An optoelectronic device includes a flexible substrate, a cerium oxide (CeO.sub.2) layer arranged on the flexible substrate, a single crystal β-III-oxide layer arranged on the CeO.sub.2 layer, and a metallic contact layer arranged on the single crystal β-III-oxide layer.

An optoelectronic device includes a flexible substrate, a cerium oxide (CeO.sub.2) layer arranged on the flexible substrate, a single crystal β-III-oxide layer arranged on the CeO.sub.2 layer, and a metallic contact layer arranged on the single crystal β-III-oxide layer.

A method of making a Group III nitride material that includes: providing a substrate; patterning a template on the substrate; depositing a layer of a material comprising aluminum, gallium and nitrogen on the substrate at a temperature; annealing the layer comprising aluminum, gallium and nitrogen; epitaxially growing Distributed Bragg Reflectors to form a structure on the substrate that comprises microcavities; and etching micropillars in the structure for at least 30 seconds with a heated basic solution is described.

The present disclosure relates to a method for growing and doping a strained diamond based on a chemical vapor deposition (CVD) method. The method comprises: depositing a gradient buffer layer and a relaxation layer on a substrate layer in sequence by the CVD method; and finally, depositing a CVD strained diamond layer on the relaxation layer and performing doping by the CVD method. According to the method, a lattice constant of the relaxation layer prepared by utilizing the CVD method is greater than a lattice constant of the diamond, so that a diamond generates a stretching strain. In growing and doping processes, the CVD strained diamond is in a stretching strain state. Therefore, a formation energy of a doped element is low, and it is easy to dope the diamond, so that a doping concentration of the diamond is high.

The present disclosure relates to a method for growing and doping a strained diamond based on a chemical vapor deposition (CVD) method. The method comprises: depositing a gradient buffer layer and a relaxation layer on a substrate layer in sequence by the CVD method; and finally, depositing a CVD strained diamond layer on the relaxation layer and performing doping by the CVD method. According to the method, a lattice constant of the relaxation layer prepared by utilizing the CVD method is greater than a lattice constant of the diamond, so that a diamond generates a stretching strain. In growing and doping processes, the CVD strained diamond is in a stretching strain state. Therefore, a formation energy of a doped element is low, and it is easy to dope the diamond, so that a doping concentration of the diamond is high.

A method of producing transition-metal dichalcogenide crystals includes providing a silicon substrate having a phosphine-treated surface, exposing the phosphine-treated surface of the silicon substrate to a vapor containing a transition metal, and exposing the phosphine-treated surface of the silicon substrate to a vapor containing a chalcogen. A crystal of the transition-metal and the chalcogen is formed on the phosphine-treated surface of the silicon substrate to produce a transition-metal dichalcogenide crystal by chemical vapor deposition.

A method of producing transition-metal dichalcogenide crystals includes providing a silicon substrate having a phosphine-treated surface, exposing the phosphine-treated surface of the silicon substrate to a vapor containing a transition metal, and exposing the phosphine-treated surface of the silicon substrate to a vapor containing a chalcogen. A crystal of the transition-metal and the chalcogen is formed on the phosphine-treated surface of the silicon substrate to produce a transition-metal dichalcogenide crystal by chemical vapor deposition.

The present invention provides a preparation method of a gallium nitride single crystal based on a ScAlMgO.sub.4 substrate, comprising following steps: (1) providing a ScAlMgO.sub.4 substrate; (2) growing a buffer layer on a surface of the ScAlMgO.sub.4 substrate; (3) annealing the buffer layer; (4) growing a GaN crystal on the buffer layer; (5) performing cooling, so that the GaN crystal is automatically peeled off from the ScAlMgO.sub.4 substrate. The present invention does not need to use a complex MOCVD process for GaN deposition and preprocessing to make a mask or a separation layer, which effectively reduces production costs; compared with traditional substrates such as sapphire, it has higher quality and a larger radius of curvature, and will not cause a problem of OFFCUT non-uniformity for growing GaN over 4 inches; finally, the present invention can realize continuous growth into a crystal bar with a thickness of more than 5 mm, which further reduces the costs.

An electrical device includes an aluminum nitride passivation layer for a mercury cadmium telluride (Hg.sub.1-xCd.sub.xTe) (MCT) semiconductor layer of the device. The AlN passivation layer may be an un-textured amorphous-to-polycrystalline film that is deposited onto the surface of the MCT in its as-grown state, or overlying the MCT after the MCT surface has been pre-treated or partially passivated, in this way fully passivating the MCT. The AlN passivation layer may have a coefficient of thermal expansion (CTE) that closely matches the CTE of the MCT layer, thereby reducing strain at an interface to the MCT. The AlN passivation layer may be formed with a neutral inherent (residual) stress, provide mechanical rigidity, and chemical resistance to protect the MCT.

Embodiments of the present disclosure generally relate to an integrated substrate processing system for cleaning a substrate surface and subsequently performing an epitaxial deposition process thereon. A processing system includes a film formation chamber, a transfer chamber coupled to the film formation chamber, and an oxide removal chamber coupled to the transfer chamber, the oxide removal chamber having a substrate support. The processing system includes a controller configured to introduce a process gas mixture into the oxide removal chamber, the process gas mixture including a fluorine-containing gas and a vapor including at least one of water, an alcohol, an organic acid, or combinations thereof. The controller is configured to expose a substrate positioned on the substrate support to the process gas mixture, thereby removing an oxide film from the substrate.