGe on the sapphire substrate in the range of about 450 C. to about 500 C.

There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production.

A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production.

A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

An apparatus includes a substrate, a plurality of layers overlying the substrate, a hexagonal close packed (hcp) translating layer, and an hcp layer overlying the hcp translating layer. A top layer of the multiple layers has a face centered cube (fcc) lattice structure. The hcp translating layer overlies the top layer. The hcp translating layer interfaces between the top layer and the hcp layer, and columnar structure of the top layer aligns with the hcp layer through the hcp translating layer.

There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

According to the embodiment, a radiation detector includes a photoelectric conversion substrate converting light to an electrical signal and a scintillator layer being in contact with the photoelectric conversion substrate and converting externally incident radiation to light. The scintillator layer is made of a phosphor containing Tl as an activator in CsI, which is a halide. A concentration of the activator in the phosphor is 1.6 mass %0.4 mass %, and a concentration distribution of the activator in an in-plane direction and a film thickness direction is within 15%.