The present invention relates to a Ga.sub.2O.sub.3 crystal film deposition method according to HVPE, a deposition apparatus, and a Ga.sub.2O.sub.3 crystal film-deposited substrate using the same. According to an embodiment of the present invention, a Ga.sub.2O.sub.3 crystal film deposition method, which includes a first step of supplying GaCl gas onto a single-crystal semiconductor substrate via a central supply channel and a second step of supplying oxygen and HCl gas onto the single-crystal semiconductor substrate onto which the GaCl gas is supplied, is provided.

The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10.sup.−4 rlu or less.

A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10.sup.−4 rlu or less.

A method comprises transporting a first stream of a carrier gas to a delivery device that contains a liquid precursor compound. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream after emanating from the delivery device and the second stream are combined to form a third stream, such that the dew point of the vapor of the liquid precursor compound in the third stream is lower than the temperature of the plumbing that transports the vapor to a CVD reactor or a plurality of CVD reactors. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.

A method comprises transporting a first stream of a carrier gas to a delivery device that contains a liquid precursor compound. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream after emanating from the delivery device and the second stream are combined to form a third stream, such that the dew point of the vapor of the liquid precursor compound in the third stream is lower than the temperature of the plumbing that transports the vapor to a CVD reactor or a plurality of CVD reactors. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.

The invention concerns a reactor for chemical vapour deposition from first and second precursor gases, the reactor comprising: —a chamber including top and bottom walls and a side wall linking the top and bottom walls, —a support intended for receiving at least one substrate, mounted inside the chamber, and —at least one system for injecting precursor gases, the system comprising an injection head including at least one nozzle for supplying the first precursor gas (41) in a main direction of axis A-A′, the at least one nozzle including: a precursor gas supply conduit (321), and an outlet member (322) generating a substantially annular 43 vortex flow (44) around axis A-A′.

The invention concerns a reactor for chemical vapour deposition from first and second precursor gases, the reactor comprising: —a chamber including top and bottom walls and a side wall linking the top and bottom walls, —a support intended for receiving at least one substrate, mounted inside the chamber, and —at least one system for injecting precursor gases, the system comprising an injection head including at least one nozzle for supplying the first precursor gas (41) in a main direction of axis A-A′, the at least one nozzle including: a precursor gas supply conduit (321), and an outlet member (322) generating a substantially annular 43 vortex flow (44) around axis A-A′.

A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.