A diamond crystal substrate has a substrate surface that is one crystal plane among (100), (111), and (110) and that has atomic steps and terraces structure at an off-angle of 7° or less excluding 0°.

An epitaxial wafer according to the present disclosure includes: a substrate; a buffer layer formed of a crystal having the composition formula represented by Al.sub.xGa.sub.yIn.sub.zN (x+y+z=1, y>0) on the substrate; a back-barrier layer formed of a crystal having the composition formula represented by Al.sub.xGa.sub.yIn.sub.zN (x+y+z=1, y>0, z>0) on the buffer layer; a channel layer formed of a crystal having the composition formula represented by Al.sub.xGa.sub.yIn.sub.zN (x+y+z=1, y>0) on the back-barrier layer; and an electron-supply layer formed of a crystal having the composition formula represented by Al.sub.xGa.sub.yIn.sub.zN (x+y+z=1, x>0) on the channel layer. The channel layer is constituted with an upper channel layer underneath the electron-supply layer and a lower channel layer on the back-barrier layer, and the lower channel layer has a C concentration higher than the upper channel layer and contains Si.

A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO.sub.3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.

The present invention provides a single photon avalanche diode device. The device has a logic substrate comprising an upper surface. The device has a sensor substrate bonded to an upper surface of the logic substrate. In an example, the sensor substrate comprises a plurality of pixel elements spatially disposed to form an array structure. In an example, each of the pixel elements has a passivation material, an epitaxially grown silicon material, an implanted p-type material configured in a first portion of the epitaxially grown material, an implanted n-type material configured in a second portion of the epitaxially grown material, and a junction region configured from the implanted p-type material and the implanted n-type material.

The present invention provides a single photon avalanche diode device. The device has a logic substrate comprising an upper surface. The device has a sensor substrate bonded to an upper surface of the logic substrate. In an example, the sensor substrate comprises a plurality of pixel elements spatially disposed to form an array structure. In an example, each of the pixel elements has a passivation material, an epitaxially grown silicon material, an implanted p-type material configured in a first portion of the epitaxially grown material, an implanted n-type material configured in a second portion of the epitaxially grown material, and a junction region configured from the implanted p-type material and the implanted n-type material.

A substrate for a tool including at least one sidewall includes at least one diamond layer. The diamond layer has a thickness between 10 nanometers and 1000 nanometers and is formed from diamond grains sized to be 50% or less of diamond layer thickness, with the diamond coating being deposited on the surface of the substrate over the at least one sidewall.

A substrate for a tool including at least one sidewall includes at least one diamond layer. The diamond layer has a thickness between 10 nanometers and 1000 nanometers and is formed from diamond grains sized to be 50% or less of diamond layer thickness, with the diamond coating being deposited on the surface of the substrate over the at least one sidewall.

The present disclosure may provide a metal-graphene composite having excellent mechanical properties.

The present disclosure may provide a metal-graphene composite having excellent mechanical properties.

A method for making LNO film, including the steps of identifying a substrate, identifying a deposition target, placing the substrate and deposition target in a deposition environment, evolving target material into the deposition environment, and depositing evolved target material onto the substrate to yield an LNO film. The deposition environment defines a temperature of between 500 degrees Celsius and 750 degrees Celsius and a pressure of about 10.sup.−6 Torr. A seed or buffer layer may be first deposited onto the substrate, wherein the seed layer is about 30 mole percent gold and about 70 LiNbO.sub.3.