There is provided a semiconductor manufacturing device that supplies a source gas to a substrate installed in a reaction furnace and performs film formation processing to the substrate, including: a storage vessel which is disposed in the reaction furnace and which stores a metal raw material as a base of the source gas; an auxiliary vessel which is disposed at an upper side of the storage vessel in the reaction furnace and which is a bottomed vessel having an inlet port for the metal raw material; a connection pipe through which an outlet port for the metal raw material formed on the auxiliary vessel and an inside of the storage vessel are communicated with each other; a sealing plug for sealing the outlet port so as to be opened and closed freely; and heater units that heat an inside of the reaction furnace to a predetermined temperature so as to melt the metal raw material in the auxiliary vessel and the metal raw material in the storage vessel, and to a predetermined temperature required for film formation processing performed to the substrate.

A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.

A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.

An epitaxial growth device includes; a chamber; a susceptor; a supporting shaft, having a main column located coaxially with the center of the susceptor and supporting arms; and a lift pin, at least the surface layer region of the lift pin is made of a material having a hardness lower than the susceptor, the lift pin has a straight trunk part upper region configured to pass through the through-hole of the susceptor and having a surface roughness of from not less than 0.1 μm to not more than 0.3 μm, and the lift pin has a straight trunk part lower region configured to pass through the through-hole of the supporting arm and having a surface roughness of from not less than 1 μm to not more than 10 μm.

An epitaxial growth device includes; a chamber; a susceptor; a supporting shaft, having a main column located coaxially with the center of the susceptor and supporting arms; and a lift pin, at least the surface layer region of the lift pin is made of a material having a hardness lower than the susceptor, the lift pin has a straight trunk part upper region configured to pass through the through-hole of the susceptor and having a surface roughness of from not less than 0.1 μm to not more than 0.3 μm, and the lift pin has a straight trunk part lower region configured to pass through the through-hole of the supporting arm and having a surface roughness of from not less than 1 μm to not more than 10 μm.

The reaction chamber (100) is designed for a reactor (100) for deposition of layers of semiconductor material on substrates; it comprises a tube (110) and an injector (20) and a holder (30); the tube (110) is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone; the injector (20) is arranged to inject precursor gases into the reaction and deposition zone; the holder (30) is arranged to support a substrate in the reaction and deposition zone during deposition processes; graphite susceptor elements (10, 40, 50) are located inside the tube (110) for heating the reaction and deposition zone and components inside the reaction and deposition zone; an inductor system (60, 70) is located outside the tube (110) for providing energy to the susceptor elements (10, 40, 50) by electromagnetic induction; a rotating element (80) in the form of a cylindrical or prismatic tube is located inside the reaction and deposition zone and surrounds the injector (20).

The present disclosure provides a semiconductor deposition monitoring device comprising a supporting table, a chamber, a lamp, an optical sensor, a conduit, a plurality of sensors in the conduit, and a heat exchanger. The supporting table supports a deposition target wafer on which a deposition material is deposited. The chamber comprises an upper dome and a lower dome. The lamp emits light to the chamber. The optical sensor receives the irradiated light and measures the deposition material formed in the chamber. The conduit has an inlet conduit through which air is injected into the chamber and an outlet conduit through which the air is discharged from the chamber. The plurality of sensors sense information of the air. The sensed information may be used to control the heat exchanger.

Provided are a GaN crystal used in a substrate for a nitride semiconductor device having a horizontal device structure such as GaN-HEMT, and a substrate used for production of a nitride semiconductor device having a horizontal device structure such as GaN-HEMT. The Gab crystal has a (0001) surface having an area of not less than 5 cm.sup.2, the (0001) surface having an inclination of not more than 10° with respect to the (0001) crystal plane, wherein the Fe concentration is not less than 5×10.sup.17 atoms/cm.sup.3 and less than 1×10.sup.9 atoms/cm.sup.3, and wherein the total donor impurity concentration is less than 5×10.sup.16 atoms/cm.sup.3.

A method for making a monocrystalline structure is disclosed. The method includes depositing a first volume of a material on a substrate to create a first crystal seed and depositing a second volume of the material towards the substrate to nucleate with the first crystal seed to create a first initial epitaxial structure.

A reaction apparatus contacts a process gas on a semiconductor wafer during a wafering process. The semiconductor wafer defines a center region. The reaction apparatus includes an upper dome, a lower dome, a shaft, and a cap. The lower dome is attached to the upper dome, and the upper dome and the lower dome define a reaction chamber. The cap is positioned on the shaft within the reaction chamber for reducing heat absorbed by the center region of the semiconductor wafer. The cap is attached to a first end of the shaft. The cap includes a tube and a disc. The tube defines a tube diameter larger than a shaft diameter of the shaft. The tube circumscribes the first end of the shaft. The disc is attached to the tube and is positioned to block radiant heat from heating the center region of the semiconductor wafer.