A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.

A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.

A method and apparatus for reducing cool-down times within a cool-down chamber are described herein. The method and apparatus include a process chamber, a transfer chamber, a dual-handled transfer robot within the transfer chamber, and a cool-down chamber. The dual-handled transfer robot it utilized to transfer a substrate between the process chamber and the cool-down chamber. The amount of time the substrate is disposed on the dual-handled transfer robot before being moved into the cool-down chamber is multiplied by a correction factor and subtracted from an original cool down time to achieve an adjusted cool down time. The adjusted cool down time is determined separately for each substrate being cooled within the cool-down chamber.

A III-V-, IV-IV- or II-VI-compound single crystal comprising III-, IV- or II-precipitates and/or unstoichiometrical III-V-, IV-VI-, or II-VI-inclusions, wherein concentration of the respective precipitates and/or inclusions is no more than 1×10.sup.4 cm.sup.−3

A III-V-, IV-IV- or II-VI-compound single crystal comprising III-, IV- or II-precipitates and/or unstoichiometrical III-V-, IV-VI-, or II-VI-inclusions, wherein concentration of the respective precipitates and/or inclusions is no more than 1×10.sup.4 cm.sup.−3

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

Provided is a re-operation preparation process of a reaction chamber in which epitaxial growth is performed on a wafer. The re-operation preparation process of the reaction chamber includes disposing a susceptor provided in the reaction chamber and on which the wafer is seated at a preset first position and setting a flow rate of a hydrogen gas introduced through a main valve so that the flow rate is greater than that of a hydrogen gas introduced through a slit valve and moving the susceptor to a preset second position and setting an amount of hydrogen gas introduced through the main valve while the susceptor is maintained at the second position so that the amount of hydrogen gas is less than that of hydrogen gas introduced through the slit valve. Thus, moisture and contaminants stagnant in a lower portion of the reaction chamber may be smoothly discharged along a flow of the hydrogen gas toward a discharge hole.

Provided is a re-operation preparation process of a reaction chamber in which epitaxial growth is performed on a wafer. The re-operation preparation process of the reaction chamber includes disposing a susceptor provided in the reaction chamber and on which the wafer is seated at a preset first position and setting a flow rate of a hydrogen gas introduced through a main valve so that the flow rate is greater than that of a hydrogen gas introduced through a slit valve and moving the susceptor to a preset second position and setting an amount of hydrogen gas introduced through the main valve while the susceptor is maintained at the second position so that the amount of hydrogen gas is less than that of hydrogen gas introduced through the slit valve. Thus, moisture and contaminants stagnant in a lower portion of the reaction chamber may be smoothly discharged along a flow of the hydrogen gas toward a discharge hole.

A crucible device includes a heating chamber, at least a first crucible in which a first crystal is growable, and at least a second crucible in which a second crystal is growable. The first crucible and the second crucible are arranged within the heating chamber spaced apart from each other along a horizontal and vertical and any orientational direction. The crucible device further comprises a heating system arranged within the heating chamber, wherein the heating system is configured for adjusting a temperature along the horizontal and vertical and any orientational directions.