A semiconductor silicon wafer manufacturing method is provided, where P aggregate defects and SF in an epitaxial layer can be suppressed. A silicon wafer substrate cut from a monocrystal ingot is doped with phosphorus and has a resistivity of 1.05 mΩ.Math.cm or less and a concentration of solid-solution oxygen of 0.9×10.sup.18 atoms/cm.sup.3. The method includes steps of mirror-polishing substrates and heat treatment, where after the mirror-polishing step, the substrate is kept at a temperature from 700° C. to 850° for 30 to 120 minutes, then after the temperature rise, kept at a temperature from 100° C. to 1250° for 30 to 120 minutes, and after cooling, kept at a temperature from 700° C. to 450° C. for less than 10 minutes as an experience time. The heat treatment step is performed in a mixture gas of hydrogen and argon. The method includes an epitaxial layer deposition step to a thickness of 1.3 μm to 10.0 μm.

Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

The present disclosure provides an epitaxial device and a gas intake structure configured for the epitaxial device. The epitaxial device includes a chamber, a submount, a gas intake structure, and an exhaust structure. The gas intake structure includes: a plurality of first gas intake passages configured to provide a first process gas containing a gas for an epitaxial reaction to a to-be-processed surface along a first direction, the first direction being parallel to the to-be-processed surface; and two second gas intake passages that are arranged at intervals along a second direction, and correspond to two adjustment areas adjacent to edges on both sides of the to-be-processed surface respectively, where at least one first gas intake passage is disposed between the two second gas intake passages, each second gas intake passage provides a second process gas to the corresponding adjustment area along the first direction, and the second process gas is configured to adjust a concentration of the gas for the epitaxial reaction flowing through the adjustment areas. The epitaxial device and the gas intake structure provided by the embodiments of the present disclosure improve uniformity of thickness distribution of an epitaxial layer formed on the entire to-be-processed surface.

Methods and systems for in-situ and selective area etching of surfaces or layers, and high-speed growth of gallium nitride (GaN), by organometallic chlorine (Cl) precursors, are described herein. In one aspect, a method can include exposing a GaN layer or surface to an organometallic Cl precursor within a reactor under conditions sufficient to etch the layer or surface, thereby etching the GaN layer or surface. In another aspect, a method of growing GaN can include inputting a set of reactants comprising at least trimethylgallium (TMGa) and anunonia into an OMVPE reactor; inputting an organometallic Cl precursor into the OMVPE reactor; and reacting the Cl precursor with the TM Ga and with the NH3 to deposit GaN by organometallic vapor phase epitaxy.

Methods and systems for in-situ and selective area etching of surfaces or layers, and high-speed growth of gallium nitride (GaN), by organometallic chlorine (Cl) precursors, are described herein. In one aspect, a method can include exposing a GaN layer or surface to an organometallic Cl precursor within a reactor under conditions sufficient to etch the layer or surface, thereby etching the GaN layer or surface. In another aspect, a method of growing GaN can include inputting a set of reactants comprising at least trimethylgallium (TMGa) and anunonia into an OMVPE reactor; inputting an organometallic Cl precursor into the OMVPE reactor; and reacting the Cl precursor with the TM Ga and with the NH3 to deposit GaN by organometallic vapor phase epitaxy.

Organic-inorganic hybrid perovskite has demonstrated tremendous potential for the next generation of electronic and optoelectronic devices due to their remarkable carrier dynamics. However, current studies of electronic and optoelectronic devices have been focused on polycrystalline materials, due to the challenges in synthesizing device compatible high quality single crystalline materials. Here, we firstly report the epitaxial growth of single crystal hybrid perovskites with controlled locations, morphologies, and orientations, using combined strategies of lithography, homoepitaxy, and low temperature solution method. The crystals grow following a layer-by-layer model under controlled growth parameters. The process is robust and can be readily scaled up. The as-grown epitaxial single crystals were integrated in an array of light emitting diodes, each crystal as a pixel with enhanced quantum efficiencies. This capability opens up new opportunities for designing and fabricating a diverse range of high performance electronic and optoelectronic devices using crystalline hybrid perovskites.

Organic-inorganic hybrid perovskite has demonstrated tremendous potential for the next generation of electronic and optoelectronic devices due to their remarkable carrier dynamics. However, current studies of electronic and optoelectronic devices have been focused on polycrystalline materials, due to the challenges in synthesizing device compatible high quality single crystalline materials. Here, we firstly report the epitaxial growth of single crystal hybrid perovskites with controlled locations, morphologies, and orientations, using combined strategies of lithography, homoepitaxy, and low temperature solution method. The crystals grow following a layer-by-layer model under controlled growth parameters. The process is robust and can be readily scaled up. The as-grown epitaxial single crystals were integrated in an array of light emitting diodes, each crystal as a pixel with enhanced quantum efficiencies. This capability opens up new opportunities for designing and fabricating a diverse range of high performance electronic and optoelectronic devices using crystalline hybrid perovskites.

Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.