A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.

A method for growing a nitride film in accordance with an exemplary embodiment includes charging a substrate into a growth space, and growing a nitride film on the substrate, wherein the growing of a nitride film may include reacting a first reaction gas with a source raw material to supply a generated gas to the growth space, supplying a second reaction gas to the growth space, and supplying an oxygen-containing gas and a hydrogen-containing gas to the growth space. Accordingly, according to exemplary embodiments, even when a nitride film is formed thin, it is possible to planarize the upper surface of the nitride film. Accordingly, it is possible to reduce process time required to grow or form the nitride film until the upper surface thereof is planarized, and thus, there is an effect of improving the production rate.

Proposed is a manufacturing method of a high-quality β-Ga.sub.2O.sub.3 thin film using a high-quality β-Ga.sub.2O.sub.3 thin film manufacturing apparatus based on halide vapor phase epitaxy (HVPE) growth. The apparatus includes a reaction gas generating unit in which a chlorine-based gas and Ga in a source zone react to generate GaClx, a dopant gas supply unit, an additional chlorine-based gas supply unit for supplying an additional chlorine-based gas in a source tube, oxygen-based gas supply units, and a susceptor unit supporting a substrate on which a Ga.sub.2O.sub.3 thin film is to be formed. During the epitaxial growth, the additional hydrogen chloride (HCl) gas is supplied to reduce the pre-reaction between precursors, and a movement distance to the susceptor can is increased to increase growth rate and growth speed to control the crystallinity. Thus, high-quality epitaxial growth and a high production yield can be achieved.

Proposed is a manufacturing method of a high-quality β-Ga.sub.2O.sub.3 thin film using a high-quality β-Ga.sub.2O.sub.3 thin film manufacturing apparatus based on halide vapor phase epitaxy (HVPE) growth. The apparatus includes a reaction gas generating unit in which a chlorine-based gas and Ga in a source zone react to generate GaClx, a dopant gas supply unit, an additional chlorine-based gas supply unit for supplying an additional chlorine-based gas in a source tube, oxygen-based gas supply units, and a susceptor unit supporting a substrate on which a Ga.sub.2O.sub.3 thin film is to be formed. During the epitaxial growth, the additional hydrogen chloride (HCl) gas is supplied to reduce the pre-reaction between precursors, and a movement distance to the susceptor can is increased to increase growth rate and growth speed to control the crystallinity. Thus, high-quality epitaxial growth and a high production yield can be achieved.

A layered body includes: a plate-like supporting body having a supporting main surface; and a plurality of projection portions disposed on the supporting main surface, each of the plurality of projection portions being composed of a group III nitride and having a dislocation density of not more than 1×10.sup.8 cm.sup.−3. The projection portion preferably has a polygonal planar shape. The projection portion preferably has a plate-like shape. Preferably, each of the plurality of projection portions has a main surface opposite to the supporting body and corresponding to a {0001} plane of the group III nitride of the projection portions, and the adjacent projection portions of the plurality of projection portions have end surfaces facing each other and corresponding to a {11-20} plane of the group III nitride of the projection portions.

A layered body includes: a plate-like supporting body having a supporting main surface; and a plurality of projection portions disposed on the supporting main surface, each of the plurality of projection portions being composed of a group III nitride and having a dislocation density of not more than 1×10.sup.8 cm.sup.−3. The projection portion preferably has a polygonal planar shape. The projection portion preferably has a plate-like shape. Preferably, each of the plurality of projection portions has a main surface opposite to the supporting body and corresponding to a {0001} plane of the group III nitride of the projection portions, and the adjacent projection portions of the plurality of projection portions have end surfaces facing each other and corresponding to a {11-20} plane of the group III nitride of the projection portions.

An apparatus for manufacturing a group III nitride single crystal including: a reaction vessel including a reaction area, wherein in the reaction area, a group III source gas and a nitrogen source gas are reacted such that a group III nitride crystal is grown on a substrate; a susceptor arranged in the reaction area and supporting the substrate; a group III source gas supply nozzle supplying the group III source gas to the reaction area; and a nitrogen source gas supply nozzle supplying the nitrogen source gas to the reaction area, wherein the nitrogen source gas supply nozzle is configured to supply the nitrogen source gas and at least one halogen-based gas selected from the group consisting of a hydrogen halide gas and a halogen gas to the reaction area.

The present disclosure generally relates to process chambers for semiconductor processing. In one embodiment, a growth monitor for substrate processing is provided. The growth monitor includes a sensor holder and a crystal disposed in the sensor holder having a front side and a back side. An opening is formed in the sensor holder exposing a front side of the crystal. A gas inlet is disposed through the sensor holder to a plenum formed by the back side of the crystal and the sensor holder. A gas outlet is fluidly coupled to the plenum.

Embodiments of mechanisms for processing a semiconductor wafer are provided. A method for processing a wafer includes providing a wafer process apparatus. The wafer process apparatus includes a chamber and a stage positioned in the chamber for supporting the semiconductor wafer. The method also includes supplying a process gas to the semiconductor wafer via a discharged assembly that is adjacent to the stage. The discharged assembly includes a discharged passage configured without a vertical flow path section.

Embodiments of mechanisms for processing a semiconductor wafer are provided. A method for processing a wafer includes providing a wafer process apparatus. The wafer process apparatus includes a chamber and a stage positioned in the chamber for supporting the semiconductor wafer. The method also includes supplying a process gas to the semiconductor wafer via a discharged assembly that is adjacent to the stage. The discharged assembly includes a discharged passage configured without a vertical flow path section.