In some embodiments, an substrate processing system may include a chamber body, a heater assembly disposed within the chamber body, wherein the heater assembly includes a plurality of resistive heater elements coupled together to form an isothermal heated enclosure, and a process kit disposed within the isothermal heated enclosure and having an inner processing volume that includes a plurality of substrate supports to support substrates when disposed thereon, wherein the process kit includes a first processing gas inlet to provide processing gases to the inner processing volume, a first carrier gas inlet to provide a carrier gas to the inner processing volume, and a first exhaust outlet, and a first gas heater coupled via a first conduit to the first carrier gas inlet to heat the carrier gas prior to flowing into the inner processing volume.

In some embodiments, an substrate processing system may include a chamber body, a heater assembly disposed within the chamber body, wherein the heater assembly includes a plurality of resistive heater elements coupled together to form an isothermal heated enclosure, and a process kit disposed within the isothermal heated enclosure and having an inner processing volume that includes a plurality of substrate supports to support substrates when disposed thereon, wherein the process kit includes a first processing gas inlet to provide processing gases to the inner processing volume, a first carrier gas inlet to provide a carrier gas to the inner processing volume, and a first exhaust outlet, and a first gas heater coupled via a first conduit to the first carrier gas inlet to heat the carrier gas prior to flowing into the inner processing volume.

A method forms one or more diamonds. The method provides a growth chamber having a gas environment. A single crystal diamond substrate is positioned within the growth chamber. Diamond material is deposited on the single crystal diamond substrate for epitaxial growth. The single crystal diamond substrate has a given crystal orientation. Growth is continued at a prescribed temperature, prescribed pressure, and with a prescribed gas content for the gas environment. The prescribed gas environment has a nitrogen concentration of greater than about 0.5 ppm and less than about 5.0 ppm. The prescribed temperature is greater than about 650 degrees C. and less than about 950 degrees C. The prescribed pressure is greater than about 130 Torr and less than about 175 Torr.

A method forms one or more diamonds. The method provides a growth chamber having a gas environment. A single crystal diamond substrate is positioned within the growth chamber. Diamond material is deposited on the single crystal diamond substrate for epitaxial growth. The single crystal diamond substrate has a given crystal orientation. Growth is continued at a prescribed temperature, prescribed pressure, and with a prescribed gas content for the gas environment. The prescribed gas environment has a nitrogen concentration of greater than about 0.5 ppm and less than about 5.0 ppm. The prescribed temperature is greater than about 650 degrees C. and less than about 950 degrees C. The prescribed pressure is greater than about 130 Torr and less than about 175 Torr.

A method forms one or more diamonds. The method provides a growth chamber having a gas environment. A single crystal diamond substrate is positioned within the growth chamber. Diamond material is deposited on the single crystal diamond substrate for epitaxial growth. The single crystal diamond substrate has a given crystal orientation. Growth is continued at a prescribed temperature, prescribed pressure, and with a prescribed gas content for the gas environment. The prescribed gas environment has a nitrogen concentration of greater than about 0.5 ppm and less than about 5.0 ppm. The prescribed temperature is greater than about 650 degrees C. and less than about 950 degrees C. The prescribed pressure is greater than about 130 Torr and less than about 175 Torr.

A method forms one or more diamonds. The method provides a growth chamber having a gas environment. A single crystal diamond substrate is positioned within the growth chamber. Diamond material is deposited on the single crystal diamond substrate for epitaxial growth. The single crystal diamond substrate has a given crystal orientation. Growth is continued at a prescribed temperature, prescribed pressure, and with a prescribed gas content for the gas environment. The prescribed gas environment has a nitrogen concentration of greater than about 0.5 ppm and less than about 5.0 ppm. The prescribed temperature is greater than about 650 degrees C. and less than about 950 degrees C. The prescribed pressure is greater than about 130 Torr and less than about 175 Torr.

A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

Embodiments relate to a layered material (having a substrate, at least a buffer layer, with zero or more growth layers) that has been intercalated via a process that decouples (physically and electronically) the buffer layer from the substrate, thereby resulting in the creation of few-atom thick metal layers that exhibit a range of optical properties, including plasmonic or electronic resonance, that enables superior optical (e.g. Raman) detection of molecules.

A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.